µPA653TT P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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µPA653TT P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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FIELD EFFECT TRANSISTOR
µPA653TT
P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
µPA653TT switching device, which driven directly power source. This device features on-state resistance excellent switching characteristics, suitable applications such power switch portable machine
PACKAGE DRAWING (Unit:
2.0±0.2
0.25±0.1
2.1±0.1
0~0.05
FEATURES
drive available on-state resistance RDS(on)1 MAX. (VGS -1.5 RDS(on)2 MAX. (VGS -4.5 -1.5 RDS(on)3 MAX. (VGS -4.0 -1.5
0.65
0.65
MAX.
ORDERING INFORMATION
0.05
PART NUMBER
PACKAGE 6pinWSOF (1620)
0.4±0.1
µPA653TT
0.15 +0.1 -0.05
Marking:
1,2,5,6 Drain Gate Source
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
m2.5 +150
Gate Gate Protection Diode Body Diode Drain
+0.1 -0.05
EQUIVALENT CIRCUIT
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes Duty Cycle
Note2
Mounted FR-4 board 5000 sec.
Source
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document G16205EJ1V0DS00 (1st edition) Date Published September 2002 CP(K) Printed Japan
2002
µPA653TT
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) td(off) VF(S-D) -2.5 TEST CONDITIONS -1.0 -1.5 -1.5 -4.5 -1.5 -4.0 -1.5 -1.5 MIN. TYP. MAX. UNIT
-1.5
-1.8
0.90
-2.5
TEST CIRCUIT SWITCHING TIME
TEST CIRCUIT GATE CHARGE
D.U.T.
D.U.T.
Wave Form
Duty Cycle
Wave Form
td(on)
td(off) toff
Data Sheet G16205EJ1V0DS
µPA653TT
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted FR-4 board 5000 sec.
Ambient Temperature
Ambient Temperature
FORWARD BIAS SAFE OPERATING AREA
Drain Current
ited ingle ulse unted oard
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH rth(ch-A) Transient Thermal Resistance °C/W
1000
Single Pulse Mounted FR-4 board 5000
1000
Pulse Width
Data Sheet G16205EJ1V0DS
µPA653TT
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Pulsed
FORWARD TRANSFER CHARACTERISTICS
-4.5 -4.0
Drain Current
Drain Current
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Pulsed -25°C 25°C 75°C 125°C
VGS(off) Gate Cut-off Voltage
-1.0
0.01 0.01
Channel Temperature
Drain Current
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
-1.5 Pulsed -4.5 -4.0
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
-1.5 Pulsed
Channel Temperature
Gate Source Voltage
Data Sheet G16205EJ1V0DS
µPA653TT
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
-4.5 125°C 75°C
125°C 75°C
25°C -25°C 0.01
25°C -25°C
0.01
Drain Current
Drain Current
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
125°C 75°C 25°C -25°C
SWITCHING CHARACTERISTICS
1000
td(on), td(off), Switching Time
-4.0
d(off)
d(on)
0.01
Drain Current
Drain Current
CAPACITANCE DRAIN SOURCE VOLTAGE
1000
SOURCE DRAIN DIODE FORWARD VOLTAGE
Ciss, Coss, Crss Capacitance
Diode Forward Current
0.01
Drain Source Voltage
VF(S-D) Source Drain Voltage
Data Sheet G16205EJ1V0DS
µPA653TT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-2.5 -6.0
Gate Source Voltage
Gate Change
Data Sheet G16205EJ1V0DS
µPA653TT
[MEMO]
Data Sheet G16205EJ1V0DS
µPA653TT
information this document current September, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

µPA653TT P-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIP

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