2SK3435 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3435 N

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2SK3435 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3435 N

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FIELD EFFECT TRANSISTOR
2SK3435
SWITCHING N-CHANNEL POWER
DESCRIPTION
2SK3435 N-channel Field Effect Transistor designed high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3435 2SK3435-S PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note
FEATURES
Super on-state resistance RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Ciss: Ciss 3200 TYP. Built-in gate protection diode
2SK3435-ZJ 2SK3435-Z
Note TO-220SMD package produced only Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) Tstg
±160 +150
(TO-262)
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
Notes Duty cycle Starting 25°C, (TO-220SMD)
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14604EJ3V0DS00 (3rd edition) Date Published July 2002 CP(K) Printed Japan
mark shows major revised points.
1999, 2001
2SK3435
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs TEST CONDITIONS 3200 1200 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14604EJ3V0DS
2SK3435
TYPICAL CHARACTERISTICS 25°C
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse) ID(DC) issipa
Drain Current
25°C Single Pulse Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 83.3°C/W
Rth(ch-C) 1.49°C/W
0.01
Single Pulse 1000
Pulse Width
Data Sheet D14604EJ3V0DS
2SK3435
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current
-40°C 25°C 75°C 150°C
Drain Current
Pulsed
Gate Source Voltage
Drain Source Voltage
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Pulsed
150°C 75°C 25°C -40°C
0.01 0.01
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
Pulsed
VGS(off) Gate Source Threshold Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE THRESHOLD VOLTAGE CHANNEL TEMPERATURE
1000
Drain Current
Channel Temperature
Data Sheet D14604EJ3V0DS
2SK3435
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
Diode Forward Current
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 10000
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
Ciss
1000 Coss
1000
td(off) td(on)
Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Reverse Recovery Time
Drain Source Voltage
Drain Current
Gate Charge
Data Sheet D14604EJ3V0DS
Gate Source Voltage
di/dt A/µs
2SK3435
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD
Single Avalanche Current
SINGLE AVALANCHE ENERGY DERATING FACTOR
Energy Derating Factor
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14604EJ3V0DS
2SK3435
PACKAGE DRAWINGS (Unit: TO-220AB (MP-25)
MAX.
TO-262 (MP-25 Cut)
3.0±0.3
1.0±0.5
10.6 MAX. 10.0 TYP.
3.6±0.2
MIN.
MAX. 1.3±0.2
1.3±0.2
TYP.
15.5 MAX.
MAX.
1.3±0.2
1.3±0.2
12.7 MIN.
12.7 MIN.
8.5±0.2
0.75±0.1 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
0.75±0.3 2.54 TYP.
0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.2
TO-263 (MP-25ZJ)
TO-220SMD (MP-25Z)
Note
TYP.
MAX. 1.3±0.2
TYP.
MAX. 1.3±0.2
1.0±0.5
1.0±0.5
8.5±0.2
1.1±0.4
3.0±0.5
1.4±0.2 0.7±0.2 2.54 TYP.
8.5±0.2
5.7±0.4
1.4±0.2
2.54 TYP.
0.5±0.2
0.75±0.3 2.54 TYP.
2.54 TYP.
0.5±0.2
2.8±0.2
Note This package produced only Japan.
EQUIVALENT CIRCUIT
Remark
Drain
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage
Gate
Body Diode
exceeding rated voltage applied this device.
Gate Protection Diode
Source
2.8±0.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D14604EJ3V0DS
2SK3435
information this document current July, 2002. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3435 SWITCHING N-CHANNEL POWER DESCRIPTION 2SK3435 N

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