LP6836P70 DESCRIPTION APPLICATIONS LP6836P70 packaged AlGaAs/InGa
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PACKAGED MEDIUM POWER PHEMT FEATURES Output Power 1-dB Compression 11.5 Power Gain Power-Added Efficiency
LP6836P70
DESCRIPTION APPLICATIONS LP6836P70 packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended applications requiring medium output power and/or high dynamic range. utilizes 0.25 Schottky barrier gate, defined electron-beam photolithography. Typical applications include pre-drivers commercial wireless infrastructure radio link highperformance power amplifiers.
ELECTRICAL SPECIFICATIONS TAmbient 25°C*
Parameter Saturated Drain-Source Current** Power 1-dB Compression Power Gain 1-dB Compression Power-Added Efficiency Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Magnitude Symbol IDSS P-1dB G-1dB IMAX IGSO |VBDGS| Test Conditions IDSS IDSS IDSS; -0.25 10.5 -0.8 -2.0 Units
Gate-Drain Breakdown |VBDGD| Voltage Magnitude *frequency=15 GHz, unless otherwise noted **Formerly binned LP6836P70-1 80-95 LP6836P70-2 96-105 LP6836P70-3 106-125
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01 Email: sales@filss.com
PACKAGED MEDIUM POWER PHEMT ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Notes: Symbol TSTG PTOT Test Conditions TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient TAmbient IDSS Units
LP6836P70
Operating conditions that exceed Absolute Maximum Ratings could result permanent damage device. Power Dissipation defined PTOT (PDC PIN) POUT, where PDC: Bias Power PIN: Input Power POUT: Output Power Absolute Maximum Power Dissipation de-rated follows above 25°C: PTOT= 1.0W (.0036W/°C) where heatsink ambient temperature.
This PHEMT susceptible damage from Electrostatic Discharge. Proper precautions should used when handling these devices.
HANDLING PRECAUTIONS avoid damage devices care should exercised during handling. Proper Electrostatic Discharge (ESD) precautions should observed stages storage, handling, assembly, testing. These devices should treated Class (0-500 Further information control measures found MIL-STD-1686 MIL-HDBK-263. APPLICATIONS NOTES DESIGN DATA Applications Notes available from your local Filtronic Sales Representative directly from factory. Complete design data, including S-parameters, noise data, large-signal models available Filtronic site.
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 1/22/01 Email: sales@filss.com
PACKAGED MEDIUM POWER PHEMT PACKAGE OUTLINE
(dimensions mils)
LP6836P70
information specifications subject change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 1/22/01 Email: sales@filss.com
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