µPA1752 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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µPA1752 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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FIELD EFFECT POWER TRANSISTORS
µPA1752
SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL
DESCRIPTION
This product Dual N-Channel Field Effect Transistor designed power management application notebook computers, Li-ion battery application.
PACKAGE DIMENSIONS
(in: millimeter)
Source Gate Drain Source Gate Drain 5.37 Max.
+0.10 -0.05
FEATURES
Dual MOSFET chips small package Gate Drive Type On-Resistance RDS(on)1 Max. (VGS
1.44
±0.3
RDS(on)2 Max. (VGS Built-in Protection Diode Small Surface Mount Package (Power SOP8)
Max.
Ciss
Ciss Typ.
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ABSOLUTE MAXIMUM RATINGS terminal connected)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation unit)** Total Power Dissipation unit)** Channel Temperature Storage Temperature Duty Cycle Mounted ceramic substrate 2000
VDSS VGSS ID(DC) ID(pulse) Tstg
±5.0 +150
Gate Protection Diode Gate
Drain
Body Diode
Source
diode connected between gate source transistor serves protector against ESD. When this device acutally used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Document G10621EJ2V0DS00 Date Published April 1996 Printed Japan
1996
µPA1752
ELECTRICAL CHARACTERISTICS
Characteristics Drain Source On-state Resistance Symbol RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs Test Conditions VGS(on) 12.5 Min. Typ. Max. Unit
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T.
Wave Form
D.U.T.
VGS(on)
Wave Form
Duty Cycle
td(on) td(off) toff
µPA1752
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE Mounted ceramic substrate 2000 unit unit
Percentage Rated Power
Total Power Dissipation
Ambient Temperature
Ambient Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA
Mounted ceramic substrate 2000
Drain Current
Drain Current
unit ID(pulse)
ID(DC)
Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
Gate Source Voltage
µPA1752
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
0.01 0.001
Mounted ceramic Single Pulse substrate 2000 Single Pulse unit
Pulse Width
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
|yfs| Forward Transfer Admittance
Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
2.5A
Drain Current
RDS(on) Drain Source On-State Resistance
Gate Source Voltage GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cutoff Voltage
Pulsed
Channel Temperature
Drain Current
µPA1752
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS td(off) td(on)
1000 Ciss Coss Crss
VGS(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Gate Source Voltage
di/dt =100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1752
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide quality assurance semiconductor devices Semiconductor selection guide Power features application switching power supply Application circuits using Power Safe operating area Power Document TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
µPA1752
[MEMO]
µPA1752
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

µPA1752 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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