2SK3306 ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Iso

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2SK3306 ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Iso

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FIELD EFFECT TRANSISTOR
2SK3306
ORDERING INFORMATION
PART NUMBER 2SK3306 PACKAGE Isolated TO-220 (MP-45F)
DESCRIPTION
2SK3306 N-Channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
FEATURES
gate charge TYP. (VDD Gate voltage rating on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings Isolated TO-220(MP-45F) package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) Tstg
+150
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty Cycle Starting
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14004EJ2V0DS00 (2nd edition) Date Published January 2000 CP(K) Printed Japan
mark shows major revised points.
1999
2SK3306
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Leakage Current SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) 1.35 MIN. TYP. MAX. ±100 UNIT TEST CONDITIONS
Gate Source Leakage Current Gate Source Cut-off Voltage
Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
VGS(on)
Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time
VGS(on)
di/dt
Reverse Recovery Charge
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14004EJ2V0DS00
2SK3306
TYPICAL CHARACTERISTICS(TA
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power Total Power Dissipation
TOTAL POWER DISSIPATION CASE TEMPERATURE
Case Temperature
Case Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA
Drain Current
Drain Current
(pulse)
(DC)
Single Pulse
1000
Drain Source Voltage DRAIN CURRENT GATE SOURCE VOLTAGE 1000
Drain Current
Drain Source Voltage
Pulsed
0.01
0.001 Gate Source Voltage
Data Sheet D14004EJ2V0DS00
2SK3306
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(ch-C) Transient Thermal Resistance °C/W
Rth(ch-A) 62.5 °C/W
Rth(ch-C) 3.57 °C/W
Single Pulse 0.01 0.0001 0.001 0.01 1000
Pulse Width
IyfsI Forward Transfer Admittance
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE
0.01 0.01
Pulsed Drain Current
Pulsed Gate Source Voltage
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cut-off Voltage
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
Drain Current
Channel Temperature
Data Sheet D14004EJ2V0DS00
2SK3306
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
0.01
Channel Temperature CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Source Drain Voltage
SWITCHING CHARACTERISTICS
Ciss Coss
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off) td(on)
Crss
Drain Current
1000 Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT 2000 1800 di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1600 1400 1200 1000
Drain Source Voltage
Reverse Recovery Time
Drain Current
Gate Charge
Data Sheet D14004EJ2V0DS00
Gate Source Voltage
2SK3306
SINGLE AVALANCHE ENERGY STARTING CHANNEL TEMPERATURE ID(peak) SINGLE AVALANCHE CURRENT INDUCTIVE LOAD Starting
Single Avalanche Energy
Single Avalanche Current
1.00E-04
1.00E-03
1.00E-02
1.00E-01
Starting Starting Channel Temperature
Inductive Load
Data Sheet D14004EJ2V0DS00
2SK3306
PACKAGE DRAWING (Unit:
Isolated TO-220(MP-45F)
10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2
EQUIVALENT CIRCUIT
Drain
15.0±0.3
3±0.1
12.0±0.2
Gate
Body Diode
4±0.2
13.5 MIN.
Source
0.7±0.1 2.54
1.3±0.2 1.5±0.2 2.54
2.5±0.1 0.65±0.1
Gate Drain Source
Remark
Strong electric field, when exposed this device, cause destruction gate oxide ultimately degrade device operation. Steps must taken stop generation static electricity much possible, quickly dissipate once, when occurred.
Data Sheet D14004EJ2V0DS00
2SK3306
information this document subject change without notice. Before using this document, please confirm that this latest version. part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. Descriptions circuits, software, other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software, information design customer's equipment shall done under full responsibility customer. Corporation assumes responsibility losses incurred customer third parties arising from these circuits, software, information. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance.

2SK3306 ORDERING INFORMATION PART NUMBER 2SK3306 PACKAGE Iso

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