2SK3294 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3294 N

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2SK3294 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3294 N

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FIELD EFFECT TRANSISTOR
2SK3294
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK3294 N-channel device that features on-state resistance excellent switching characteristics, designed high voltage applications such DC/DC converter, actuator driver.
ORDERING INFORMATION
PART NUMBER 2SK3294 2SK3294-S 2SK3294-ZJ PACKAGE TO-220AB TO-262 TO-263(MP-25ZJ)
FEATURES
Gate voltage rating on-state resistance RDS(on) MAX. (VGS input capacitance Ciss 1500 TYP. (VDS Avalanche capability rated Built-in gate protection diode Surface mount device available (TO-220AB)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (Pulse)
Note1
(TO-262) +150 (TO-263)
VDSS VGSS ID(DC) ID(pulse) Tstg
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty Cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14061EJ1V0DS00 (1st edition) Date Published August 2001 Printed Japan
1999,2001
2SK3294
ELECTRICAL CHARACTERISTICS 25°C)
Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) RDS(on) Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs Test Conditions 1500 MIN. TYP. MAX. Unit
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14061EJ1V0DS
2SK3294
TYPICAL CHARACTERISTICS 25°C)
DRAIN CURRENT DRAIN SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
Drain Current
Drain Current
Pulsed
125°C 75°C 25°C -25°C
0.01 0.001 Pulsed
Drain Source Voltage
Gate Source Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
|yfs| Forward Transfer Admittance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT -25°C 25°C 75°C 125°C Pulsed
VGS(off) Gate Cut-off Voltage
Channel Temperature
0.01 0.01
Drain Current
RDS(on) Drain Source On-state Resistance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT Pulsed
Gate Source Voltage
Drain Current
Data Sheet D14061EJ1V0DS
2SK3294
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
(on) Drain Source On-state Resistance
SOURCE DRAIN DIODE FORWARD VOLTAGE
Diode Forward Current
Pulsed
0.01
Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE
SWITCHING CHARACTERISTICS 1000
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
10000
Ciss 1000
td(off)
td(on)
Coss Crss
1000
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Time
Drain Source Voltage
di/dt Drain Current
Gate Charge
Data Sheet D14061EJ1V0DS
Gate Source Voltage
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
2SK3294
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA
ID(DC) ID(pulse)
Drain Current
25°C Single Pulse 1000
Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH Rth(ch-A) 83.3°C/W
rth(t) Transient Thermal Resistance °C/W
Rth(ch-C) 1.25°C/W
0.01
Single Pulse 1000
Pulse Width
Data Sheet D14061EJ1V0DS
2SK3294
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
0.01
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14061EJ1V0DS
2SK3294
PACKAGE DRAWINGS (Unit:
1)TO-220AB (MP-25)
3.0±0.3
10.6 MAX. 10.0 TYP. MAX.
2)TO-262
1.0±0.5
3.6±0.2
MIN.
MAX. 1.3±0.2
1.3±0.2
TYP.
15.5 MAX.
1.3±0.2
MAX.
1.3±0.2
12.7 MIN.
12.7 MIN.
8.5±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
3)TO-263 (MP-25ZJ)
TYP.
1.0±0.5 8.5±0.2
EQUIVALENT CIRCUIT
MAX. 1.3±0.2
Drain
Gate
Body Diode
1.4±0.2 0.7±0.2 2.54 TYP.
5.7±0.4
2.54 TYP.
Gate Protection Diode
Source
0.5±0.2
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D14061EJ1V0DS
2SK3294
information this document current August, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3294 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3294 N

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