BPV11F very high sensitive silicon epitaxial planar phototransistor st

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BPV11F very high sensitive silicon epitaxial planar phototransistor st

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BPV11F
BPV11F very high sensitive silicon epitaxial planar phototransistor standard plastic package. epoxy package itself filter, spectrally matched GaAs emitters 900nm). viewing angle makes insensible ambient straylight. base terminal available enable biasing sensitivity control.
Features
Very high radiant sensitivity Standard package filter GaAs emitters (950 Angle half sensitivity Base terminal available
12784
Applications
Detector industrial electronic circuitry, measurement control
Absolute Maximum Ratings
Tamb 25_C Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCBO VCEO VEBO Ptot Tstg RthJA Value -55.+100 Unit
tp/T 0.5, Tamb
from body
Document Number 81505 Rev. 20-May-99
www.vishay.de FaxBack +1-408-970-5600
BPV11F
Vishay Telefunken Basic Characteristics
Tamb 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Current Gain Collector Emitter Capacitance Collector Base Capacitance Collector Light Current Test Conditions MHz, MHz, Ee=1 mW/cm2, l=950 VCE=5 Symbol V(BR)CE
Unit
ICEO CCEO CCBO l0.5 VCEsat toff
900.980
Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Collector Emitter Saturation Ee=1 mW/cm2, l=950 Voltage IC=1 Turn-On Time VS=5 IC=5 RL=100 Turn-Off Time VS=5 IC=5 RL=100 Cut-Off Frequency VS=5 IC=5 RL=100
Typical Characteristics (Tamb 25_C unless otherwise specified)
Total Power Dissipation Collector Dark Current
RthJA
8249
8300
Tamb Ambient Temperature
Tamb Ambient Temperature
Figure Total Power Dissipation Ambient Temperature
Figure Collector Dark Current Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
Document Number 81505 Rev. 20-May-99
BPV11F
Relative Collector Current Amplification
8239
VCE=5V
VCE=5V Ee=1mW/cm2 l=950nm
8250
0.01
Tamb Ambient Temperature
Collector Current
Figure Relative Collector Current Ambient Temperature
Collector Light Current Collector Emitter Capacitance
Figure Amplification Collector Current
f=1MHz
VCE=5V l=950nm
Collector Emitter Voltage
0.01 0.01
8244
Irradiance
8240
Figure Collector Light Current Irradiance
Collector Emitter Capacitance
Figure Collector Base Capacitance Collector Base Voltage
f=1MHz
Collector Light Current
l=950nm
Ee=1 mW/cm2 mW/cm2 mW/cm2
mW/cm2 0.05 mW/cm2 0.02 mW/cm2
Collector Emitter Voltage
8245
8247
Collector Emitter Voltage
Figure Collector Light Current Collector Emitter Voltage
Figure Collector Emitter Capacitance Collector Emitter Voltage
Document Number 81505 Rev. 20-May-99
www.vishay.de FaxBack +1-408-970-5600
BPV11F
Turn Turn Time Relative Sensitivity
8253
VCE=5V RL=100W l=950nm
toff
8248
Collector Current
Figure Turn On/Turn Time Collector Current
Figure Relative Radiant Sensitivity Angular Displacement
Relative Spectral Sensitivity
8258
Wavelength
1000
1100
Figure Relative Spectral Sensitivity Wavelength
www.vishay.de FaxBack +1-408-970-5600
Document Number 81505 Rev. 20-May-99
BPV11F
Vishay Telefunken Dimensions
9612200
Document Number 81505 Rev. 20-May-99
www.vishay.de FaxBack +1-408-970-5600
BPV11F
Vishay Telefunken Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Telefunken products unintended unauthorized application, buyer shall indemnify Vishay-Telefunken against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
www.vishay.de FaxBack +1-408-970-5600
Document Number 81505 Rev. 20-May-99

BPV11F very high sensitive silicon epitaxial planar phototransistor st

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