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NDH8521C Dual P-Channel Enhancement Mode Field Effect Transistor
These dual P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
N-Ch RDS(ON)=0.033 VGS=10 RDS(ON)=0.05 VGS=4.5 P-Ch -2.7 V,RDS(ON)=0.07 VGS=-10 RDS(ON)=0.115 VGS=-4.5 Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings
Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed TJ,TSTG
25°C unless otherwise noted
N-Channel
(Note
P-Channel -2.7
Units
10.5
Power Dissipation Single Operation
(Note
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
1997 Fairchild Semiconductor Corporation
NDH8521C Rev.C
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Type Units CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage -250 Zero Gate Voltage Drain Current 55oC IGSSF IGSSR VGS(th) Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, 125oC VGS, -250 125oC RDS(ON) Static Drain-Source On-Resistance 125oC -2.7 125oC -4.5 ID(on) On-State Drain Current -4.5 Forward Transconductance -2.7 DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance N-Channel P-Channel N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch P-Ch N-Ch 10.5 P-Ch N-Ch P-Ch
N-Ch P-Ch N-Ch
P-Ch
-100
CHARACTERISTICS (Note Gate Threshold Voltage N-Ch -0.8 1.67 1.04 -1.6 -1.2 0.027 0.04 0.041 0.062 0.088 0.102 -1.6 0.033 0.063 0.05 0.07 0.125 0.115
Output Capacitance Reverse Transfer Capacitance
NDH8521C Rev.C
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Type Units SWITCHING CHARACTERISTICS (Note tD(on) tD(off) Turn Delay Time Turn Rise Time N-Channel VGEN RGEN P-Channel VGEN RGEN N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Total Gate Charge Gate-Source Charge N-Channel P-Channel -2.7 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage N-Ch P-Ch 0.67 -0.67
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design. (Note2) (Note2)
Turn Delay Time
Turn Fall Time
Gate-Drain Charge
0.67 -0.67 0.72 -0.74 -1.2
N-Ch P-Ch
JA(t
JC+RCA(
RDS(ON
Typical single device operation using board layout shown below 4.5"x5" FR-4 still environment:
156oC/W when mounted 0.0025 copper.
Scale letter size paper. Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8521C Rev.C
Typical Electrical Characteristics: N-Channel
=10V
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V
2.25 1.75 1.25 0.75
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure N-Channel On-Region Characteristics.
Figure N-Channel On-Resistance Variation with Gate Voltage Drain Current.
3.8A
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
DS(on), NORMALIZED
125°C
DS(ON) NORMALIZED
1.25
25°C
0.75
-55°C
0.25
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure N-Channel On-Resistance Variation with Temperature.
Figure N-Channel On-Resistance Variation with Drain Current Temperature.
25°C
DRAIN CURRENT
GATE-SOURCE THRESHOLD VOLTAGE
-55°C
250µA
125°C
NORMALIZED
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure N-Channel Transfer Characteristics.
Figure N-Channel Gate Threshold Variation with Temperature.
NDH8521C Rev.C
Typical Electrical Characteristics: N-Channel (continued)
1.12 DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08
250µA
REVERSE DRAIN CURRENT
125°C 25°C -55°C
NORMALIZED
1.04
0.96
0.92
JUNCTION TEMPERATURE (°C)
BODY DIODE FORWARD VOLTAGE
Figure N-Channel Breakdown Voltage Variation with Temperature.
Figure N-Channel Body Diode Forward Voltage Variation with Current Temperature.
1500 1000 CAPACITANCE (pF)
3.8A
GATE-SOURCE VOLTAGE
Ciss Coss
Crss
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure N-Channel Capacitance Characteristics.
Figure N-Channel Gate Charge Characteristics.
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
125°C
DRAIN CURRENT
Figure N-Channel Transconductance Variation with Drain Current Temperature.
NDH8521C Rev.C
Typical Electrical Characteristics: P-Channel (continued)
-10V -6.0 -5.0 -4.5
DRAIN-SOURCE CURRENT
DRAIN-SOURCE ON-RESISTANCE
-4.0
DS(on) NORMALIZED
-3.5V
-3.5
-4.0 -4.5 -5.0 -6.0 -7.0
-3.0
-0.5
-1.5
-2.5
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure P-Channel On-Region Characteristics.
Figure P-Channel On-Resistance Variation with Gate Voltage Drain Current.
-2.7A
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-10V
DRAIN-SOURCE ON-RESISTANCE
-10V
125°C
DS(ON), NORMALIZED
25°C -55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure P-Channel On-Resistance Variation with Temperature.
Figure P-Channel On-Resistance Variation with Drain Current Temperature.
GATE-SOURCE THRESHOLD VOLTAGE
-10V
DRAIN CURRENT
-55°C 125°C
25°C
-250µA
GS(th), NORMALIZED
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure P-Channel Transfer Characteristics.
Figure P-Channel Gate Threshold Variation with Temperature.
NDH8521C Rev.C
Typical Electrical Characteristics: P-Channel (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 1.06 1.04 1.02 0.98 0.96 0.94
REVERSE DRAIN CURRENT
-250µA
125°C 25°C
NORMALIZED
0.01
-55°C
0.001
JUNCTION TEMPERATURE (°C)
0.0001
BODY DIODE FORWARD VOLTAGE
Figure P-Channel Breakdown Voltage Variation with Temperature.
Figure P-Channel Body Diode Forward Voltage Variation with Current Temperature.
1500 1000 GATE-SOURCE VOLTAGE
-2.7A
=-5V -10V -15V
CAPACITANCE (pF)
Ciss Coss
Crss
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure P-Channel Capacitance Characteristics.
Figure P-Channel Gate Charge Characteristics.
TRANSCONDUCTANCE (SIEMENS)
-55°C
25°C 125°C
DRAIN CURRENT
Figure P-Channel Transconductance Variation with Drain Current Temperature.
NDH8521C Rev.C
Typical Thermal Characteristics: P-Channel
DRAIN CURRENT
DRAIN CURRENT
0.05 0.02 0.01
SINGLE PULSE Note 25°C
DRAIN-SOURCE VOLTAGE
0.05
-10V SINGLE PULSE
Note
25°C
0.01
DRAIN-SOURCE VOLTAGE
Figure N-Channel Maximum Safe Operating Area.
Figure P-Channel Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE
0.05 0.02 0.01 Single Pulse
r(t) Note
P(pk)
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note1. Transient thermal response will change depending circuit board design.
d(on)
d(off)
VOUT
PULSE WIDTH
Figure P-Channel Switching Test Circuit.
Figure P-Channel Switching Waveforms.
NDH8521C Rev.C
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