IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO

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IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO

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-95185
IRG4PC50UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast: Optimized high operating frequencies 8-40 hard switching, >200 resonant mode Generation IGBT design provides tighter parameter distribution higher efficiency than Generation IGBT co-packaged with HEXFREDultrafast, ultra-soft-recovery anti-parallel diodes bridge configurations Industry standard TO-247AC package Lead-Free
UltraFast CoPack IGBT
VCES 600V
VCE(on) typ. 1.65V
@VGE 15V,
n-ch
Benefits
Generation IGBT's offer highest efficiencies available IGBT's optimized specific application conditions HEXFRED diodes optimized performance with IGBT's Minimized recovery characteristics require less/no snubbing Designed "drop-in" replacement equivalent industry-standard Generation IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C 100°C 25°C 100°C TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, sec. Mounting Torque, 6-32 Screw.
Max.
+150 (0.063 (1.6mm) from case) (1.1
Units
Thermal Resistance
Parameter
Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
Typ.
-0.24 (0.21)
Max.
0.64 0.83
Units
°C/W
(oz)
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04/23/04
IRG4PC50UDPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 250µA V(BR)CES/TJ Temperature Coeff. Breakdown Voltage 0.60 V/°C 1.0mA Collector-to-Emitter Saturation Voltage 1.65 VCE(on) Fig. 27A, 150°C VGE(th) Gate Threshold Voltage VGE, 250µA VGE(th)/T Temperature Coeff. Threshold Voltage mV/°C VGE, 250µA Forward Transconductance 100V, ICES Zero Gate Voltage Collector Current 600V 6500 600V, 150°C Diode Forward Voltage Drop Fig. 25A, 150°C Gate-to-Emitter Leakage Current ±100 ±20V IGES V(BR)CES
Switching Characteristics 25°C (unless otherwise specified)
Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. -Diode Peak Reverse Recovery Current -Diode Reverse Recovery Charge -Diode Peak Rate Fall Recovery -During -Typ. 0.99 0.59 1.58 4000 Max. Units Conditions 400V Fig. 25°C 27A, 480V 15V, Energy losses include "tail" -diode reverse recovery. Fig. 150°C, Fig. 27A, 480V -VGE 15V, -Energy losses include "tail" diode reverse recovery. Measured from package -VGE Fig. 1.0MHz 25°C Fig. 125°C 25°C Fig. 125°C 200V 25°C Fig. 1200 125°C di/dt 200A/µs A/µs 25°C 125°C
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres di(rec)M
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IRG4PC50UDPbF
rive cifi sses inclu effe reve issipa tion rate
urre
Freq
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
ctor-to-E itter
1000
1000
ollec r-to-Em itte
r-to itte
itte
Fig. Typical Output Characteristics www.irf.com
Fig. Typical Transfer Characteristics
IRG4PC50UDPbF
ollec r-to-Em itter oltage
axim ollector urrent
perature (°C)
Fig. Maximum Collector Current Temperature
Case
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
thJC
Fig. Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case www.irf.com
IRG4PC50UDPbF
8000
Gate-to-Emitter Voltage
400V
Capacitance (pF)
6000
4000
2000
r-to itte
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
itching Loss
Total Switching Losses (mJ)
480V
480V
Junction Temperature (°C)
Fig. Typical Switching Losses Gate Resistance www.irf.com
Fig. Typical Switching Losses Junction Temperature
IRG4PC50UDPbF
Collector-to-E itter urrent
Total hing Loss
480V
1000
1000
r-to-E itte
Collecto r-to-E itter oltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
Fig. Maximum Forward Voltage Drop Instantaneous Forward Current www.irf.com
IRG4PC50UDPbF
125°C 25°C
(ns)
(A/µs)
1000
1000
Fig. Typical Reverse Recovery dif/dt
Fig. Typical Recovery Current dif/dt
1500
10000
1200
i(rec)M /µs)
1000
1000
/µs)
1000
Fig. Typical Stored Charge dif/dt www.irf.com
Fig. Typical di(rec)M/dt dif/dt
IRG4PC50UDPbF
+Vge Same device .U.T.
430µF
Eoff
Fig. Test Circuit Measurement ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), td(off),
Fig. Test Waveforms Circuit Fig. 18a, Defining
Eoff, td(off),
LTAG
OVERY ENER
Fig. Test Waveforms Circuit Fig. 18a,
Defining Eon, td(on),
Fig. Test Waveforms Circuit Fig. 18a,
Defining Erec, trr, Qrr,
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IRG4PC50UDPbF
Figure 18e. Macro Waveforms Figure 18a's Test Circuit
1000V 6000µ
D.U.T.
480V
480V @25°C
Figure Clamped Inductive Load Test Circuit
Figure Pulsed Collector Current Test Circuit
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IRG4PC50UDPbF
Notes:
Repetitive rating: 20V; pulse width limited maximum junction temperature (figure 80%(VCES), 20V, 10µH, (figure Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: IRFPE30 EMBLY CODE 5657 EMBLED 2000 EMBLY LINE
Note: assembly line position indicates "Lead-Free"
ERNAT IONAL RECT IFIER LOGO EMBLY CODE
PART NUMBER
IRFPE30
035H
CODE YEAR 2000 WEEK LINE
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/04
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IRG4PC50UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO

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