2SK3457 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3457 N

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2SK3457 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3457 N

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FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK3457 N-channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply.
ORDERING INFORMATION
PART NUMBER 2SK3457 PACKAGE Isolated TO-220
FEATURES
gate charge TYP. (VDD Gate voltage rating on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
±5.0 +150 73.8
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty Cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14754EJ1V0DS00 (1st edition) Date Published June 2002 CP(K) Printed Japan
2000
2SK3457
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt TEST CONDITIONS 1220 1310 MIN. TYP. MAX. ±100 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
Wave Form
BVDSS
Duty Cycle
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14754EJ1V0DS
2SK3457
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature FORWARD BIAS SAFE OPERATING AREA
ID(pulse) ID(DC)
Case Temperature
Drain Current
ited
Power Dissipation Limited
25°C Single Pulse Drain Source Voltage 1000
0.01
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5°C/W
Rth(ch-C) 2.5°C/W
0.01
Single Pulse
1000
Pulse Width
Data Sheet D14754EJ1V0DS
2SK3457
DRAIN CURRENT DRAIN SOURCE VOLTAGE
1000 Pulsed
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Current
-50°C -25°C 25°C 75°C 125°C 150°C
0.01
0.001
Drain Source Voltage GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Gate Source Voltage FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Cut-off Voltage
Channel Temperature DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Forward Transfer Admittance
-50°C -25°C 25°C 75°C 125°C 150°C
Drain Current DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
Gate Source Voltage
Drain Current
Data Sheet D14754EJ1V0DS
2SK3457
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE RDS(on) Drain Source On-state Resistance
CAPACITANCE DRAIN SOURCE VOLTAGE
10000
Ciss, Coss, Crss Capacitance
Ciss 1000
Coss
1000 Crss
Channel Temperature
Drain Source Voltage
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
Drain Source Voltage td(on), td(off), Switching Time
Drain Current Gate Charge
Gate Source Voltage
td(off)
td(on)
SOURCE DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME DRAIN CURRENT
10000
Reverse Recovery Time Diode Forward Current
1000
di/dt
0.01
Source Drain Voltage
Drain Current
Data Sheet D14754EJ1V0DS
2SK3457
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current Energy Derating Factor
73.8
Starting 25°C
Starting 25°C
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14754EJ1V0DS
2SK3457
PACKAGE DRAWING (Unit:
Isolated TO-220 (MP-45F)
10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2
15.0±0.3
3±0.1
12.0±0.2
EQUIVALENT CIRCUIT
Drain
4±0.2
13.5 MIN.
Gate
Body Diode
0.7±0.1 2.54 TYP.
1.3±0.2 1.5±0.2 2.54 TYP.
2.5±0.1 0.65±0.1
Source
Gate Drain Source
Remark Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
Data Sheet D14754EJ1V0DS
2SK3457
information this document current June, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3457 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3457 N

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