Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data MJ13

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data MJ13

Datasheet Thumbnail

Top Searches for this datasheet

Inductive Fall Time 25_C (Typ) Inductive Storage Time 25_C (Typ) Operating Temperature Range 200_C Switching Regulators Inverters Solenoid Relay Drivers Motor Controls Deflection Circuits Fast Turn Times 100_C Performance Specified for:
Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data MJ13333 transistor designed high voltage, high-speed, power switching inductive circuits where fall time critical. particularly suited line operated switchmode applications such
Designer's SWITCHMODE trademarks Motorola, Inc.
Designer's Data "Worst Case" Conditions Designer's Data Sheet permits design most circuits entirely from information presented. Limit curves representing boundaries device characteristics given facilitate "worst case" design.
SWITCHMODE Series Silicon Power Transistor
Designer's
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature Soldering Purposes from Case Seconds Thermal Resistance, Junction Case Operating Storage Junction Temperature Range Total Power Dissipation 25_C 100_C Derate above 25_C Base Current Continuous Peak Collector Current Continuous Peak Emitter Base Voltage Collector-Emitter voltage Collector-Emitter Voltage
Reversed Biased with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents
Data Sheet
Characteristic
Rating
Symbol
Symbol
Tstg
VCEO
VCEV
AMPERE SILICON POWER TRANSISTORS 400-500 VOLTS WATTS
MJ13333
Value
Order this document MJ13333/D
CASE 1-07 TO-204AA (TO-3)
Watts
W/_C
_C/W
Unit
Unit
MJ13333
Pulse Test: Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS 25_C unless otherwise noted)
Fall Time
Crossover Time
Storage Time
Crossover Time
Storage Time
Inductive Load, Clamped (Table
Fall Time
Storage Time
Rise Time
Delay Time
Resistive Load (Table
Output Capacitance (VCB Vdc, ftest kHz)
Base Emitter Saturation Voltage Adc, Adc) Adc, Adc, 100_C)
Collector-Emitter Saturation Voltage Adc, Adc) Adc, Adc) Adc, Adc, 100_C)
Current Gain Adc, Vdc)
Clamped Inductive with Base Reverse Biased
Second Breakdown Collector Current with base forward biased
Emitter Cutoff Current (VEB Vdc,
Collector Cutoff Current (VCE Rated VCEV, 100_C)
Collector Cutoff Current (VCEV Rated Value, VBE(off) Vdc) (VCEV Rated Value, VBE(off) Vdc, 150_C)
Collector-Emitter Sustaining Voltage (Table
A(pk), Vclamp Vdc, VBE(off) Vdc, 25_C) A(pk), Vclamp Vdc, VBE(off) Vdc, 100°C) (VCC Vdc, VBE(off) Vdc, 2.0%) Duty Cycle Characteristic
VCEO(sus)
VCE(sat)
VBE(sat)
Symbol
RBSOA
IEBO
ICER
ICEV
IS/b
Motorola Bipolar Power Transistor Device Data
0.02 Figure Figure 0.25 mAdc mAdc mAdc Unit
MJ13333
COLLECTOR-EMITTER VOLTAGE (VOLTS) 150°C hFE, CURRENT GAIN
25°C
COLLECTOR CURRENT (AMPS)
0.01
0.02
0.05
BASE CURRENT (AMP)
Figure Current Gain
VBE(sat) BASE-EMITTER SATURATION VOLTAGE (VOLTS)
Figure Collector Saturation Region
COLLECTOR-EMITTER VOLTAGE (VOLTS)
IC/IB
IC/IB
25°C 150°C
25°C 150°C COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Collector-Emitter Saturation Region
Figure Base-Emitter Voltage
COLLECTOR CURRENT 150°C 125°C 100°C 75°C REVERSE 25°C 10-1 FORWARD CAPACITANCE (pF)
3000 2000 1000
VBE, BASE-EMITTER VOLTAGE (VOLTS)
REVERSE VOLTAGE (VOLTS)
1000
Figure Collector Cutoff Region
Figure Capacitance
Motorola Bipolar Power Transistor Device Data
MJ13333
Vclamp Vclamp Vclamp
SWITCHING TIMES NOTE
resistive switching circuits, rise, fall, storage times have been defined apply both current voltage waveforms since they phase. However, inductive loads which common SWITCHMODE power supplies hammer drivers, current voltage waveforms phase. Therefore, separate measurements must made each waveform determine total switching time. this reason, following terms have been defined. Voltage Storage Time, Vclamp Voltage Rise Time, Vclamp Current Fall Time, Current Tail, Crossover Time, Vclamp enlarged portion inductive switching waveforms shown Figure visual identity these terms. designer, there minimal switching loss during storage time predominant switching power losses occur during crossover interval obtained using standard equation from AN-222: PSWT VCCIC(tc)f general, However, lower test currents this relationship valid. common with most switching transistors, resistive switching specified 25°C become benchmark designers, However, designers high frequency converter circuits, user oriented specifications which make this "SWITCHMODE" transistor inductive switching speeds tsv) which guaranteed 100°C.
TIME
Figure Inductive Switching Measurements
IB2(pk), BASE CURRENT (AMP) Vclamp 25°C
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure Reverse Base Current versus VBE(off) With External Base Resistance
RESISTIVE SWITCHING PERFORMANCE
TIME IC/IB TIME IC/IB VBE(off)
0.05 0.02 COLLECTOR CURRENT (AMP)
0.05
COLLECTOR CURRENT (AMP)
Figure Turn-On Switching Times
Figure Turn-Off Switching Times
Motorola Bipolar Power Transistor Device Data
MJ13333
Table Test Conditions Dynamic Performance
VCEO(sus) RBSOA INDUCTIVE SWITCHING
RESISTIVE SWITCHING
TURN-ON TIME adjusted obtain forced desired TURN-OFF TIME Diodes 1N4934 MJE200 MJE210 Adjust obtain switching RBSOA, VCEO(sus), inductive switching driver input resistive test circuit.
INPUT CONDITIONS
Varied Attain
CIRCUIT VALUES
Lcoil Rcoil
Lcoil Rcoil 0.05
Vclamp adjusted attain desired
Pulse Width
INDUCTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
TEST CIRCUITS
Adjusted Obtain Lcoil Lcoil VClamp
RESISTIVE TEST CIRCUIT
INPUT ABOVE DETAILED CONDITIONS 1N4937 EQUIVALENT Vclamp
Rcoil Lcoil
IC(pk)
Clamped
Vclamp TIME
Test Equipment Scope Tektronix Equivalent
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
P(pk)
0.07 0.05 0.03 0.02 0.01 0.01
0.05 0.02 0.01 SINGLE PULSE
RJC(t) r(t) 1.0°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) RJC(t)
DUTY CYCLE, t1/t2 1000
0.02 0.03
0.05
TIME (ms)
Figure Thermal Response
Motorola Bipolar Power Transistor Device Data
MJ13333
COLLECTOR CURRENT (AMP) 0.05 BONDING WIRE LIMIT THERMAL LIMIT 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMIT MJ13333 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
SAFE OPERATING AREA INFORMATION
FORWARD BIAS There limitations power handling ability transistor average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation, i.e., transistor must subjected greater dissipation than curves indicate. data Figure based 25_C. J(pk) variable depending power level. Second breakdown pulse limits valid duty cycles must derated when 25_C. Second breakdown limitations derate same thermal limitations. Allowable current voltages shown Figure found case temperature using appropriate curve Figure J(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. REVERSE BIAS
0.02 0.01 0.005
Figure Forward Bias Safe Operating Area
C(pk), PEAK COLLECTOR CURRENT (AMPS)
IC/IB VBE(off) 100°C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
inductive loads, high voltage high current must sustained simultaneously during turn-off, most cases, with base emitter junction reverse biased. Under these conditions collector voltage must held safe level below specific value collector current. This accomplished several means such active clamping, snubbing, load line shaping, etc. safe level these devices specified Reverse Bias Safe Operating Area represents voltage-current condition allowable during reverse biased turn-off. This rating verified under clamped conditions that device never subjected avalanche mode. Figure gives complete RBSOA characteristics.
Figure RBSOA, Reverse Bias Switching Safe Operating Area
POWER DERATING FACTOR FORWARD BIAS SECOND BREAKDOWN DERATING
THERMAL DERATING
CASE TEMPERATURE (°C)
Figure Power Derating
Motorola Bipolar Power Transistor Device Data
MJ13333
PACKAGE DIMENSIONS
SEATING PLANE
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. RULES NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005)
0.13 (0.005)
INCHES 1.550 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 0.215 0.440 0.480 0.665 0.830 0.151 0.165 1.187 0.131 0.188
MILLIMETERS 39.37 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 5.46 11.18 12.19 16.89 21.08 3.84 4.19 30.15 3.33 4.77
STYLE BASE EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE
Motorola Bipolar Power Transistor Device Data
MJ13333
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters vary different applications. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer.
reach EUROPE: Motorola Literature Distribution; P.O. 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Ting Road, N.T., Hong Kong. 852-26629298
Motorola Bipolar Power Transistor Device Data
*MJ13333/D*
MJ13333/D

Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data MJ13

Top Searches for this datasheet

Other recent searches