FA38SA50 HEXFET® Power MOSFET Fully Isolated Package Easy Pa
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9.1615
FA38SA50
HEXFET® Power MOSFET
Fully Isolated Package Easy Parallel On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Drain Case Capacitance Internal Inductance
VDSS 500V RDS(on) 0.13
Description
Third Generation HEXFETs from International Rectifier provide designer with best combination fast switching, ruggedized device design, on-resistance cost-effectiveness. SOT-227 package universally preferred commercial-industrial applications power dissipation levels approximately watts. thermal resistance SOT-227 contribute wide acceptance throughout industry.
T-22
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG VISO Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Insulation Withstand Voltage (AC-RMS) Mounting torque, srew
Max.
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface
Typ.
0.05
Max.
0.25
Units
°C/W
4/25/97
FA38SA50
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS d(on) d(off) Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
Typ. 0.66 6900 1600
Max. Units Conditions 1.0mA V/°C Reference 25°C, 0.13 10V, VGS, 250µA 25V, 500V, 400V, 125°C -200 -20V 400V 10V, Fig. 250V (Internal) Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 38A, 1300 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
38A, di/dt 410A/µs, V(BR)DSS
150°C
Starting 25°C, 0.80mH
38A. (See Figure
Pulse width 300µs; duty cycle
FA38SA50
1000
4.5V
1000
Drain-to-Source Current
Drain-to-Source Current
8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
4.5V
IDTH 25°C
4.5V
20µs PULSE WIDTH
urce
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
VGS, Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
FA38SA50
16000 14000 12000 10000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
400V 250V 100V
Capacitance (pF)
Ciss
8000 6000 4000
Coss Crss
2000
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
1000 1000
Typical Gate Charge Gate-to-Source Voltage
OPERATION THIS AREA LIMITED RDS(on)
Reverse Drain Current
Drain Current
10us
100us
Single Pulse
10ms 1000 10000
,Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
FA38SA50
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
10b. Switching Time Waveforms
thJC
0.50 0.20 0.10 0.05 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
Thermal Response
0.01
0.02 0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
FA38SA50
1200
Single Pulse Avalanche Energy (mJ)
BOTTOM
1000
12a. Unclamped Inductive Test Circuit
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
FA38SA50
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
FA38SA50
SOT-227 Package Details
Tube
QUANTITY TUBE ASHER
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: Bldg., 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 4/97
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