PACKAGED WATT POWER PHEMT FEATURES 27.5 P-1dB 10.5 Power Gain Noi
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LP750P100
PACKAGED WATT POWER PHEMT
FEATURES 27.5 P-1dB 10.5 Power Gain Noise Figure Power-Added-Efficiency
DESCRIPTION APPLICATIONS LP750P100 packaged Aluminum Gallium Arsenide/Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing Electron-Beam direct-write 0.25 Schottky barrier gate. recessed "mushroom" gate structure minimizes parasitic gate-source gate resistances. epitaxial structure processing have been optimized reliable high-power/low-noise applications. LP750 also features passivation available form surface-mount packages. LP750P100 designed medium-power, linear amplification. This device suitable applications commercial military environments, appropriate used medium power transistor SATCOM uplink transmitters, medium-haul digital radio transmitters, high efficiency amplifiers, systems.
ELECTRICAL SPECIFICATIONS TAmbient
Parameter Output Power Compression Power Gain Compression Maximum Available Gain Noise Figure Power-Added Efficiency Output Intercept Point Saturated Drain-Source Current Transconductance Pinch-Off Voltage Gate-Drain Breakdown Voltage Magnitude Gate-Source Breakdown Voltage Magnitude Gate-Source Leakage Current Magnitude Symbol P1dB G1dB IDSS |VBDGD| |VBDGS| |IGSL| Test Conditions 12GHz; IDSS 12GHz; IDSS 12GHz; IDSS 12GHz; IDSS 12GHz; IDSS; POUT 25dBm 12GHz; IDSS; POUT 10dBm -2.0 -1.2 -0.25 26.0 27.5 10.5 14.0 Units
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filtronicsolidstate.com
Revised: 03/02/01 Email: sales@filss.com
LP750P100
PACKAGED WATT POWER PHEMT
RECOMMENDED CONTINUOUS OPERATING LIMITS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Input Power Channel Operating Temperature Ambient Temperature Symbol TSTG Nominal -1.2 IDSS -20/50 Units
Notes: Device should operated below Recommended Continuous Operating Limits reliable performance.
ABSOLUTE RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current Input Power Channel Operating Temperature Storage Temperature
device.
Symbol TSTG
Test Conditions TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient
200% IDSS
Units
Notes: Even temporary operating conditions that exceed Absolute Maximum Ratings could result permanent damage
APPLICATIONS NOTES DESIGN DATA Applications Notes available from your local Filtronic Sales Representative directly from factory. Complete design data, including S-parameters, noise data, large-signal models available Filtronic site. HANDLING PRECAUTIONS avoid damage devices care should exercised during handling. Proper Electrostatic Discharge (ESD) precautions should observed stages storage, handling, assembly and, testing. These devices should treated Class (0-500 Further information control measures found MIL-STD-1686 MIL-HDBK-263.
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filtronicsolidstate.com
Revised: 03/02/01 Email: sales@filss.com
LP750P100
PACKAGED WATT POWER PHEMT
PACKAGE OUTLINE
dimensions mils, tolerance mils
information specifications subject change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Revised: 03/02/01 Email: sales@filss.com
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