2SK3304 DESCRIPTION 2SK3304 N-Channel device that features g

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2SK3304 DESCRIPTION 2SK3304 N-Channel device that features g

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FIELD EFFECT TRANSISTOR
2SK3304
DESCRIPTION
2SK3304 N-Channel device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply.
ORDERING INFORMATION
PART NUMBER 2SK3304 PACKAGE TO-3P
FEATURES
gate charge TYP. (VDD Gate voltage rating on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings (TO-3P)
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) Tstg
Note2 Note2
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Storage Temperature Single Avalanche Current Single Avalanche Energy
Notes Duty cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D13992EJ1V0DS00 (1st edition) Date Published June 2000 CP(K) Printed Japan
2000
2SK3304
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Leakage Current Gate Source Leakage Current Gate Source Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt A/µs 1300 13.5 MIN. TYP. MAX. ±100 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D13992EJ1V0DS00
2SK3304
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current
ID(DC) Lim10
Drain Current
25°C Single Pulse
Pulsed 1000 Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS
Drain Current
125°C 75°C 25°C -25°C
0.01
Pulsed Gate Source Voltage
Data Sheet D13992EJ1V0DS00
2SK3304
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A)= 41.7
Rth(ch-C)= 0.96
0.01 0.001 0.0001 25°C Single Pulse 0.001 0.01 1000
Pulse Width
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Forward Transfer Admittance
-25°C 25°C 75°C 125°C
RDS(on) Drain Source On-state Resistance
Pulsed
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cut-off Voltage
Pulsed
0.01
Drain Current
Channel Temperature
Data Sheet D13992EJ1V0DS00
2SK3304
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
Ciss, Coss, Crss Capacitance
1000
Ciss
td(on), td(off), Switching Time
td(off)
Coss Crss 1000 Drain Source Voltage
td(on)
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 10000
Drain Source Voltage
1000
di/dt
Drain Current
Gate Charge
Gate Source Voltage
Reverse Recovery Time
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Data Sheet D13992EJ1V0DS00
2SK3304
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY STARTING CHANNEL TEMPERATURE
Single Avalanche Energy
Single Avalanche Current
ID(peak)
Starting 25°C 0.001 0.01
0.0001
Inductive Load
Starting Starting Channel Temperature
Data Sheet D13992EJ1V0DS00
2SK3304
PACKAGE DRAWING (Unit
TO-3P (MP-88) EQUIVALENT CIRCUIT
Drain
MAX.
TYP. 4.5±0.2
3.2±0.2 15.7 MAX.
TYP.
20.5 MAX. TYP.
18.7±0.4
TYP.
Gate
Body Diode
Source
MIN.
MAX.
2.2±0.2
1.0±0.2
0.6±0.1
2.8±0.1
5.45 TYP.
5.45 TYP.
Gate Drain Source (Drain)
Remark Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
Data Sheet D13992EJ1V0DS00
2SK3304
information this document current June, 2000. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3304 DESCRIPTION 2SK3304 N-Channel device that features g

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