IRG4PC40SPbF INSULATED GATE BIPOLAR TRANSISTOR Standard: Opt
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IRG4PC40SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Standard: Optimized minimum saturation voltage operating frequencies 1kHz) Generation IGBT design provides tighter parameter distribution higher efficiency than Generation Industry standard TO-247AC package Lead-Free
Standard Speed IGBT
VCES 600V
VCE(on) typ. 1.32V
@VGE 15V,
n-channel
Benefits
Generation IGBT's offer highest efficiency available IGBT's optimized specified application conditions Designed "drop-in" replacement equivalent industry-standard Generation IGBT's
Absolute Maximum Ratings
Parameter
VCES 25°C 100°C EARV 25°C 100°C TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Soldering Temperature, seconds Mounting torque, 6-32 screw.
TO-247AC
Max.
(0.063 (1.6mm from case
Units
Thermal Resistance
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
0.24 (0.21)
Max.
0.77
Units
°C/W (oz)
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04/23/04
IRG4PC40SPbF
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. Breakdown Voltage 0.75 1.32 VCE(ON) Collector-to-Emitter Saturation Voltage 1.68 1.32 VGE(th) Gate Threshold Voltage VGE(th)/TJ Temperature Coeff. Threshold Voltage -9.3 Forward Transconductance ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS Max. Units Conditions 250µA 1.0A V/°C 1.0mA Fig.2, 150°C VGE, 250µA mV/°C VGE, 250µA 100V, 600V 10V, 25°C 1000 600V, 150°C ±100 ±20V
Switching Characteristics 25°C (unless otherwise specified)
td(on) td(off) Eoff td(on) td(off) Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate Emitter Charge (turn-on) Gate Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 0.45 6.95 1000 2200 Max. Units Conditions 400V Fig. 25°C 31A, 480V 15V, Energy losses include "tail" Fig. 150°C, 31A, 480V 15V, Energy losses include "tail" Fig. Measured from package Fig. 1.0MHz
Repetitive rating; 20V, pulse width limited
max. junction temperature. fig.
Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot.
80%(VCES), 20V, 10µH,
(See fig. 13a)
Repetitive rating; pulse width limited maximum
junction temperature.
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IRG4PC40SPbF
rian ular
Load urrent
ifie atio
rated
rate ltage
Fig. Typical Load Current Frequency
(For square wave, I=IRMS fundamental; triangular wave, I=IPK)
1000
1000
Collector-to-Emitter Current
Collector-to-Emitter Current
150°C
25°C 150°C
25°C
20µs PULSE WIDTH
PULSE WIDTH
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Fig. Typical Output Characteristics www.irf.com
Fig. Typical Transfer Characteristics
IRG4PC40SPbF
ollec r-to itte oltage
Maximum Collector Current
Case Temperature (°C)
Fig. Maximum Collector Current Case Temperature
Fig. Collector-to-Emitter Voltage Junction Temperature
Therm Response
ectangular Pulse Duration (sec)
Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com
IRG4PC40SPbF
4000
itter oltage
cita
3000
2000
1000
ollector-to-Em itter ltag
Total
Fig. Typical Capacitance Collector-to-Emitter Voltage
Fig. Typical Gate Charge Gate-to-Emitter Voltage
itching
otal hing
480V
esistan
nctio erature
Fig. Typical Switching Losses Gate Resistance www.irf.com
Fig. Typical Switching Losses Junction Temperature
IRG4PC40SPbF
ollecto r-to itter rrent
Total Switching Losses (mJ)
150°C 480V
1000
1000
Collector-to-Emitter Current
Collecto r-to-E itter oltage
Fig. Typical Switching Losses Collector-to-Emitter Current
Fig. Turn-Off
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IRG4PC40SPbF
480V
480V IC@25°C
480µF 960V
Driver .T.; Note: upply, pulse idth inductor obta
Fig. Clamped Inductive
Load Test Circuit
Fig. Pulsed Collector
Current Test Circuit
river* 1000V
Fig. Switching Loss
Test Circuit
Driver same type D.U.T., 480V
Fig. Switching Loss
Waveforms
t=5µ
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IRG4PC40SPbF
TO-247AC Package Outline
Dimensions shown millimeters (inches)
TO-247AC Part Marking Information
XAMPLE CODE 5657 2000 LINE
Note: assembly line position indicates "Lead-Free"
RNAT IONAL CODE
PART NUMB
035H
CODE 2000
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. Data specifications subject change without notice. 04/04
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