IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET Logic-Level Gat

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET Logic-Level Gat

Datasheet Thumbnail

Top Searches for this datasheet

95081A
IRLR024NPbF IRLU024NPbF
HEXFET® Power MOSFET
Logic-Level Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free
VDSS RDS(on) 0.065
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques achieve lowest possible onresistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET power MOSFETs well known for, provides designer with extremely efficient device wide variety applications. D-PAK designed surface mounting using vapor phase, infrared, wave soldering techniques. straight lead version (IRFU series) through-hole mounting applications. Power dissipation levels watts possible typical surface mount applications.
D-Pak I-Pak IRLR024NPbF IRLU024NPbF
Absolute Maximum Ratings
Parameter
25°C 100°C 25°C dv/dt TSTG Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Soldering Temperature, seconds
Max.
(1.6mm from case
Units
W/°C V/ns
Thermal Resistance
Parameter
Junction-to-Case Case-to-Ambient (PCB mount)** Junction-to-Ambient
Typ.
Max.
Units
°C/W
www.irf.com
When mounted square (FR-4 G-10 Material recommended footprint soldering techniques refer application note #AN-994
12/6/04
IRLR/U024NPbF
Electrical Characteristics 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Min. Typ. Max. Units Conditions 250µA 0.061 V/°C Reference 25°C, 0.065 10V, 0.080 5.0V, 0.110 4.0V, 9.0A VGS, 250µA 25V, 55V, 44V, 150°C -100 -16V 5.0V, Fig. 5.0V 2.4, Fig. Between lead, (0.25in.) from package center contact 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, 11A, 25°C, di/dt 100A/µs Intrinsic turn-on time negligible (turn-on dominated LS+LD)
Repetitive rating; pulse width limited
max. junction temperature. (See fig.
Pulse width 300µs; duty cycle This applied I-PAK, D-PAK measured between
lead center contact
25V, starting 25°C, 790µH
11A. (See Figure 175°C
11A, di/dt 290A/µs, V(BR)DSS,
Uses IRLZ24N data test conditions.
www.irf.com
IRLR/U024NPbF
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
Drain-to-Source Current
Drain-to-Source Current
8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
2.5V
2.5V 20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 175°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
25°C
DS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
175°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
www.irf.com
IRLR/U024NPbF
Gate-to-Source Voltage
Capacitance (pF)
Ciss
1MHz SHORTED
Coss
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
Drain Current
175°C 25°C
10µs
100µs
25°C 175°C Single Pulse
10ms
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
www.irf.com
IRLR/U024NPbF
Drain Current
D.U.T.
-VDD
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
Maximum Drain Current Case Temperature
td(on) d(off)
10b. Switching Time Waveforms
Thermal Response thJC
0.50
0.20 0.10 0.05
0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Notes: Duty factor
0.01 0.00001
Peak thJC
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRLR/U024NPbF
Single Pulse Avalanche Energy (mJ)
BOTTOM
4.5A 7.8A
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature (°C)
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
www.irf.com
IRLR/U024NPbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFET® MOSFETs
www.irf.com
IRLR/U024NPbF
D-Pak (TO-252AA) Package Outline
Dimensions shown millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: IRFR120 EMBLY CODE 1234 EMBLED 1999 EMBLY LINE Note: sembly line ition indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120 916A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNATES LEAD-FREE PRODUCT (OPT IONAL) YEAR 1999 WEEK EMBLY CODE
www.irf.com
IRLR/U024NPbF
I-Pak (TO-251AA) Package Outline
Dimensions shown millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: IRFU120 EMBLY CODE 5678 EMBLED 1999 EMBLY LINE Note: assembly line position indicates "Lead-Free" ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
U120 919A
CODE YEAR 1999 WEEK LINE
ERNAT IONAL RECT IFIER LOGO EMBLY CODE PART NUMBER
IRFU120
CODE IGNAT LEAD-FREE PRODUCT (OPTIONAL) YEAR 1999 WEEK EMBLY CODE
www.irf.com
IRLR/U024NPbF
D-Pak (TO-252AA) Tape Reel Information
Dimensions shown millimeters (inches)
16.3 .641 15.7 .619
16.3 .641 15.7 .619
12.1 .476 11.9 .469
FEED DIRECTION
.318 .312
FEED DIRECTION
NOTES CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS INCHES OUTLINE CONFORMS EIA-481 EIA-541.
INCH
NOTES OUTLINE CONFORMS EIA-481.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.12/04
www.irf.com

IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET Logic-Level Gat

Top Searches for this datasheet

Other recent searches