SuperSOT N-Channel enhancement mode power field effect transistors pro

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SuperSOT N-Channel enhancement mode power field effect transistors pro

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NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor
SuperSOT N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance. These devices particularly suited voltage applications such notebook computer power management, other battery powered circuits where fast switching, in-line power loss needed very small outline surface mount package.
Features
RDS(ON) 0.033 RDS(ON) 0.05 Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings 25°C unless otherwise note
Symbol VDSS VGSS TJ,TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Operating Storage Temperature Range
(Note (Note
NDH8503N 10.5
Units
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
1997 Fairchild Semiconductor Corporation
NDH8503N Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units
CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55oC Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, 125oC Static Drain-Source On-Resistance 125oC ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 10.5 1.67 1.04 0.027 0.04 0.041 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.033 0.06 0.05
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN
NDH8503N Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions 0.67
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
otes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 0.67 0.72
PD(t
JA(t
JC+RCA(t
Typical single device operation using board layout shown below 4.5"x5" FR-4 still environment: 156oC/W when mounted 0.0025 copper.
Scale letter size paper. Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8503N Rev.C
Typical Electrical Characteristics
=10V
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V
2.25 1.75 1.25 0.75
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
3.8A
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
1.75
125°C
DS(on), NORMALIZED
DS(ON) NORMALIZED
1.25
25°C
0.75
-55°C
0.25
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
25°C
DRAIN CURRENT
GATE-SOURCE THRESHOLD VOLTAGE
-55°C
250µA
125°C
NORMALIZED
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH8503N Rev.C
Typical Electrical Characteristics
1.12 DRAIN-SOURCE BREAKDOWN VOLTAGE
1.08
250µA
REVERSE DRAIN CURRENT
125°C 25°C -55°C
NORMALIZED
1.04
0.96
0.92
JUNCTION TEMPERATURE (°C)
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
1500 1000 CAPACITANCE (pF)
3.8A
GATE-SOURCE VOLTAGE
Ciss Coss
Crss
GATE CHARGE (nC)
DRAIN SOURCE VOLTAGE
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
INVERTED
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH8503N Rev.C
Typical Electrical Thermal Characteristics
TRANSCONDUCTANCE (SIEMENS)
-55°C
DRAIN CURRENT
25°C
125°C
SINGLE PULSE
Note 25°C
0.03
0.01
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.05
r(t) Note
P(pk)
0.02 0.01
Single Pulse
0.01
Duty Cycle,
0.001 0.0001
0.001
0.01
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH8503N Rev.C

SuperSOT N-Channel enhancement mode power field effect transistors pro

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