2SK3325 DESCRIPTION 2SK3325 N-Channel DMOS device that featu

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2SK3325 DESCRIPTION 2SK3325 N-Channel DMOS device that featu

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FIELD EFFECT TRANSISTOR
2SK3325
DESCRIPTION
2SK3325 N-Channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
ORDERING INFORMATION
PART NUMBER 2SK3325 2SK3325-S 2SK3325-ZJ PACKAGE TO-220AB TO-262 TO-263
FEATURES
gate charge: TYP. (VDD Gate voltage rating: on-state resistance RDS(on) 0.85 MAX. (VGS Avalanche capability ratings TO-220AB, TO-262, TO-263 package (TO-220AB)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) Tstg
+150 10.7
(TO-262)
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
(TO-263)
Notes Duty Cycle Starting
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14264EJ1V0DS00 (1st edition) Date Published 2000 CP(K) Printed Japan
1999, 2000
2SK3325
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Leakage Current Gate Source Leakage Current Gate Source Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt VGS(on) TEST CONDITIONS 0.68 1200 0.85 MIN. TYP. MAX. ±100 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14264EJ1V0DS00
2SK3325
TYPICAL CHARACTERISTICS(TA
Figure1. DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
Figure2. TOTAL POWER DISSIPATION CASE TEMPERATURE
Total Power Dissipation
Case Temperature
Figure3. FORWARD BIAS SAFE OPERATING AREA
Case Temperature
Figure4. DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
(pulse)
Drain Current
(DC)
Drain Current
Single Pulse 1000
Drain Source Voltage
Figure5. DRAIN CURRENT GATE SOURCE VOLTAGE Pulsed
Drain Source Voltage
Drain Current
0.01
0.001 0.0001 Gate Source Voltage
Data Sheet D14264EJ1V0DS00
2SK3325
Figure6. TRANSIENT THERMAL RESISTANCE PULSE WIDTH
Transient Thermal Resistance °C/W
Rth(ch-A) 83.0 °C/W
Rth(ch-C) 1.47 °C/W
Single Pulse 0.01 0.0001 0.001 0.01 1000
Pulse Width
Figure7. FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Figure8. DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
IyfsI Forward Transfer Admittance
RDS(on) Drain Source On-state Resistance
0.01 0.01
Pulsed Drain Current
Pulsed Gate Source Voltage
RDS(on) Drain Source On-state Resistance
Figure9. DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cut-off Voltage
Figure10. GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
Drain Current
Channel Temperature
Data Sheet D14264EJ1V0DS00
2SK3325
RDS(on) Drain Source On-state Resistance
Figure11. DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Figure12. SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Pulsed
Channel Temperature
0.01
Source Drain Voltage
Figure14. SWITCHING CHARACTERISTICS 1000
Figure13. CAPACITANCE DRAIN SOURCE VOLTAGE
td(on), td(off), Switching Time
10000
Ciss, Coss, Crss Capacitance
Ciss 1000 Coss
td(on) td(off) Drain Current
Crss
1000 Drain Source Voltage
Figure15. REVERSE RECOVERY TIME DRAIN CURRENT 1000
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
Reverse Recovery Time
di/dt A/µs
Drain Current
Gate Charge
Data Sheet D14264EJ1V0DS00
Gate Source Voltage
2SK3325
Figure17. SINGLE AVALANCHE ENERGY STARTING CHANNEL TEMPERATURE ID(peak) 10.7 Starting Starting Channel Temperature
Figure18. SINGLE AVALANCHE ENERGY INDUCTIVE LOAD
Single Avalanche Energy
Single Avalanche Energy
Starting
Inductive Load
Data Sheet D14264EJ1V0DS00
2SK3325
PACKAGE DRAWINGS (Unit
1)TO-220AB (MP-25)
3.0±0.3 10.6 MAX. 10.0 MIN. 15.5 MAX. MAX.
2)TO-262 (MP-25 Cut)
1.0±0.5
3.6±0.2
MAX. 1.3±0.2
1.3±0.2
(10)
MAX.
1.3±0.2
1.3±0.2
12.7 MIN.
12.7 MIN.
8.5±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
3)TO-263 (MP-25ZJ)
(10) 1.0±0.5 8.5±0.2 MAX. 1.3±0.2
EQUIVALENT CIRCUIT
Drain
5.7±0.4
1.4±0.2 0.7±0.2 2.54 TYP.
2.54 TYP.
0.5±0.2
Gate
Body Diode
Remark
Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Source
Data Sheet D14264EJ1V0DS00
2SK3325
information this document current May, 2000. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

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