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SINGLE 2-INPUT OPEN DRAIN NAND GATE HIGH SPEED: (TYP.) POWER DISS


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74V1T03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
HIGH SPEED: (TYP.) POWER DISSIPATION: (MAX.) COMPATIBLE WITH OUTPUTS: (MIN), 0.8V (MAX) POWER DOWN PROTECTION INPUTS OPERATING VOLTAGE RANGE: (OPR) 4.5V 5.5V IMPROVED LATCH-UP IMMUNITY
(SOT23-5L)
(SC-70)
ORDER CODE: 74V1T03S 74V1T03C This device can, with external pull-up resistor, used wired configuration. This device also used driver other application requiring current sink. Power down protection provided inputs accepted inputs with regard supply voltage. This device used interface
DESCRIPTION 74V1T03 advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. internal circuit composed stages including buffer output, which provide high noise immunity stable output.
CONNECTION LOGIC SYMBOLS
September 1999
74V1T03
INPUT EQUIVALENT CIRCUIT DESCRIPTION
SYMBOL NAME FUNCT Data Input Data Input Data Output Ground (0V) Positive Supply Voltage
TRUTH TABLE
High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Tstg Supply Voltage Input Voltage Output Voltage Input Diode Current Output Diode Current Output Current Storage Temperature Lead Temperature sec) Parameter Value -0.5 +7.0 -0.5 +7.0 -0.5 +150 Unit
IGND Ground Current
Absolute Maximum Ratings those values beyond which damage device occur. Functional operation under these condition implied.
RECOMMENDED OPERATING CONDITIONS
Symbol dt/dv Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise Fall Time (see note 0.5V) Parameter Valu Unit
ns/V
from 0.8V
74V1T03
SPECIFICATIONS
Symb Parameter Cond ition High Level Input Voltage Level Input Voltage Level Output Voltage High Impedance Output Leakage Current Input Leakage Current Quiescent Supply Current Additional Worst Case Supply Current O=50 IO=8 5.5V Input 3.4V, other input Min. 0.36 ±0.25 Value Max. 0.44 ±2.5 Max.
±0.1 1.35
±1.0
ELECTRICAL CHARACTERISTICS (Input
Symb Parameter Test ndition Value Min. Max. Max.
tPLz tPzL
Propagation Delay Time
Voltage range 0.5V
CAPACITIVE CHARACTERISTICS
Symb Parameter Cond ition
Value Min. Max.
COUT
Input Capacitance Output Capacitance Power Dissipation Capacitance (note
10.5
Max.
isdefined value IC'sinternal equivalent capacitance which calculated fromthe operating current consumption without load. (Referto Test Circuit).Average operating current obtained following equation. ICC(opr)
74V1T03
TEST CIRCUIT
15/50 equivalent (includes probe capacitance) equivalent ZOUT pulse generator (typically
WAVEFORM: PROPAGATION DELAYS (f=1MHz; duty cycle)
74V1T03
SOT23-5L MECHANICAL DATA
MIN. 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.35 0.95 TYP. MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.55 MIN. 35.4 35.4 13.7 110.2 102.3 59.0 13.7 37.4 74.8 mils TYP. MAX. 57.1 51.2 19.7 118.1 118.1 68.8 21.6
DIM.
74V1T03
SC-70 MECHANICAL DATA
MIN. 0.80 0.00 0.80 0.15 0.10 1.80 1.80 1.15 0.10 0.65 TYP. MAX. 1.10 0.10 1.00 0.30 0.18 2.20 2.40 1.35 0.30 MIN. 31.5 31.5 70.9 70.9 45.3 25.6 51.2 mils TYP. MAX. 43.3 39.4 11.8 86.6 94.5 53.1 11.8
DIM.
74V1T03
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 1999 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil Canada China France Germany Italy Japan Korea Malaysia Malta Mexico Morocco Netherlands Singapore Spain Sweden Switzerland Taiwan Thailand United Kingdom U.S.A. http://www.st.com

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