IRG4PC40WPbF INSULATED GATE BIPOLAR TRANSISTOR Designed expr
|
|
|
Top Searches for this datasheet
-95183
IRG4PC40WPbF
INSULATED GATE BIPOLAR TRANSISTOR
Designed expressly Switch-Mode Power Supply (power factor correction) applications Industry-benchmark switching losses improve efficiency power supply topologies reduction Eoff parameter IGBT conduction losses Latest-generation IGBT design constructionoffers tighter parameters distribution, exceptional reliability Lead-Free
VCES 600V
VCE(on) typ. 2.05V
@VGE 15V,
n-channel
Benefits
Lower switching losses allow more cost-effective operation than power MOSFETs ("hard switched" mode) particular benefit single-ended converters boost topologies 150W higher conduction losses minimal minority-carrier recombination make these excellent option resonant mode switching well >>300 kHz)
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 screw.
TO-247AC
Max.
(0.063 (1.6mm) from case
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 (0.21)
Max.
0.77
Units
°C/W (oz)
www.irf.com
04/23/04
IRG4PC40WPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage 0.44 2.05 Collector-to-Emitter Saturation Voltage 2.36 VCE(ON) 1.90 VGE(th) Gate Threshold Voltage VGE(th)/TJ Temperature Coeff. Threshold Voltage Forward Transconductance ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions 250µA 1.0A V/°C 1.0mA Fig.2, 150°C VGE, 250µA mV/°C VGE, 250µA =20A 600V 10V, 25°C 2500 600V, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.11 0.23 0.34 0.85 1900 Max. Units Conditions 400V Fig.8 25°C 20A, 480V 15V, Energy losses include "tail" Fig. 9,10, 0.45 150°C, 20A, 480V 15V, Energy losses include "tail" Fig.10,11, Measured from package Fig. 1.0MHz
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig.
80%(VCES), 20V, 10µH,
(See fig. 13a)
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited maximum
junction temperature.
www.irf.com
IRG4PC40WPbF
Tria
Load Current
ifie
1000
Frequency
Fig. Typical Load Current Frequency
(Load Current IRMS fundamental)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
80µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics
Fig. Typical Transfer Characteristics
www.irf.com
IRG4PC40WPbF
Collector-to-Emitter Voltage(V)
WIDTH PULSE
Maximum Collector Current(A)
Case Temperature
Junction Temperature
Fig. Maximum Collector Current Case Temperature
Fig. Typical Collector-to-Emitter Voltage Junction Temperature
Thermal Response thJC
0.50
0.20 0.10 0.05 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: Duty factor Peak thJC
Rectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
IRG4PC40WPbF
4000
VGE, Gate-to-Emitter Voltage
Capacitance (pF)
3000
1MHz Cies SHORTED Cres Coes
400V
Cies
2000
1000
Collector-to-Emitter Voltage
Total Gate Charge (nC)
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
480V
10Ohm 480V
Gate Resistance (Ohm)
Junction Temperature
Fig. Typical Switching Losses Gate www.irf.com Resistance
Fig. Typical Switching Losses Junction Temperature
IRG4PC40WPbF
SAFE OPERATING AREA
Collector-to-Emitter Current
Total Switching Losses (mJ)
10Ohm 480V
1000
Collector-to-emitter Current
1000
Collector-to-Emitter Voltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
www.irf.com
IRG4PC40WPbF
480V
480V IC@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Fig. Switching Loss
Test Circuit
Driver same type D.U.T., 480V
Fig. Switching Loss
Waveforms
t=5µ
www.irf.com
IRG4PC40WPbF
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
XAMPLE IRFPE30 CODE 5657 2000 LINE
Note: assembly line position indicates "Lead-Free"
RNAT IONAL IFIE LOGO CODE
PART NUMB
035H
CODE 2000 LINE
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 04/04
www.irf.com
Other recent searches
TX-702 - TX-702 TX-702 Datasheet
PCA8565A - PCA8565A PCA8565A Datasheet
LC503TBL-50P-A - LC503TBL-50P-A LC503TBL-50P-A Datasheet
FA09X - FA09X FA09X Datasheet
EE-SX1041 - EE-SX1041 EE-SX1041 Datasheet
DFN2020-6 - DFN2020-6 DFN2020-6 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
