2SK3408 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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2SK3408 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING
DESCRIPTION
2SK3408 switching device which driven directly power source. 2SK3408 features on-state resistance excellent switching characteristics, suitable applications such power switch dynamic clamp relay
PACKAGE DRAWING (Unit:
+0.1 -0.05 0.16+0.1 -0.06
0.65-0.15
+0.1
±0.2
FEATURES
driven power source on-state resistance RDS(on)1 MAX. (VGS 10.0 RDS(on)2 MAX. (VGS RDS(on)3 MAX. (VGS Built-in protection diode against ESD.
0.95
0.95
0.65
±0.2 Gate Source Drain
ORDERING INFORMATION
PART NUMBER 2SK3408 PACKAGE SC-96 Mini Mold (Thin Type)
Marking:
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Drain Gate Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Note1 Drain Current (pulse) Total Power Dissipation 25°C) Note2 Total Power Dissipation 25°C) Channel Temperature Storage Temperature VDSS VDGS VGSS ID(DC) ID(pulse) Tstg ±1.0 ±4.0 0.20 1.25 +150
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Gate Protection Diode
Source
Notes Duty Cycle Mounted copper connected drain electrode 2500 FR-4 board, sec. Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Before using this document, please confirm that this latest version.
products and/or types available every country. Please check with Electronics sales representative availability additional information.
Document D15016EJ4V0DS00 (4th edition) Date Published 2003 CP(K) Printed Japan
mark shows major revised points.
2000
2SK3408
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS 30.4
MIN.
TYP.
MAX.
UNIT
Drain Source On-state Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Note
Ciss Coss Crss td(on) td(off) VF(S-D)
30.4 di/dt
0.81
Note Pulsed: Duty Cycle
TEST CIRCUIT SWITCHING TIME TEST CIRCUIT GATE CHARGE
D.U.T. Duty Cycle
Wave Form
Wave Form
D.U.T.
td(on)
td(off)
toff
Data Sheet D15016EJ4V0DS
2SK3408
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Derating Factor
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Drain Current
ID(DC)
Single pulse Mounted copper connected drain electrode 2500 FR-4 board
0.01
Ambient Temperature
Drain Source Voltage
DRAIN CURRENT DRAIN SOURCE VOLTAGE
0.01 0.001 0.0001
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Current
125°C 75°C 25°C -25°C
0.00001
Drain Source Voltage
Gate Sorce Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Cut-off Voltage
-25°C 25°C 75°C 125°C
0.01 0.01
Channel Temperature
Drain Current
Data Sheet D15016EJ4V0DS
2SK3408
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT 125°C 75°C 25°C -25°C
125°C 75°C 25°C -25°C
0.01
0.01
Drain Current
Drain Current
(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT 125°C 75°C 25°C -25°C
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
0.01
Drain Current
Channel Temperature
(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
Ciss, Coss, Crss Capacitance
CAPACITANCE DRAIN SOURCE VOLTAGE 1000 Ciss Coss Crss
Gate Source Voltage
Drain Source Voltage
Data Sheet D15016EJ4V0DS
2SK3408
SWITCHING CHARACTERISTICS 1000
SOURCE DRAIN DIODE FORWARD VOLTAGE
Source Drain Current
td(on), td(off), Swwitchig Time
td(off) td(on)
Drain Current
0.01
Pulsed
VF(S-D) Diode Forward Voltage
DYNAMIC INPUT CHARACTERISTICS
Gate Source Voltage
Gate Charge
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000 Single pulse Without board
rth(ch-A) Transient Thermal Resistance °C/W
Mounted copper connected drain electrode 2500 FR-4 board
0.001
0.01
Pulse Width
1000
Data Sheet D15016EJ4V0DS
2SK3408
DYNAMIC CLAMP APPLICATION
Relay
Load Microcomputer
Remarks Input resistance necessary gate terminal. (range: recommend: Pull down resistance necessary between gate source. (several:
Data Sheet D15016EJ4V0DS
2SK3408
information this document current May, 2003. information subject change without notice. actual design-in, refer latest publications Electronics data sheets data books, etc., most up-to-date specifications Electronics products. products and/or types available every country. Please check with Electronics sales representative availability additional information. part this document copied reproduced form means without prior written consent Electronics. Electronics assumes responsibility errors that appear this document. Electronics does assume liability infringement patents, copyrights other intellectual property rights third parties arising from Electronics products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights Electronics others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. Electronics assumes responsibility losses incurred customers third parties arising from these circuits, software information. While Electronics endeavors enhance quality, reliability safety Electronics products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects Electronics products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment anti-failure features. Electronics products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only Electronics products developed based customerdesignated "quality assurance program" specific application. recommended applications Electronics product depend quality grade, indicated below. Customers must check quality grade each Electronics product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade Electronics products "Standard" unless otherwise expressly specified Electronics data sheets data books, etc. customers wish Electronics products applications intended Electronics, they must contact Electronics sales representative advance determine Electronics' willingness support given application. (Note) "NEC Electronics" used this statement means Electronics Corporation also includes majority-owned subsidiaries. "NEC Electronics products" means product developed manufactured Electronics defined above).
11-1

2SK3408 N-CHANNEL FIELD EFFECT TRANSISTOR SWITCHING DESCRIPT

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