Dual In-Series General-Purpose Controlled-Avalanche Diode TO-236A
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BAS31
Dual In-Series General-Purpose Controlled-Avalanche Diode
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4) .056 (1.43) .052 (1.33)
Mounting Layout
0.037 (0.95)
0.037 (0.95)
View
0.035 (0.9)
Dimensions inches (millimeters)
0.079 (2.0)
max. .004 (0.1)
0.031 (0.8)
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
Features
.045 (1.15) .037 (0.95)
Silicon Epitaxial Planar Diode general purpose switching applications
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Mechanical Data
Case: SOT-23 (TO-236AB) Plastic Package Weight: approx. 0.008g Marking Code: Packaging Codes/Options: E8/10K reel (8mm tape), 30K/box E9/3K reel (8mm tape), 30K/box
25°C unless otherwise noted
Dimensions inches (millimeters)
View
Maximum Ratings Thermal Characteristics
Parameter Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Forward Current (continuous) Peak Repetitive Forward Current Non-Repetitive Peak Forward Current
Symbol VRRM IRRM single diode loaded dual diode loaded IRFM 100µs IFSM Ptot ERRM
Value 150(1) 0.75 250(1) 500(1) +150
Unit °C/W
Power Dissipation Peak Repetitive Reverse Energy 50µs, 20HZ, 25°C Typical Thermal Resistance Junction Ambient Junction Temperature Storage Temperature Range
Notes: Device Fiberglass Substrate, layout second page Square wave with 25°C prior surge
9/19/00
BAS31
Dual In-Series General-Purpose Controlled-Avalanche Diode
Electrical Characteristics (per diode)
Parameter Symbol
25°C unless otherwise noted
Test Condition 10mA 50mA 100mA 200mA 400mA 90V, 150°C 1MHz 30mA 30mA, 100,
1.00 1.25
Unit
Forward Voltage
Reverse Current Reverse Avalanche Breakdown Voltage Diode Capacitance Reverse Recovery Time
V(BR)R
Layout test
Thickness: Fiberglass 0.059 (1.5 Copper leads 0.012 (0.3
0.30 (7.5) 0.12
0.59 (15) 0.47 (12)
0.03 (0.8)
0.06 (1.5) 0.20 (5.1)
Dimensions inches (millimeters)
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