2SK3221 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3221 N

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

2SK3221 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3221 N

Datasheet Thumbnail

Top Searches for this datasheet

FIELD EFFECT TRANSISTOR
2SK3221
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK3221 N-channel DMOS device that features gate charge excellent switching characteristics, designed high voltage applications such switching power supply, adapter.
ORDERING INFORMATION
PART NUMBER 2SK3211 PACKAGE Isolated TO-220
FEATURES
gate charge TYP. (VDD Gate voltage rating on-state resistance RDS(on) MAX. (VGS Avalanche capability ratings Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
±2.0 ±8.0 +150
V/ns
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Diode Recovery dv/dt
Note2 Note2
dv/dt
Note3
Notes Duty Cycle Starting 25°C, Vclamp di/dt 25°C
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D13789EJ1V0DS00 (1st edition) Date Published June 2002 CP(K) Printed Japan
1998
2SK3221
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt TEST CONDITIONS MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D13789EJ1V0DS
2SK3221
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Case Temperature FORWARD BIAS SAFE OPERATING AREA
Case Temperature
Drain Current
ID(Pulse) ID(DC)
RDS(on) Limited (VGS Power Dissipation Limited 10ms 1000
25°C Single Pulse 0.01
Drain Source Voltage TRANSIENT THERMAL RESISTANCE PULSE WIDTH
Transient Thermal Resistance °C/W
Rth(j-A) 62.5°C/W
Rth(j-C) 5.0°C/W
Single Pulse
1000 Pulse Width
Data Sheet D13789EJ1V0DS
2SK3221
DRAIN CURRENT DRAIN SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
Pulsed
Drain Current
Drain Current
125°C 75°C
25°C -25°C
Pulsed
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
VGS(off) Gate Cut-off Voltage
Pulsed
-25°C 25°C 75°C 125°C
0.01
Channel Temperature
Drain Current
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE RDS(on) Drain Source On-state Resistance RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Pulsed
Pulsed
Drain Current
Gate Source Voltage
Data Sheet D13789EJ1V0DS
2SK3221
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE RDS(on) Drain Source On-state Resistance SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Pulsed
Channel Temperature
VF(S-D) Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10000
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off) td(on)
Drain Current
1000 Ciss Coss Crss
Drain Source Voltage
REVERSE RECOVERY TIME DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10000
Reverse Recovery Time
Drain Source Voltage
di/dt
Gate Source Voltage
1000
Diode Forward Current
Gate Charge
Data Sheet D13789EJ1V0DS
2SK3221
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current Energy Derating Factor
Starting 25°C
Inductive Load
Starting Starting Channel Temperature
Data Sheet D13789EJ1V0DS
2SK3221
PACKAGE DRAWING (Unit:
Isolated TO-220 (MP-45F)
10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2
15.0±0.3
3±0.1
12.0±0.2
EQUIVALENT CIRCUIT
Drain
4±0.2
13.5 MIN.
Gate
Body Diode
0.7±0.1 2.54 TYP.
1.3±0.2 1.5±0.2 2.54 TYP.
2.5±0.1 0.65±0.1
Gate Protection Diode
Source
Gate Drain Source
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Data Sheet D13789EJ1V0DS
2SK3221
information this document current June, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3221 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3221 N

Top Searches for this datasheet

Other recent searches