2SJ495 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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2SJ495 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER INDUSTRIAL
DESCRIPTION
This product P-Channel Field Effect Transistor designed high current switching applications.
PACKAGE DIMENSIONS
millimeter)
10.0
FEATURES
Super On-State Resistance
RDS(on)2 MAX. (VGS Ciss Ciss 4120 TYP. Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS 25°C)
Drain Source Voltage Gate Source Voltage* Gate Source Voltage Drain Current (DC) Drain Current (pulse)** Total Power Dissipation 25°C) Total Power Dissipation 25°C) Channel Temperature Storage Temperature kHz, Duty Cycle (+Side) **PW Duty Cycle VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) Tstg -20, m120 +150
2.54
13.5 MIN.
0.65 Gate Drain Source Drain Body Diode Source
2.54
THERMAL RESISTANCE
Channel Case Channel Ambient Rth(ch-c) Rth(ch-A) 3.57 62.5 °C/W °C/W
MP-45F (ISOLATED TO-220)
Gate
Gate Protection Diode
diode connected between gate source transistor serves protector against ESD. When this deveice acutally used, addtional protection circiut externally required voltage exceeding rated voltage applied this device.
Document D11267EJ2V0DS00 (2nd edition) Date Published November 1997 Printed Japan
12.0
RDS(on)1 MAX. (VGS
15.0
1997
2SJ495
ELECTRICAL CHARACTERISTICS 25°C)
CHARACTERISTICS Drain Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) IDSS IGSS Ciss COSS Crss td(on) td(off) VF(S-D) TEST CONDITIONS VGS(on) di/dt A/µs 4120 1750 -1.0 MIN. TYP. -1.5 MAX. -2.0 UNIT
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T.
Wave Form
VGS(on)
D.U.T.
Duty Cycle
Wave Form
td(on)
toff
td(off)
2SJ495
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
Percentage Rated Power Total Power Dissipation
TOTAL POWER DISSIPATION CASE TEMPERATURE
Case Temperature
Case Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed -125
FORWARD BIAS SAFE OPERATING AREA -1000
ID(pulse)
Drain Current
Drain Current
-100
-100
ID(DC)
-0.1
25°C Single Pulse
-100
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS -1000 Pulsed -25°C 25°C 125°C
Drain Current
-100
Gate Source Voltage
2SJ495
TRANSIENT THERMAL RESISTANCE PULSE WIDTH
rth(t) Transient Thermal Resistance °C/W
Rth(ch-a) 62.5°C/W
Rth(ch-c) 3.57°C/W
0.01 Single Pulse 0.001
Pulse Width
RDS(on) Drain Source On-State Resistance
FORWARD TRANSFER ADMITTANCE DRAIN CURRENT
Forward Transfer Admittance
1000
Pulsed
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Tch=-25°C 25°C 75°C 125°C
-100
-1000
Drain Current
RDS(on) Drain Source On-State Resistance
Gate Source Voltage GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
VGS(off) Gate Source Cutoff Voltage
Pulsed
-2.0
-1.5
-1.0
-0.5
Channel Temperature
Drain Current
-100
2SJ495
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE VGS=-10 -1000
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
-100
-1.0 -2.0 -3.0
Channel Temperature
Source Drain Voltage
CAPACITANCE DRAIN SOURCE VOLTAGE 100000
Ciss, Coss, Crss Capacitance td(on), td(off), Switching Time
SWITCHING CHARACTERISTICS
10000 Ciss
td(off)
1000
Coss Crss
-100
td(on) -0.1
-0.1
-100
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT 1000
Reverse Recovery Time
di/dt
Drain Source Voltage
VDD=-48
-0.1
-100
Diode Current
Gate Charge
Gate Source Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS -30A
2SJ495
Document Name semicondacter device reliabilty/quality control system Power features application switching power supply Application circuits using Power Safe operating area Power Guide prevent damage semiconductor devices electrostatic discharge (EDS) Document C11745E D12971E TEA-1035 TEA-1037 C11892E
2SJ495
[MEMO]
2SJ495
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.
96.5

2SJ495 SWITCHING P-CHANNEL POWER INDUSTRIAL DESCRIPTION

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