2SK3356 DESCRIPTION 2SK3356 N-channel Field Effect Transisto

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2SK3356 DESCRIPTION 2SK3356 N-channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
2SK3356
DESCRIPTION
2SK3356 N-channel Field Effect Transistor designed high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3356 PACKAGE TO-3P
FEATURES
Super on-state resistance: RDS(on)1 MAX. (VGS RDS(on)2 MAX. (VGS Ciss: Ciss 6300 TYP. Built-in gate protection diode (TO-3P)
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) Tstg
Note2
±300 +150
Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2
Notes Duty cycle Starting 25°C,
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14133EJ3V0DS00 (3rd edition) Date Published March 2001 CP(K) Printed Japan
mark shows major revised points.
1999, 2000
2SK3356
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain Source On-state Resistance SYMBOL IDSS IGSS VGS(off) RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) td(off) VF(S-D) di/dt VGS(on) TEST CONDITIONS 6300 1000 1000 MIN. TYP. MAX. UNIT
TEST CIRCUIT AVALANCHE CAPABILITY
D.U.T. BVDSS
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
VGS(on)
Wave Form
Duty Cycle
td(on)
td(off)
toff
Starting
TEST CIRCUIT GATE CHARGE
D.U.T.
Data Sheet D14133EJ3V0DS
2SK3356
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION CASE TEMPERATURE
Percentage Rated Power
Total Power Dissipation
Channel Temperature
Case Temperature
1000
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Drain Current
ID(DC)
25°C Single Pulse Drain Source Voltage
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) 41.7 °C/W
Rth(ch-C) 0.93 °C/W
0.01
Single Pulse 1000
Pulse Width
Data Sheet D14133EJ3V0DS
2SK3356
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
DRAIN CURRENT DRAIN SOURCE VOLTAGE
Drain Current Drain Current
Pulsed
-50°C 25°C 75°C 150°C
Gate Source Voltage
Drain Source Voltage
Forward Transfer Admittance
Pulsed
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
150°C 75°C 25°C -50°C
Drain Current
Gate Source Voltage
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Cut-off Voltage
GATE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
1000
Drain Current
Channel Temperature
Data Sheet D14133EJ3V0DS
2SK3356
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE Pulsed
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 100000
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS 10000
1000
10000
Ciss
td(off) td(on)
1000 Coss Crss
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time Drain Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
Gate Source Voltage
Drain Current
Gate Charge
Data Sheet D14133EJ3V0DS
2SK3356
SINGLE AVALANCHE CURRENT INDUCTIVE LOAD 1000
SINGLE AVALANCHE ENERGY DERATING FACTOR
Single Avalanche Current
Energy Derating Factor
Inductive Load
Starting Starting Channel Temperature
Data Sheet D14133EJ3V0DS
2SK3356
PACKAGE DRAWING (Unit:
TO-3P (MP-88)
15.7 MAX.
3.2±0.2
MAX.
EQUIVALENT CIRCUIT
Drain
20.0±0.2
4.5±0.2
Gate
Body Diode
MIN. 3.0±0.2
Gate Protection Diode
Source
2.2±0.2 5.45
1.0±0.2 0.6±0.1 5.45 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.8±0.1
Remark diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Data Sheet D14133EJ3V0DS
2SK3356
information this document current March, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3356 DESCRIPTION 2SK3356 N-channel Field Effect Transisto

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