LIMIN MITSUBISHI HVIGBT MODULES CM1800HC-34H HIGH POWER
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LIMIN
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM1800HC-34H
1800A VCES 1700V Insulated Type 1-element pack AISiC base plate
APPLICATION Inverters, Converters, choppers, Induction heating, converters.
OUTLINE DRAWING CIRCUIT DIAGRAM
Dimensions
±0.25
±0.25
±0.25
NUTS
±0.25
CIRCUIT DIAGRAM
20.25 41.25 NUTS 79.4 61.5 61.5
7MOUNTING HOLES
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
LABEL
29.5
Mar. 2003
LIMIN
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS 25°C)
Symbol VCES VGES (Note IEM(Note (Note Tstg Viso Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass 85°C Pulse Pulse 25°C, IGBT part Conditions Ratings 1700 1800 3600 1800 3600 15600 +150 +125 4000 6.67 13.00 2.84 6.00 0.88 2.00 Unit
(Note (Note
Charged part base plate, rms, sinusoidal, 60Hz 1min. Main terminals screw Mounting screw Auxiliary terminals screw Typical value
ELECTRICAL CHARACTERISTICS 25°C)
Symbol ICES Item Conditions VCES, 180mA, VGES, 25°C 1800A, 125°C 850V, 1800A, 850V, 1800A VGE1 VGE2 Resistive load switching operation 1800A, 1800A, -5100A Junction case, IGBT part Junction case, FWDi part Case fin, conductive grease applied Limits 2.40 2.95 21.0 15.4 2.50 0.006 1.60 2.00 2.70 0.80 2.70 0.008 0.013 Unit
Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge (on) Turn-on delay time Turn-on rise time (off) Turn-off delay time Turn-off fall time EC(Note Emitter-collector voltage (Note Reverse recovery time (Note Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance
Note
(Note
Pulse width repetition rate should such that device junction temp. (Tj) does exceed jmax rating. VEC, trr, die/dt represent characteristics anti-parallel, emitter collector free-wheel diode. Junction temperature (Tj) should increase beyond 150°C. Pulse width repetition rate should such cause negligible temperature rise.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
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