HIGH VOLTAGE FAST-SWITCHING POWER DARLINGTON STMicroelectronics P

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HIGH VOLTAGE FAST-SWITCHING POWER DARLINGTON STMicroelectronics P

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BU808DFP
HIGH VOLTAGE FAST-SWITCHING POWER DARLINGTON
STMicroelectronics PREFERRED SALESTYPE MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY 1400 HIGH CURRENT GAIN TYP. FULLY MOLDED ISOLATED PACKAGE ISOLATION (U.L. COMPLIANT) BASE-DRIVE REQUIREMENTS DEDICATED APPLICATION NOTE AN1184
APPLICATIONS COST EFFECTIVE SOLUTION HORIZONTAL DEFLECTION INCHES. DESCRIPTION BU808DFP transistor monolithic Darlington configuration. manufactured using Multiepitaxial Mesa technology cost-effective high performance.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol June 2000 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Peak Current Total Dissipation orage Temperature Max. Operating Junction Temperature Value 1400
BU808DFP
THERMAL DATA
hj-ca Thermal Resistance Junction-case 2.98
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symb CE(sat BE(s Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitt Saturation Voltage Current Gain INDUCTIVE Storage Time Fall Time INDUCTIVE Storage Time Fall Time Test Cond ition 1400 Min. Max.
VBEoff VBEoff
Diode orward Voltage
Pulsed: Pulse duration duty cycle
Safe Operating Area
Thermal Impedance
BU808DFP
Derating Curve Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Power Losses
Switching Time Inductive Load 16KHz
BU808DFP
Switching Time Inductive Load 16KHZ Reverse Biased
BASE DRIVE INFORMATION order saturate power switch reduce conduction losses, adequate direct base current provided lowest gain (line scan phase). other hand, negative base current must provided turn power transistor (retrace phase). Most dissipation, deflection application, occurs switch-off. Therefore essential determine value which minimizes power losses, fall time and, consequently, curves have been defined give total power losses, function both scanning frequencies choosing optimum negative drive. test circuit illustrated figure Inductance serves control slope negative base current recombine excess carrier collector when base current still present, this would avoid tailing phenomenon collector current. values calculated from following equations: (IC)2 (VCEfly)2 Where operating collector current, VCEfly= flyback voltage, frequency oscillation during retrace.
BU808DFP
Figure Inductive Load Switching Test Circuits.
Figure Switching Waveforms Deflection Circuit
BU808DFP
TO-220FP MECHANICAL DATA
DIM. MIN. 28.6 15.9 0.45 0.75 1.15 1.15 4.95 30.6 10.6 16.4 1.126 0.385 0.626 0.354 0.118 TYP. MAX. 2.75 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
BU808DFP
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specification mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components life support devices systems without express written approval STMicroelectronics. logo trademark STMicroelectronics 2000 STMicroelectronics Printed Italy Rights Reserved STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A. http://www.st.com

HIGH VOLTAGE FAST-SWITCHING POWER DARLINGTON STMicroelectronics P

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