IRF7413PbF Generation Technology Ultra On-Resistance N-Channel Mo

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IRF7413PbF Generation Technology Ultra On-Resistance N-Channel Mo

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95017A
IRF7413PbF
Generation Technology Ultra On-Resistance N-Channel Mosfet Surface Mount Available Tape Reel Dynamic dv/dt Rating Fast Switching 100% Tested Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) 0.011
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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques. Power dissipation greater than 0.8W possible typical mount application.
SO-8
Absolute Maximum Ratings
Symbol
25°C 70°C 25°C dv/dt TSTG
Parameter
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, Continuous Drain Current, Pulsed Drain Current
Units
mW/°C V/ns
Power Dissipation Linear Derating Factor Single Pulse Avalanche Energency Peak Diode Recovery dv/dt
0.02 +150
Junction Storage Temperature Range
Thermal Resistance Ratings
Symbol
Junction-to-Ambient
Junction-to-Drain Lead
Parameter
Units
°C/W
06/29/06
IRF7413PbF
Electrical Characteristics 25°C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
0.034 1800
Units
0.011 0.018 -100 7.3A
Conditions
250µA 10V, 7.3A 4.5V, 3.7A 10V, 3.7A 30V, 24V, 125°C -20V 7.3A 10V, Fig.
V/°C Reference 25°C,
VGS, 250µA
2.0, Fig. 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Symbol
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol showing integral reverse junction diode. 25°C, 7.3A, 25°C, 7.3A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited Starting 25°C, =9.8mH
max. junction temperature. fig.
7.3A, di/dt 100A/µs, V(BR)DSS, Pulse width 300µs; duty cycle Surface mounted FR-4 board measured approximately 90°C
150°C
=7.3A. (See Figure
IRF7413PbF
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 150°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
DS(on) Drain-to-Source Resistance (Normalized)
7.3A
Drain-to-Source Current
150°C 25°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRF7413PbF
3200 2800 2400 2000 1600 1200
Coss
Gate-to-Source Voltage
1MHz SHORTED Ciss
7.3A
Capacitance (pF)
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
150°C
Drain Current
25°C
100us
Single Pulse
10ms
Source-to-Drain Voltage
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRF7413PbF
D.U.T.
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
D.U.T.
td(on)
d(off)
Current Sampling Resistors
Gate Charge Test Circuit
10b. Switching Time Waveforms
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA
0.0001
0.001
0.01
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7413PbF
Single Pulse Avalanche Energy (mJ)
BOTTOM
3.3A 6.0A 7.3A
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
IRF7413PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
dv/dt controlled Driver same type D.U.T. controlled Duty Factor D.U.T. Device Under Test
Driver Gate Drive P.W. Period
P.W. Period VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
Logic Level Devices N-Channel HEXFETS
IRF7413PbF
SO-8 Package Outline
Dimensions shown millimeters (inches)
DI8C@T HDGGDH@U@ST
!!'#
IPU@T)
APPUQSDIU
SO-8 Part Marking
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;;
IRF7413PbF
SO-8 Tape Reel
Dimensions shown milimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice. This product been designed qualified Consumer market. Qualification Standards found IR's site.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 06/2006

IRF7413PbF Generation Technology Ultra On-Resistance N-Channel Mo

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