IRFI5210 HEXFET® Power MOSFET Advanced Process Technology Is
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9.1404A
IRFI5210
HEXFET® Power MOSFET
Advanced Process Technology Isolated Package High Voltage Isolation 2.5KVRMS Sink Lead Creepage Dist. 4.8mm P-Channel Fully Avalanche Rated
VDSS -100V RDS(on) 0.06
-23A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. TO-220 Fullpak eliminates need additional insulating hardware commercial-industrial applications. moulding compound used provides high isolation capability thermal resistance between external heatsink. This isolation equivalent using micron mica barrier with standard TO-220 product. Fullpak mounted heatsink using single clip single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, -10V Continuous Drain Current, -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 srew
Max.
-140 0.42 -5.0 (1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient
Typ.
Max.
Units
°C/W
3/16/98
IRFI5210
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain Sink Capacitance
Min. -100 -2.0
Typ. -0.11 2700
Max. Units Conditions -250µA V/°C Reference 25°C, -1mA 0.06 10V, -12A -4.0 VGS, -250µA -50V, -21A -100V, -250 -80V, 150°C -100 -20V -21A -80V -10V, Fig. -50V -21A 2.4, Fig. Between lead, (0.25in.) from package center contact -25V 1.0MHz, Fig. 1.0MHz
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -140 -1.3
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -12A, 25°C, -21A di/dt -100A/µs
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle t=60s, =60Hz
Uses IRF5210 data test conditions
-25V, starting 25°C, 3.1mH
-21A. (See Figure
-21A, di/dt -480A/µs, V(BR)DSS,
175°C
IRFI5210
1000
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
rain-to-S ource urrent
rain-to-S ource urrent
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
-4.5V 175°C
-4.5V 25°C
rain-to-S ource oltage
rain-to-S ource oltage
Typical Output Characteristics
Typical Output Characteristics
1000
rain-to-S ource esistance alized)
-35A
rain-to urre
-10V
Junction perature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRFI5210
6000
5000
ate-to-S ource oltage
-80V -50V -20V
apacitanc
4000
3000
2000
1000
rain-to-S ource oltage
Total harge
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
everse rain urrent
(on)
rain urrent
175°C 25°C
100µ
25°C 175°C ingle
1000
ource-to-D rain oltage
rain-to-S ource oltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRFI5210
D.U.T.
Drain Current
-10V
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Case Temperature
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.01
0.01 0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI5210
2000
ingle ulse valanc nergy
1600
-8.6A -15A -21A
0.01
12a. Unclamped Inductive Test Circuit
(BR)DSS
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
-10V
-3mA
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
D.U.T.
1200
tarting Junc tion perature
12c. Maximum Avalanche Energy Drain Current
.2µF .3µF
IRFI5210
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
VGS*
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity P-Channel P-Channel Driver P-Channel Measurements
Driver Gate Drive P.W. Period P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
ISD]
5.0V Logic Level Drive Devices P-Channel HEXFETS
IRFI5210
Package Outline
TO-220 Fullpak Outline Dimensions shown millimeters (inches)
10.60 (.417) 10.40 (.409) 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) SOURCE
7.10 (.280) 6.70 (.263)
16.00 (.630) 15.80 (.622)
1.15 (.045)
NOTES: 14.5M 1982 LLIN
3.30 (.130) 3.10 (.122) -B13.70 (.540) 13.50 (.530)
1.40 (.055) 1.05 (.042) 2.54 (.100) 0.90 (.035) 0.70 (.028) 0.25 (.010) 0.48 (.019) 0.44 (.017)
2.85 (.112) 2.65 (.104)
4.80 (.189)
Part Marking Information
TO-220 Fullpak
E401
LOGO ASSEMBLY CODE
PART NUMBER
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 3/98
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