µPA1700 DESCRIPTION This product N-Channel Field Effect Tran

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µPA1700 DESCRIPTION This product N-Channel Field Effect Tran

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FIELD EFFECT POWER TRANSISTOR
µPA1700
DESCRIPTION
This product N-Channel Field Effect Transistor designed DC/DC converter power management applications note book computers.
PACKAGE DIMENSIONS millimeter)
1,2,3 Source Gate 5,6,7,8 Drain
FEATURES
On-Resistance RDS(on)1 Typ. (VGS RDS(on)2 Typ. (VGS
1.44
Ciss
Ciss Typ.
5.37
6.0±0.3
Small Surface Mount Package (Power SOP8)
0.15 +0.10 -0.05
Built-in Protection Diode
0.05
0.5±0.2 1.27 0.78 0.12 0.10 0.40 +0.10 -0.05
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
µPA1700G
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation °C)** Channel Temperature Storage Temperature Tstg +150 VDSS VGDS ID(DC) ID(pulse) ±7.0
Gate Protection Diode Source keep good radiate condition, recommended that pins soldering print board. Gate Body Diode
Duty Cycle Mounted ceramic substate 1200 diode connected between gate source transistor serves protector against ESD. When this device actually used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
Document G10479EJ2V0DS00 (2nd edition) Date Published September 1995 Printed Japan
1995
µPA1700
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Drain Source On-state Resistance Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) IDSS IGSS TEST CONDITIONS VGS(on) di/dt A/µs 0.84 MIN. TYP. MAX. UNIT
Ciss Coss Crss td(on) td(off) VF(S-D)
Test Circuit Switching Time
D.U.T.
Wave Form
Test Circuit Gate Charge
D.U.T.
Wave Form
(on)
Duty Cycle
(on) (off) toff
µPA1700
TYPICAL CHARACTERISTICS
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation
Mounted ceramic substrate 1200
Ambient Temperature
Ambient Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
Drain Current
FORWARD BIAS SAFE OPERATING AREA
ID(pulse)
Mounted ceramic substrate 1200
Drain Current
ID(DC)
Single Pulse
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
Gate Source Voltage
µPA1700
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-a) 62.5 °C/W
0.01 0.001
Mounted ceramic substrate 1200 Single Pulse
Pulse Width
|yfs| Forward Transfer Admittance
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Drain Current
Gate Source Voltage GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cutoff Voltage
Pulsed
Drain Current
Channel Temperature
µPA1700
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Channel Temperature CAPACITANCE DRAIN SOURCE VOLTAGE
Source Drain Voltage
SWITCHING CHARACTERISTICS
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off)
Ciss Coss
Crss
td(on)
Drain Current
Drain Source Voltage
REVERSE RECOVERY TIME DRAIN CURRENT
Reverse Recovery Time
Drain Source Voltage
Drain Current
Gate Charge
Gate Source Voltage
di/dt
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1700
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide quality assurance semiconductor devices Semiconductor selection guide Power features application switching power supply Application circuits using Power Safe operating area Power Document TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
µPA1700
[MEMO]
µPA1700
[MEMO]
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customer must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact Sales Representative advance. Anti-radioactive design implemented this product.
94.11

µPA1700 DESCRIPTION This product N-Channel Field Effect Tran

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