SuperSOTTM-8 P-Channel enhancement mode power field effect transistors

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SuperSOTTM-8 P-Channel enhancement mode power field effect transistors

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NDH834P P-Channel Enhancement Mode Field Effect Transistor
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such battery powered circuits portable electronics where fast switching, in-line power loss, resistance transients needed.
Features
-5.6 RDS(ON) 0.035 -4.5 RDS(ON) 0.045 -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame superior thermal electrical capabilities. High density cell design extremely RDS(ON). Exceptional on-resistance maximum current capability.
Absolute Maximum Ratings
Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
25°C unless otherwise noted
NDH834P
(Note
Units
-5.6
Maximum Power Dissipation
(Note (Note (Note
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
1997 Fairchild Semiconductor Corporation
NDH834P Rev.C
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current -250 55oC Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, -250 125oC Static Drain-Source On-Resistance -4.5 -5.6 125oC -2.7 -5.2 ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current -4.5 -2.7 Forward Transconductance -5.6 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1820 -0.4 -0.3 -0.62 -0.4 0.029 0.039 0.038 -100
CHARACTERISTICS (Note Gate Threshold Voltage -0.8 0.035 0.063 0.045
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge -5.6 -4.5 VGEN -4.5 RGEN
NDH834P Rev.C
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions -1.5
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -1.5 -0.7
-1.2
JA(t
J-TA
JC+RC
J-TA
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted copper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH834P Rev.C
Typical Electrical Characteristics
DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE CURRENT
-4.5V -3.5 -3.0
-2.7 -2.5
-2.0
-2.0
-2.5 -2.7 -3.0 -3.5
-1.5
-4.5
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
-5.6A
-4.5V
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-4.5V
DRAIN-SOURCE ON-RESISTANCE
125°C
DS(ON), NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
GATE-SOURCE THRESHOLD VOLTAGE
=-55°C 25°C 125°C
GS(th), NORMALIZED
-250µA
-0.5
-1.5 GATE SOURCE VOLTAGE
-2.5
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH834P Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE 1.08 1.06 1.04 1.02 0.98 0.96 0.94 0.92 JUNCTION TEMPERATURE (°C)
REVERSE DRAIN CURRENT
-250µA
125°C 25°C
NORMALIZED
-55°C
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
5000 3000 GATE-SOURCE VOLTAGE 2000 CAPACITANCE (pF)
-5.6A Ciss
-10V
-15V
1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
-VDD
d(on)
d(off)
VOUT
PULSE WIDTH
INVERTED
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH834P Rev.C
Typical Thermal Characteristics
TRANSCONDUCTANCE (SIEMENS)
STEADY-STATE POWER DISSIPATION
-55°C 25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
-4.5V
0.05
Still -4.5V
4.5"x5" FR-4 Board
SINGLE PULSE Note 25°C
COPPER MOUNTING AREA
0.01
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05
0.02 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
0.03 0.02 0.01
0.01 Single Pulse
Duty Cycle,
.001
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH834P Rev.C
NDH834P Rev.C
NDH834P Rev.C

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors

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