2SK3305 ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2

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2SK3305 ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2

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FIELD EFFECT TRANSISTOR
2SK3305
ORDERING INFORMATION
PART NUMBER 2SK3305 2SK3305-S 2SK3305-ZJ PACKAGE TO-220AB TO-262 TO-263
DESCRIPTION
2SK3305 N-Channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
FEATURES
gate charge: TYP. (VDD Gate voltage rating: on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings (TO-220AB)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) Tstg
+150
(TO-263) (TO-262)
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty Cycle Starting
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14003EJ1V0DS00 (1st edition) Date Published March 2000 CP(K) Printed Japan
1998,2000
2SK3305
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Leakage Current Gate Source Leakage Current Gate Source Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt VGS(on) TEST CONDITIONS MIN. TYP. MAX. ±100 UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
BVDSS
Duty Cycle
Wave Form
td(on) td(off) toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14003EJ1V0DS00
2SK3305
TYPICAL CHARACTERISTICS 25°C)
Figure1. DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
Figure2. TOTAL POWER DISSIPATION CASE TEMPERATURE
Total Power Dissipation
Case Temperature
Figure3. FORWARD BIAS SAFE OPERATING AREA (pulse)
Case Temperature
Figure4. DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
Drain Current
(DC)
Single Pulse
1000
Drain Source Voltage
Figure5. DRAIN CURRENT GATE SOURCE VOLTAGE 1000 Pulsed
Drain Source Voltage
Drain Current
0.01
0.001 Gate Source Voltage
Data Sheet D14003EJ1V0DS00
2SK3305
Figure6. TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5 °C/W
Rth(ch-C) 1.67 °C/W
Single Pulse 0.01 0.0001 0.001 0.01 1000
Pulse Width
Figure7. FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Figure8. DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
IyfsI Forward Transfer Admittance
RDS(on) Drain Source On-state Resistance
0.01 0.01
Pulsed Drain Current
Pulsed Gate Source Voltage
RDS(on) Drain Source On-state Resistance
Figure9. DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cut-off Voltage
Figure10. GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
Drain Current
Channel Temperature
Data Sheet D14003EJ1V0DS00
2SK3305
RDS(on) Drain Source On-state Resistance
Figure11. DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Figure12. SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Pulsed
0.01
Channel Temperature
Source Drain Voltage
Figure14. SWITCHING CHARACTERISTICS
Figure13. CAPACITANCE DRAIN SOURCE VOLTAGE Ciss Coss
td(on), td(off), Switching Time
10000
Ciss, Coss, Crss Capacitance
td(off) td(on)
1000
Crss
Drain Current
1000 Drain Source Voltage
Figure15. REVERSE RECOVERY TIME DRAIN CURRENT 2000 1800
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Drain Source Voltage
Reverse Recovery Time
di/dt A/µs
1600 1400 1200 1000 Drain Current
Gate Charge
Data Sheet D14003EJ1V0DS00
Gate Source Voltage
2SK3305
Figure17. SINGLE AVALANCHE ENERGY STARTING CHANNEL TEMPERATURE ID(peak)
Figure18. SINGLE AVALANCHE CURRENT INDUCTIVE LOAD Single Avalanche Current Starting
Single Avalanche Energy
Starting Starting Channel Temperature
Inductive Load
Data Sheet D14003EJ1V0DS00
2SK3305
PACKAGE DRAWINGS (Unit:
TO-220AB (MP-25) TO-262 (MP-25 Cut)
3.0±0.3
10.6 MAX. 10.0
MAX.
1.0±0.5
3.6±0.2
MIN.
1.3±0.2 (10)
MAX. 1.3±0.2
15.5 MAX.
MAX.
12.7 MIN.
1.3±0.2
1.3±0.2
12.7 MIN.
8.5±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
TO-263 (MP-25ZJ)
(10.0)
MAX. 1.3±0.2
EQUIVALENT CIRCUIT
Drain
1.0±0.5
8.5±0.2
5.7±0.4
1.4±0.2 0.7±0.2 2.54 TYP.
Gate
0.5±0.2
Body Diode
2.54 TYP.
Remark
Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Source
Data Sheet D14003EJ1V0DS00
2SK3305
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

2SK3305 ORDERING INFORMATION PART NUMBER 2SK3305 2SK3305-S 2

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