IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) Low-p

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IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) Low-p

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-90902B
IRF640S/L
HEXFET® Power MOSFET
Surface Mount (IRF640S) Low-profile through-hole (IRF640L) Available Tape Reel (IRF640S) Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS 200V RDS(on) 0.18
Description
Third Generation HEXFETs from International Rectifier provide designer with best combinations fast switching ruggedized device design, on-resistance costeffectiveness. D2Pak surface mount power package capable accommodating sizes HEX-4. provides highest power capability lowest possible on-resistance existing surface mount package. D2Pak suitable high current applications because internal connection resistance dissipate 2.0W typical surface mount application.The through-hole version (IRF640L) available low-profile applications.
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Junction-to-Ambient Mounted,steady-state)**
Typ.
Max.
Units
°C/W
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7/20/99
IRF640S/L
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance V(BR)DSS IDSS IGSS td(on) td(off) Ciss Coss Crss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.29 1300 Max. Units Conditions 250µA V/°C Reference 25°C, 0.18 10V, 250µA 50V, 200V, 160V, 125°C -100 -20V =160V 10V, Fig. =100V 5.4, Fig. Between lead, center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 18A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle
Uses IRF640 data test conditions
50V, starting 25°C, 2.7mH
18A. (See Figure
150°C When mounted square FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994.
18A, di/dt 150A/µs, V(BR)DSS,
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IRF640S/L
Typical Output Characteristics, 25oC
Typical Output Characteristics, 175oC
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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IRF640S/L
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRF640S/L
D.U.T.
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF640S/L
12a. Unclamped Inductive Test Circuit
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRF640S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
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IRF640S/L
D2Pak Package Outline
0.54 0.29 (.055
4.69 4.20
(.05 (.04
0.16
6.47 6.18 (.20 (.18 (.110 (.090 2.61 2.32
(.07 (.05
1.40 1.14 (.20
(.03 (.02 (.01
(.022 (.018
1.43
FTER 4.5M ATSINK
8.89 (.70
(.15 (.08 (.100
Part Marking Information
D2Pak
PART F530S
DATE CODE
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IRF640S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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IRF640S/L
Tape Reel Information
D2Pak
CTIO
CTIO
(.53 (.50
(1.0 (.94
(14.1 MAX.
60.00 (2.3
IA-4
(1.19 MAX.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 GREAT BRITAIN: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 2200 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: 4630 TAIWAN:16 Suite 207, Sec. South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data specifications subject change without notice. 7/99
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IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) Low-p

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