µPA651TT P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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µPA651TT P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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FIELD EFFECT TRANSISTOR
µPA651TT
P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
µPA651TT switching device, which driven directly power source. This device features on-state resistance excellent switching characteristics, suitable applications such power switch portable machine
PACKAGE DRAWING (Unit:
2.0±0.2
0.25±0.1
2.1±0.1
0~0.05
FEATURES
drive available on-state resistance RDS(on)1 MAX. (VGS -4.5 -2.5 RDS(on)2 MAX. (VGS -2.5 -2.5 RDS(on)3 MAX. (VGS -1.8 -1.5
0.65
0.65
MAX.
ORDERING INFORMATION
0.05
PART NUMBER
PACKAGE 6pinWSOF (1620)
0.4±0.1
µPA651TT
0.15 +0.1 -0.05
Marking:
1,2,5,6 Drain Gate Source
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse)
Note2
m8.0 m5.0 +150
Gate Gate Protection Diode Body Diode Drain
+0.1 -0.05
EQUIVALENT CIRCUIT
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Notes Duty Cycle Mounted FR-4 board, sec.
Tstg
Source
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G16203EJ1V0DS00 (1st edition) Date Published 2002 CP(K) Printed Japan
2002
µPA651TT
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) td(off) VF(S-D) -4.0 -5.0 TEST CONDITIONS m8.0 -1.0 -2.5 -4.5 -2.5 -2.5 -2.5 -1.8 -1.5 -2.5 -4.0 MIN. TYP. MAX. UNIT
-0.45
0.94
-1.5
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T.
Wave Form
Duty Cycle
Wave Form
td(on)
td(off) toff
Data Sheet G16203EJ1V0DS
µPA651TT
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Ambient Temperature
Ambient Temperature
-100
FORWARD BIAS SAFE OPERATING AREA
Drain Current
nted
-0.1
-0.01 -0.1
-100
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
1000 Single Pulse Mounted FR-4 board
rth(ch-A) Transient Thermal Resistance °C/W
1000
Pulse Width
Data Sheet G16203EJ1V0DS
µPA651TT
DRAIN CURRENT DRAIN SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
-100
Drain Current
Drain Current
-0.1 -0.01 -0.001 -0.0001
-0.2 -0.4 -0.6 -0.8 -1.2 -1.4 -1.6
-0.5
-1.5
-2.5
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Cut-off Voltage
-0.01
-0.1
Channel Temperature
Drain Current
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT RDS(on) Drain Source On-state Resistance
-0.01
-0.1
-100
-0.01
-0.1
-100
Drain Current
Drain Current
Data Sheet G16203EJ1V0DS
µPA651TT
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
-0.01
-0.1
-100
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
10000
CAPACITANCE DRAIN SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
1000
-0.1
-100
Channel Temperature
Drain Source Voltage
SWITCHING CHARACTERISTICS
10000 1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-5.0
Gate Source Voltage
td(on), td(off), Switching Time
-0.01
-0.1
Drain Current
Gate Charge
Data Sheet G16203EJ1V0DS
µPA651TT
SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Source Drain Voltage
Data Sheet G16203EJ1V0DS
µPA651TT
[MEMO]
Data Sheet G16203EJ1V0DS
µPA651TT
information this document current May, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA651TT P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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