µPA1753 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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µPA1753 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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FIELD EFFECT POWER TRANSISTORS
µPA1753
SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL
DESCRIPTION
This product Dual N-Channel Field Effect Transistor designed power management application notebook computers, Li-ion battery application.
PACKAGE DIMENSIONS
(in: millimeter)
Source Gate Drain Source Gate Drain
1.44
FEATURES
Dual MOSFET chips small package Gate Drive Type On-Resistance RDS(on)1 Max. (VGS RDS(on)2 Max. (VGS
Max.
5.37 Max.
+0.10 -0.05
±0.3
Ciss
Ciss Typ.
Built-in Protection Diode Small Surface Mount Package (Power SOP8)
0.15
0.05 Min.
±0.2 0.10
1.27 0.40
0.78 Max. 0.12
+0.10 -0.05
ABSOLUTE MAXIMUM RATINGS terminals connected)
Drain Source Voltage Gate Source Voltage Drain Current (DC) Drain Current (pulse)Note Total Power Dissipation unit)Note Total Power Dissipation unit)Note Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) Tstg ±8.0 ±6.0 +150
Gate Protection Diode Gate Drain
Body Diode
Source
Notes Duty Cycle Mounted ceramic substrate 2000 diode connected between gate source transistor serves protector against ESD. When this device acutally used, additional protection circuit externally required voltage exceeding rated voltage applied this device.
information this document subject change without notice. Document D11496EJ2V0DS00 (2nd edition) Date Published October 1996 Printed Japan
1996
µPA1753
ELECTRICAL CHARACTERISTICS terminals connected)
Characteristics Drain Source On-state Resistance Symbol RDS(on)1 RDS(on)2 Gate Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) |yfs| IDSS IGSS Ciss Coss Crss td(on) td(off) VF(S-D) di/dt A/µs Test Conditions ±8.0 VGS(on) 18.6 Min. Typ. 0.76 Max. Unit
Test Circuit Switching Time
Test Circuit Gate Charge
D.U.T.
Wave Form
D.U.T.
VGS(on)
Wave Form
Duty Cycle
td(on) td(off) toff
µPA1753
DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation W/package
unit unit Mounted ceramic substrate 2000
Percentage Rated Power
Ambient Temperature
Ambient Temperature DRAIN CURRENT DRAIN SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA
Mounted ceramic substrate 2000 unit
Drain Current
ID(pulse) ID(DC)
Drain Current
Single Pulse
0.25
0.75
Drain Source Voltage
Drain Source Voltage
FORWARD TRANSFER CHARACTERISTICS Pulsed
Drain Current
Gate Source Voltage
µPA1753
TRANSIENT THERMAL RESISTANCE PULSE WIDTH rth(t) Transient Thermal Resistance °C/W
0.01 0.001
Mounted ceramic substrate 2000 Single Pulse unit
Pulse Width FORWARD TRANSFER ADMITTANCE DRAIN CURRENT |yfs| Forward Transfer Admittance
Pulsed
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE GATE SOURCE VOLTAGE Pulsed
Drain Current RDS(on) Drain Source On-State Resistance DRAIN SOURCE ON-STATE RESISTANCE DRAIN CURRENT
Gate Source Voltage GATE SOURCE CUTOFF VOLTAGE CHANNEL TEMPERATURE
VGS(off) Gate Source Cutoff Voltage
Pulsed
Channel Temperature
Drain Current
µPA1753
RDS(on) Drain Source On-State Resistance
DRAIN SOURCE ON-STATE RESISTANCE CHANNEL TEMPERATURE
SOURCE DRAIN DIODE FORWARD VOLTAGE Pulsed
Diode Forward Current
Channel Temperature CAPACITANCE DRAIN SOURCE VOLTAGE
Source Drain Voltage
SWITCHING CHARACTERISTICS
10000
td(on), td(off), Switching Time
Ciss, Coss, Crss Capacitance
td(off)
1000 Ciss Coss Crss
td(on)
VGS(on)
Drain Source Voltage
Drain Current
REVERSE RECOVERY TIME DRAIN CURRENT di/dt =100
Reverse Recovery Time
Drain Source Voltage
Diode Current
Gate Charge
Gate Source Voltage
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
µPA1753
REFERENCE
Document Name semiconductor device reliability/quality control system Quality grade semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide quality assurance semiconductor devices Semiconductor selection guide Power features application switching power supply Application circuits using Power Safe operating area Power Document TEI-1202 C11531E C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
µPA1753
[MEMO]
µPA1753
part this document copied reproduced form means without prior written consent Corporation. Corporation assumes responsibility errors which appear this document. Corporation does assume liability infringement patents, copyrights other intellectual property rights third parties arising from device described herein other liability arising from such device. license, either express, implied otherwise, granted under patents, copyrights other intellectual property rights Corporation others. While Corporation been making continuous effort enhance reliability semiconductor devices, possibility defects cannot eliminated entirely. minimize risks damage injury persons property arising from defect semiconductor device, customers must incorporate sufficient safety measures design, such redundancy, fire-containment, anti-failure features. devices classified into following three quality grades: "Standard", "Special", "Specific". Specific quality grade applies only devices developed based customer designated "quality assurance program" specific application. recommended applications device depend quality grade, indicated below. Customers must check quality grade each device before using particular application. Standard: Computers, office equipment, communications equipment, test measurement equipment, audio visual equipment, home electronic appliances, machine tools, personal electronic equipment industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment medical equipment (not specifically designed life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems medical equipment life support, etc. quality grade devices "Standard" unless otherwise specified NEC's Data Sheets Data Books. customers intend devices applications other than those specified Standard quality grade, they should contact sales representative advance. Anti-radioactive design implemented this product.
96.5

µPA1753 SWITCHING DUAL N-CHANNEL POWER INDUSTRIAL DESCRIPTIO

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