2SK3367 DESCRIPTION 2SK3367 N-Channel Field Effect Transisto

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2SK3367 DESCRIPTION 2SK3367 N-Channel Field Effect Transisto

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FIELD EFFECT TRANSISTOR
2SK3367
DESCRIPTION
2SK3367 N-Channel Field Effect Transistor designed DC/DC converter application notebook computers.
FEATURES
on-resistance RDS(on)1 MAX. (VGS RDS(on)2 12.0 MAX. (VGS RDS(on)3 14.0 MAX. (VGS Ciss Ciss 2800 TYP. Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER 2SK3367 2SK3367-Z PACKAGE TO-251 TO-252
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage (VGS Gate Source Voltage (VDS Drain Current (DC) Drain Current (Pulse)
Note
VDSS VGSS ID(DC) ID(pulse) Tstg
±144
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Note Duty cycle
THERMAL RESISTANCE
Channel case Channel ambient Rth(ch-C) Rth(ch-A) 3.13 °C/W °C/W
information this document subject change without notice. Before using this document, please confirm that this latest version.
devices/types available every country. Please check with local representative availability additional information.
Document D14257EJ2V0DS00 (2nd edition) Date Published April 2001 CP(K) Printed Japan
mark shows major revised points.
1999
2SK3367
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs VGS(on) TEST CONDITIONS 2800 1130 0.95 MIN. TYP. MAX. 12.0 14.0 UNIT
TEST CIRCUIT SWITCHING TIME
D.U.T.
Wave Form
TEST CIRCUIT GATE CHARGE
D.U.T.
(on)
Duty Cycle
Wave Form
(on) (off) toff
Data Sheet D14257EJ2V0DS
2SK3367
TYPICAL CHARACTERISTICS 25°C)
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
Total Power Dissipation
TOTAL POWER DISSIPATION CASE TEMPERATURE
Case Temperature
Case Temperature
DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
1000
FORWARD BIAS SAFE OPERATING AREA
Drain Current
ID(DC)
Drain Current
Lim10
ID(pulse)
25°C Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
Drain Current
0.01
150°C 125°C 75°C 25°C -25°C -40°C
0.001 0.0001
Gate Source Voltage
Data Sheet D14257EJ2V0DS
2SK3367
TRANSIENT THERMAL RESISTANCE PULSE WIDTH 1000
rth(t) Transient Thermal Resistance °C/W
Rth(ch-A) °C/W
Rth(ch-C) 3.13 °C/W
0.01 0.001 25°C Single Pulse 100m 1000
Pulse Width
RDS(on) Drain Source On-state Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
1000 0.01 0.001 0.0001 0.0001 0.001 0.01 Pulsed 1000 -40°C -25°C 25°C 75°C 125°C 150°C
Drain Current
RDS(on) Drain Source On-state Resistance
Gate Source Voltage
VGS(off) Gate Source Cut-off Voltage
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
GATE SOURCE CUT-OFF VOLTAGE CHANNEL TEMPERATURE
Pulsed
1000
Drain Current
Channel Temperature
Data Sheet D14257EJ2V0DS
2SK3367
RDS(on) Drain Source On-state Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
Diode Forward Current
SOURCE DRAIN DIODE FORWARD VOLTAGE 1000
0.01 Pulsed
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 10000
Ciss, Coss, Crss Capacitance
td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS 10000
Ciss
td(off)
1000
1000 Coss Crss
td(on)
0.01
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Data Sheet D14257EJ2V0DS
Gate Source Voltage
di/dt A/µs
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
2SK3367
PACKAGE DRAWINGS (Unit:
TO-251 (MP-3) TO-252 (MP-3Z)
1.5-0.1
+0.2
6.5±0.2 5.0±0.2
2.3±0.2 0.5±0.1
MAX.
6.5±0.2 5.0±0.2
1.5-0.1
+0.2
2.3±0.2 0.5±0.1
1.6±0.2
5.5±0.2
13.7 MIN.
MAX.
1.1±0.2
+0.2
0.5-0.1
0.5-0.1
1.Gate 2.Drain 3.Source 4.Fin (Drain)
+0.2
MAX. MAX. Gate Drain Source (Drain)
EQUIVALENT CIRCUIT
Drain
0.75
Gate
Body Diode
Gate Protection Diode
Source
Remark
diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Data Sheet D14257EJ2V0DS
1.1±0.2
MIN.
5.5±0.2 10.0 MAX.
MIN. TYP.
2SK3367
[MEMO]
Data Sheet D14257EJ2V0DS
2SK3367
information this document current April, 2001. information subject change without notice. actual design-in, refer latest publications NEC's data sheets data books, etc., most up-to-date specifications semiconductor products. products and/or types available every country. Please check with sales representative availability additional information. part this document copied reproduced form means without prior written consent NEC. assumes responsibility errors that appear this document. does assume liability infringement patents, copyrights other intellectual property rights third parties arising from semiconductor products listed this document other liability arising from such products. license, express, implied otherwise, granted under patents, copyrights other intellectual property rights others. Descriptions circuits, software other related information this document provided illustrative purposes semiconductor product operation application examples. incorporation these circuits, software information design customer's equipment shall done under full responsibility customer. assumes responsibility losses incurred customers third parties arising from these circuits, software information. While endeavours enhance quality, reliability safety semiconductor products, customers agree acknowledge that possibility defects thereof cannot eliminated entirely. minimize risks damage property injury (including death) persons arising from defects semiconductor products, customers must incorporate sufficient safety measures their design, such redundancy, fire-containment, anti-failure features. semiconductor products classified into following three quality grades: "Standard", "Special" "Specific". "Specific" quality grade applies only semiconductor products developed based customer-designated "quality assurance program" specific application. recommended applications semiconductor product depend quality grade, indicated below. Customers must check quality grade each semiconductor product before using particular application. "Standard": Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade semiconductor products "Standard" unless otherwise expressly specified NEC's data sheets data books, etc. customers wish semiconductor products applications intended NEC, they must contact sales representative advance determine NEC's willingness support given application. (Note) "NEC" used this statement means Corporation also includes majority-owned subsidiaries. "NEC semiconductor products" means semiconductor product developed manufactured defined above).

2SK3367 DESCRIPTION 2SK3367 N-Channel Field Effect Transisto

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