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MEMORY STORAGE SECTION DRAM DDR2 SDRAM SDRAM SDRAM RDRAM NETWORK


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Memory Storage
MEMORY STORAGE
SECTION DRAM DDR2 SDRAM SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, FLASH NAND FLASH ORDERING INFORMATION SRAM LOW-POWER SRAM LOW-VOLTAGE LOW-POWER SRAM MICRO-POWER LOW-VOLTAGE SRAM HIGH DENSITY, POWER (UtRAM) HIGH-SPEED ASYNCHRONOUS FAST SRAM SRAM NTRAM LATE-WRITE SRAM DDR1 SRAM QDR1 SRAM DDR2 SRAM QDR2 SRAM SRAM ORDERING INFORMATION MULTI-CHIP PACKAGE NAND/DRAM NOR/SRAM NOR/UtRAM OneNAND/DRAM NOR/DRAM NOR/OneNAND/UtRAM STORAGE OPTICAL MEDIA SOLUTIONS HARD DISK DRIVES PAGE
4a-5a 5a-7a 9a-11a
15a-16a 16a-17a 17a-18a 20a-21a
DDR2 SDRAM
MEMORY STORAGE
Section
DDR2 DRAM COMPONENTS
Density 256Mb 256Mb 512Mb 512Mb 512Mb
NOTES: DDR2 -400 (3-3-3)
DDR2 -533 (4-4-4)
Speed (Mbps) 400/533 400/533 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667
DDR2 (5-5-5)
Part Number K4T56043QF-Z(CCC/CD5) K4T56083QF-Z(CCC/CD5) K4T51043QC-Z(CCC/CD5/CE6) K4T51083QC-Z(CCC/CD5/CE6) K4T51163QC-Z(CCC/CD5/CE6) K4T1G044QA-Z(CCC/CD5/CE6) K4T1G084QA-Z(CCC/CD5/CE6)
Voltage: 1.8V
DDR2 SDRAM DIMM MODULES: UNBUFFERED
Density 256MB 256MB 512MB 512MB 512MB
NOTES: 400Mbps
32Mx64 32Mx64 64Mx64 64Mx64 64Mx64 128Mx64 128Mx64 256Mx64
533Mbps
Speed (Mbps) 400/533 400/533/667 400/533 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667
667Mbps
Part Number M378T3253FZ0-(CCC/CD5) M378T3354CZ0-(CCC/CD5/CE6) M378T6453FZ0-(CCC/CD5) M378T6553CZ0-(CCC/CD5/CE6) M378T6464AZ0-(CCC/CD5/CE6) M378T2863AZ0-(CCC/CD5/CE6) M378T2953CZ0-(CCC/CD5CE6) M378T5663AZ0-(CCC/CD5CE6)
Voltage: 1.8V
Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free
Components 256Mb 512Mb 256Mb 512Mb 512Mb
Package: FBGA (11x13mm)
DDR2 SDRAM DIMM MODULES: REGISTERED
Density 256MB 512MB 512MB 512MB
NOTES: 400Mbps
32Mx72 64Mx72 64Mx72 64Mx72 128Mx72 128Mx72 128Mx72 256Mx72 256Mx72 256Mx72
533Mbps
Speed (Mbps) 400/533 400/533 400/533 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667
667Mbps
Part Number M393T3253FZ0-(CCC/CD5) M393T6450FZ0-(CCC/CD5) M393T6453FZ0-(CCC/CD5) M393T6553CZ0-(CCC/CD5/CE6) M393T2950CZ0-(CCC/CD5/CE6) M393T2953CZ0-(CCC/CD5/CE6) M393T2863AZ0-(CCC/CD5/CE6) M393T5750CZ0-(CCC/CD5/CE6) M393T5660AZ0-(CCC/CD5/CE6) M393T5663AZ0-(CCC/CD5/CE6)
Voltage: 1.8V
Package Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free Lead-free
Components 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb
Package: FBGA (11x13mm)
DDR2 DRAM SODIMM MODULES
Density 256MB 512MB 512MB
NOTES: 400Mbps Height(in): 1.25
32Mx64 64Mx64 64Mx64 128Mx64 128Mx64
533Mbps
Speed (Mbps) 400/533/667 400/533/667 400/533/667 400/533/667 400/533/667
667Mbps
Part Number M470T3354CZ0-(CCC/CD5/CE6) M470T6554CZ0-(CCC/CD5/CE6) M470T6464AZ0-(CCC/CD5/CE6) M470T2953CS0-(CCC/CD5/CE6) M470T2864AZ0-(CCC/CD5/CE6)
Voltage: 1.8V
Components 512Mb 512Mb 512Mb
Package: FBGA (11x13mm)
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
SDRAM
SDRAM COMPONENTS
Density 256M 256M 256M 256M 256M 256M 512M 512M 512M 512M 512M 512M 512M
NOTES:
64Mx4 64Mx4 32Mx8 32Mx8 16Mx16 16Mx16 128Mx4 128Mx4 64Mx8 64Mx8 64Mx8 32Mx16 32Mx16 256Mx4 128Mx8
DDR266 (133MHz CL=2.5)
Speed (Mbps) 266/333/400 333/400 266/333/400 333/400 266/333/400 333/400 266/333/400 266/333/400 266/333/400 266/333/400 266/333/400 333/400 333/400 266/333 266/333
DDR266 (133MHz Cl=2)
Part Number K4H560438E-TC(L)B0/B3/CCC K4H560438E-GC(L)B3/CCC K4H560838E-TC(L)B0/B3/CCC K4H560838E-GC(L)B3/CCC K4H561638F-TC(L)B0/B3/CCC K4H561638F-GC(L)B3/CCC K4H510438C-UC(L)B0/B3/CCC K4H510438C-ZC(L)B0/B3/CCC K4H510838C-UC(L)B0/B3/CCC K4H510838C-VC(L)B0/B3/CCC K4H510838C-ZC(L)B0/B3/CCC K4H511638C-UC(L)B3/CCC K4H511638C-ZC(L)B3/CCC K4H1G0438M-TC(L)B0/B3 K4H1G0838M-TC(L)B0/B3
DDR333 (166MHz CL=2.5)
Package TSOP ball FBGA TSOP ball FBGA TSOP ball FBGA TSOP ball FBGA TSOP Shrink TSOP ball FBGA TSOP ball FBGA TSOP TSOP
Notes Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free Pb-free Pb-free Pb-free Pb-free Pb-free
DDR400 (200MHz CL=3)
SDRAM DIMM MODULES: UNBUFFERED
Density 256MB 256MB 256MB 256MB 256MB 512MB 512MB 512MB 512MB 512MB 512MB 512MB
NOTES:
32Mx64 32Mx64 32Mx64 32Mx72 32Mx72 64Mx64 64Mx64 64Mx64 64Mx72 64Mx72 64MX64 64Mx72 128Mx64 128Mx72 256Mx64 256Mx72
DDR266 (133MHz CL=2.5) Type: 184-pin
Speed (Mbps) 266/333 333/400 266/333/400 333/400 266/333 333/400 266/333/400 333/400 266/333/400 266/333/400 266/333/400 266/333/400 266/333 266/333
DDR266 (133MHz Cl=2) Package: TSOP components
Composition (32M 8)*8 (32M 8)*8 (32M 8)*8 (32M 8)*9 (32M 8)*9 (32M 8)*16 (32M 8)*16 (32M 8)*16 (32M 8)*18 (32M 8)*18 (64M (64M 8)*9 (64M 8)*16 (64M 8)*18 (128M 8)*16 (128M 8)*18
Part Number M368L3223ETN CB0/B3 M368L3223E- CCC00 M368L3223FTN- CB3/CCC M381L3223E- CB0/B3/CCC M381L3223FTM- CB3/CCC M368L6423ETN- CB0/B3 M368L6423E- CCC00 M368L6423FTN- CB3/CCC M381L6423E- CB0/B3/CCC M381L6423FTM- CB3/CCC M368L6523CUS- CB0/B3/CCC M381L6523CUM CB0/B3/CCC M368L2923CUN- CB0/B3/CCC M381L2923CUM CB0/B3/CCC M368L5623MTN CB0/B3 M381L5623M- CB0/B3
Notes Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free available Pb-free Pb-free Pb-free Pb-free
DDR333 (166MHz CL=2.5) Voltage: 2.5V
DDR400 (200MHz CL=3)
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
SDRAM
MEMORY STORAGE
Section
SDRAM DIMM MODULES: REGISTERED
Density 256MB 256MB 512MB 512MB 512MB 512MB 512MB
NOTES:
32Mx72 32Mx72 64Mx72 64Mx72 64Mx72 64Mx72 64Mx72 128Mx72 256Mx72 256Mx72 512Mx72
DDR266 (133MHz CL=2.5) Type: 184-pin
Speed (Mbps) 333/400 333/400 333/400 333/400 333/400 333/400 266/333
Composition (32Mx8)*9 (32Mx8)*9 (32Mx8)*18 (32Mx8)*18 (64Mx4)*18 (64Mx8)*9 (64Mx8)*9 (128Mx4)*18 (St. 256Mx4)*18 (128Mx4)*36 (St. 512Mx4)*18
Part Number M312L3223ETS -C(L)B0 M312L3223EG0 C(L)/B3/CCC M312L6423ETS C(L)B0 M312L6423EG0 C(L)B3/CCC M312L6420EG0- C(L)B3/CCC M312L6523CUS M312L6523CZ0 B3/CCC M312L2920CZ0 B3/CCC M312L5628CU0 M312L5720CZ0 B3/CCC M312L5128MT0 CB0/B3
DDR333 (166MHz CL=2.5)
Component Package TSOP FBGA TSOP FBGA FBGA TSOP FBGA FBGA TSOP FBGA TSOP
Banks Module
Notes
Pb-free Pb-free Pb-free Pb-free Pb-free
DDR266 (133MHz Cl=2)
DDR400 (200MHz CL=3)
DRAM SODIMM MODULES
Density 128MB 256MB 512MB
NOTES:
16Mx64 32Mx6 32Mx64 64Mx64
DDR266 (133MHz CL=2.5) Type: 200-pin, Double Sided
Speed (Mbps)
Composition (16M 16)*4 (16M 16)*8 (32M 16)*4 (64M 8)*16
Part Number M470L1624FT0 C(L)B3 M470L3224FT0 C(L)B3 M470L3224CU0 C(L)B3 M470L2923BN0 C(L)B3
DDR333 (166MHz CL=2.5)
Component Package TSOP TSOP TSOP Shrink TSOP
Banks Module
Notes
Pb-free
DDR266 (133MHz Cl=2) Height(in): 1.25
DDR400 (200MHz CL=3)
SDRAM COMPONENTS
Density 16Mb 64Mb 64Mb 64Mb 64Mb 128Mb 128Mb 128Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb
NOTES:
1Mx16 16Mx4 8Mx8 4Mx16 2Mx32 32Mx4 16Mx8 8Mx16 64Mx4 32Mx8 16Mx16 128Mx4 64Mx8 128Mx4 64Mx8 32Mx16 256Mx4
Speed (Mbps) 125/143/166/183 133/143 133/143 133/143/166 143/166/183/209 133/166 133/166
Part Number K4S161622H-TC(L)(80/70/60/55) K4S640432H-TC(L)(75/70)000 K4S640832H-TC(L)(75/70)000 K4S641632H-TC(L)(75/70/60)000 K4S280432F-TC(L)(75)000 K4S280832F-TC(L)(75)000 K4S281632F-TC(L)(75/60)000 K4S560432E-TC(L)(75)000 K4S560832E-TC(L)(75)000 K4S561632E-TC(L)(75/60)000 K4S510632C-TC(L)(75)000 K4S510732C-TC(L)(75)000 K4S510432B-TC(L)(75)000 K4S510832B-TC(L)(75)000 K4S511632B-TC(L)(75)000 K4S1G0632B-TC(L)(75)000
Refresh
TSOP
Comments Banks
stacked stacked
stacked
"1H" part number signifies Intel PC100 SDRAM spec compliant device latency "1L" part number signifies Intel 100MHz SDRAM spec compliant device latency
"7C" part number signifies Intel 133MHz SDRAM spec compliant device latency Commercial Temp., Power Banks: Package: TSOP Voltage: 3.3V Speed: PC133 (133MHz CL=3/PC100 CL2)
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
SDRAM
SDRAM DIMM MODULES PC133 COMPLIANT: UNBUFFERED
Density 128MB 128MB 128MB 128MB 256MB 256MB 256MB 256MB 256MB 256MB 512MB 512MB
NOTES: Type: 168-pin
16Mx64 16Mx64 16Mx72 16Mx72 32Mx64 32Mx64 32Mx64 32Mx64 32Mx72 32Mx72 64Mx64 64Mx72 128Mx64 128Mx72
Package: TSOP components
Speed (Mbps) PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133
Voltage: 3.3V
Composition 128M: (16Mx8)*8 256M: (16Mx16)*4 128M: (16Mx8)*9 256M: (16Mx16)*5 128M: (16Mx8)*16 256M: (32Mx8)*8 256M: (16Mx16)*8 256M: (32Mx8)*8 128M: (16Mx8)*18 256M: (32Mx8)*9 256M: (32Mx8)*16 256M: (32Mx8)*18 512M: (64Mx8)*16 512M: (64Mx8)*18
Part Number M366S1723FTS-C7A00 M366S1654ETS-C7A00 M374S1723FTS-C7A00 M374S1654ETS- C7A00 M366S3323FTS- C7A00 M366S3253ETS-C7A00 M366S3254ETS-C7A00 M366S3253ETS-C7A00 M374S3323FTS-C7A00 M374S3253ETS-C7A00 M366S6453ETS-C7A00 M37456453ETS-C7A00 M366S2953BTS-C7A00 M374S2953BTS-C7A00
Banks Module
SDRAM DIMM MODULES PC133 COMPLIANT: REGISTERED
Density 128MB 256MB 256MB 512MB 512MB 16Mx72 32Mx72 32Mx72 64Mx72 64Mx72 128Mx72 128Mx72 256Mx72 Speed (Mbps) PC133 PC133 PC133 PC133 PC133 PC133 PC133 PC133
Package: TSOP components
Composition (16Mx8)*9 (32Mx4)*18 (32Mx8)*9 (64Mx4)*18 (32Mx8)*18 (St.128Mx4)*18 (128Mx4)*18 (St.256Mx4)*18
Voltage: 3.3V
Part Number M390S1723FT1-C7A00 M390S3320FT1-C7A00 M390S3253ET1-C7A00 M390S6450ET1-C7A00 M390S6453BT1-C7A00 M390S2858ET1-C7A00 M390S2950BT1-C7A00 M390S5658BT1-C7A00
Banks Module
Refresh
Comments
stacked stacked; avail Q204
NOTES: Type: 168-pin, double sided
SDRAM DIMM MODULES PC133 PC100 COMPLIANT: REGISTERED
LOW-PROFILE DIMMs (1.2 HEIGHT)
Density 128MB 256MB 256MB 512MB 16Mx72 32Mx72 32Mx72 64Mx72 128Mx72 128Mx72 256Mx72 Speed PC133 PC133 PC133 PC133 PC133 PC133 PC133
Type: 168-pin, double sided
Composition (16x8)*9 (32Mx4)*18 (32Mx8)*9 (64Mx4)*18 (St.128Mx4)*18 (128Mx4)*18 (St.128Mx4)*18
Part Number M390S1723FTU C7A00 M390S3320FTU C7A00 M390S3253ETU C7A00 M390S6450ETU C7A00 M390S2858ETU C7A00 M390S2950BTU C7A00 M390S5658BTU C7A00
Voltage: 3.3V
Banks Module Refresh
Comments
stacked stacked, avail Q204
NOTES: Stacked components
Package: TSOP Components
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
SDRAM
MEMORY STORAGE
Section
SDRAM SODIMM MODULES
Density 64MB 128MB 256MB 256MB 512MB 512MB 8Mx64 16Mx64 32Mx64 32Mx64 64Mx64 64Mx64 Speed PC133 PC133 PC133 PC133 PC133 PC133
Commercial Temp., Power
Composition (8Mx16)*4 (8Mx16)*8 (16Mx16)*8 (32Mx16)*4 (32Mx16)*8 (64Mx8)*16
Interface: SSTL-2
Part Number M464S0924FTS-L7A00 M464S1724FTS-L7A00 M464S3254ETS-L7A00 M464S3354BTS-C(L)7A M464S6554BTS-C(L)7A M464S6453EN0-C75/L7500
Banks: Latency:
Height (in) 1.15 1.15 1.25 1.25 1.18 1.25
Banks Module
NOTES: Double-Sided
Refresh: 8K/32ms
RDRAM COMPONENTS
Density 5576M 288M 256M 128M
NOTES: Voltage:
Speed (Mbps) 1066 800/1066 800/1066 800/1066
Part Number K4R761869A-GCT9 K4R881869E-GCM8/T9 K4R571669E-GCM8/T9 K4R271669F-SCK8/S8
Refresh 32K/32ms 16K/32ms 16K/32ms 16K/32ms
Package 92ball FBGA 92ball FBGA 92ball FBGA 54ball FBGA
RIMMMODULES
Density 128MB 256MB 512MB 128MB NON-ECC 256MB NON-ECC 512MB NON-ECC 144MB NexMod 288MB NexMod 576MB NexMod Speed (Mbps) 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps 800/1066Mbps Devices Part Number MR18R1624EG0-CM8/T9 MR18R1628EG0-CM8/T9 MR18R162GEG0-CM8/T9 MR16R1624EG0-CM8/T9 MR16R1628EG0-CM8/T9 MR16R162GEG0-CM8/T9 MN18R1624EF0-CT9 MN18R1628EF0-CT9 MN18R3268AEF0-CT9 Component 288Mb 288Mb 288Mb 256Mb 256Mb 512Mb 288Mb 288Mb 576Mb Comments lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only lead-free only
NETWORK DRAM
Density 288Mb 288Mb 288Mb 256Mb 256Mb
NOTES: Interface: SSTL-2 Banks: Refresh: 8K/32ms Latency:
32Mx9 16Mx18 8Mx36 32x8 16x16
Speed (Mbps) 500/600/667 500/600/667 500/600/667
Part Number K4C89093AF-ACF5/FB/F6 K4C89183AF-ACF5/FB/F6 K4C89363AF-GCF5/FB/F6 K4C560838F-TCD4 K4C561638F-TCD4
Package ball ball ball 66-pin TSOP 66-pin TSOP
Comments
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
Mobile SDRAM/Graphics SDRAM
MOBILE SDRAM COMPONENTS
Density 64Mb 64Mb 64Mb 64Mb 64Mb 128Mb 128Mb 128Mb 128Mb 128Mb 256Mb 256Mb 256Mb 256Mb 256Mb 256Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 512Mb 4Mx16 4Mx16 4Mx16 2MX32 2MX32 8MX16 8MX16 8MX16 4MX32 4MX32 16Mx16 16Mx16 16Mx16 8Mx32 8Mx32 8Mx32 32Mx16 32Mx16 32Mx16 32Mx16 32Mx16 16Mx32 16Mx32 16Mx32 Part Number K4S641633H-(1)(2)(3)(4) K4S64163LH-(1)(2)(3)(4) K4M64163PH-(1)(2)(3)(4) K4S643233H-(1)(2)(3)(4) K4S64323LH-(1)(2)(3)(4) K4M281633F-(1)(2)(3)(4) K4M28163LF-(1)(2)(3)(4) K4M28163PF-(1)(2)(3)(4) K4S283233F-(1)(2)(3)(4) K4S28323LF-(1)(2)(3)(4) K4S561633F-(1)(2)(3)(4) K4S56163LF-(1)(2)(3)(4) K4S56163PF-(1)(2)(3)(4) K4S563233F-(1)(2)(3)(4) K4S56323LF-(1)(2)(3)(4) K4S56323PF-(1)(2)(3)(4) K4S511533F-(1)(2)(3)(4) K4S51153LF-(1)(2)(3)(4) K4S511633F-(1)(2)(3)(4) K4S51163LF-(1)(2)(3)(4) K4S51163PF-(1)(2)(3)(4) K4S513233F-(1)(2)(3)(4) K4S51323LF-(1)(2)(3)(4) K4S51323PF-(1)(2)(3)(4)
90balls FBGA Monolithic (11mm 13mm) Smaller 90balls FBGA Mono 54balls 90balls FBGA Temp Power: Commercial(-25 70'C), Normal Commercial, Commercial, Low, PASR TCSR Commercial, Super Commercial, Super Low, PASR TCSR Extended(-25~85'C), Normal Extended, Extended, Low, PASR TCSR Extended, Super Extended, Super Low, PASR TCSR Industrial(-40~85'C), Normal
Refresh
Industrial, Industrial, Low, PASR TCSR Industrial, Super Industrial, Super Low, PASR TCSR Speed: Mobile-SDRAM 166MHz, 133MHz,
Power 3.0V 2.5V 1.8V 3.0V 2.5V 3.0V 2.5V 1.8V 3.0V 2.5V 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V 3.0V 2.5V 3.0V 2.5V 1.8V 3.0V 2.5V 1.8V
Pins TSOP/BGA FBGA-54balls FBGA-54balls FBGA-54balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-90balls FBGA-90balls 54Balls 54Balls FBGA-54balls FBGA-90balls FBGA-90balls FBGA-90balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-54balls FBGA-90balls FBGA-90balls FBGA-54balls
125MHz, 105MHz, 105MHz, 66MHz, Mobile-DDR 133MHz, 100MHz, 66MHz,
NOTES: Package: Leaded/Lead Free 52balls FBGA Mono 54balls FBGA Mono 54balls Mono 60(72)balls FBGA Mono 0.5pitch 60balls FBGA Mono 0.8pitch
GRAPHICS SDRAM COMPONENTS
Type GDDR3 Density 512Mb 256Mb 256Mb 256Mb 16Mx32 8Mx32 16Mx16 8Mx32 8Mx32 16Mx16 Part Number K4J52324Q K4J55323Q K4N56163Q K4D553235 K4D553238 K4D551638 Package FBGA FBGA FBGA FBGA FBGA TSOPII VDD/VDDQ 1.8/1.8V 2.0/2.0V 2.0/2.0V 1.8/1.8V 1.8/1.8V 2.0/2.0V 2.5/2.5V 2.5/2.5V 0.1V ~2.9V 1.8/1.8V 2.5/2.5V 2.5/2.5V 2.5/2.5V 2.55/2.55V Speed (MHz) 500/600 700/800 500/600/700/800 266/333/400/450 300/350 300/350/400/450 200/250 300/350/400 300/350 200/250/275/300 200Mhz Remarks
1.8V GL20
GDDR2 GDDR1
128Mb
4Mx32
8Mx16
K4D26323Q K4D263238 K4D263238 K4D261638 K4D261638F-TC5A
FBGA FBGA TQFP TSOPII
CL-tRCD-tRP 3-4-4 CL-tRCD-tRP 3-3-3
NOTES:
clock cycle time
1.25ns (800MHz) 1.429ns (700MHz) 1.667ns (600MHz) (500MHz)
products banks
(450MHz) (400MHz) 2.86 (350MHz) (300MHZ) (275MHz) (266MHz) (250MHz) (200MHz)
Part Suffix Description
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
DRAM Ordering Information
MEMORY STORAGE
Section
DRAM ORDERING INFORMATION
Memory DRAM:4 Small Classification A:Advanced Dram Technology B:DDR3 SDRAM Network-DRAM SGRAM SDRAM GDDR3 SDRAM Mobile SDRAM Mobile L2RAM Mobile SDRAM SGRAM Direct RDRAM SDRAM SDRAM GDDR4 SDRAM Mobile SDRAM Mobile SDRAM DRAM Value Added DRAM PEA: Power Efficient Address 4~5. Density, Refresh 111: 64K/16ms 16M, 1K/16ms 16M, 2K/32ms 16M, 4K/64ms 128M, 4K/32ms 128M, 16K/32ms 128M, 4K/64ms 32M, 2K/32ms 512/8ms 1K/16ms 144M, 16K/32ms 512M, 32K/16ms 512M, 8K/64ms 512M, 8K/32ms 256M, 16K/16ms 256M, 4K/32ms 256M, 8K/64ms 256M, 16K/32ms 256M, 8K/32ms 64M, 2K/16ms 64M, 4K/64ms 64M, 8K/64ms 768M, 8K/64ms 72M, 8K/32ms 576M, 32K/32ms 2K/32ms 288M, 16K/32ms 288M, 8K/32ms 8K/64ms 8K/64ms 8K/64ms 128M, 4K/64ms with TCSR 256M, 8K/64ms with TCSR 64M, 4K/64ms with TCSR 6~7. Organization (2CS) (Including SSTL-2, 2.8V, 2.8V SSTL-2, 2.2V, 1.8V DRSL, 1.8V, 1.2V SSTL(LP), 2.5V, 2.5V Generation Generation Generation Generation Generation Generation Generation Generation Generation Generation 10th Generation 11th Generation 12th Generation Partial DRAM(2nd) Partial DRAM (for RAMOSTAK Product) (2CS) Package Advanced DRAM Technology WBGA TSOP2 BOC(LF) 2Bank 16Bank 4Bank 32Bank SDRAM TSOP2-400(LF, DDP) TSOP2-400(DDP) BOC, WBGA BOC(DDP) STSOP2 POP(DDP) SDRAM BOC(Smaller) DDR3 SDRAM SGRAM FBGA(LF, DDP) FBGA(DDP) FBGA(LLDDP) FBGA(1DQS,LF) TSOP2-400(LF) TQFP FBGA FBGA(LF) FBGA(1DQS) TSOP2-400 TQFP(LF) BOC(LF) BOC(LF) BOC(Smaller, TSOP2-400 TSOP2-400(LF) BOC(LF) STSOP2(LF) POP(LF, DDP) TSOP2-400F(LF)
Stack (Flexframe) Stack (Flexframe) (2CS) Bank 1Bank 8Bank (Including (2CS, 2CKE)
Stack (70-mono)
Interface,VDD,VDDQ NONE, NONE, NONE TTL, 5.0V, 5.0V LVTTL, 3.3V, 3.3V LVTTL, 3.0V, 3.0V LVTTL, 2.5V, 2.5V SSTL(LP), 1.8V, 1.8V SSTL, 1.5V, 1.5V SSTL-2, 3.3V, 2.5V SSTL-2, 2.5V, 2.5V RSL, 2.5V, 2.5V SSTL, 2.5V, 1.8V SSTL-2 DLL, 3.3V, 2.5V LVTTL, 3.0V, 1.8V LVTTL, 2.5V, 1.8V LVTTL, 1.8V, 1.5V LVTTL, 1.5V, 1.5V LVTTL, 1.8V, 1.8V SSTL, 1.8V, 1.8V
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
DRAM Ordering Information
DRAM ORDERING INFORMATION
SGRAM FBGA, GDDR3 SDRAM 136-FBGA, FBGA, Direct RDRAM WBGA WBGA(LF, 320) µBGA® packages1) (M)2) µBGA® packages 54-WBGA 54-WBGA(LF) SOJ-400 TSOP2-400(LF) TSOP2-300(LF) SOJ-400 TSOP2-300(LF) TSOP2-400(LF) MCP(LF) 90-FBGA(DDP,LF) 96-FBGA(LF) 54-CSP(LF) WBGA(LF) FBGA(LF, MCP) MWBGA 54-µBGA® packages SOJ-300 STSOP2 TSOP2-400 TSOP2-300 SOJ-300 TSOP2-300 STSOP2 TSOP2-400 Mobile SDRAM 90-FBGA(DDP) 96-FBGA 54-CSP WBGA FBGA(MCP) Smaller FBGA Smaller FBGA(LF) 54-CSP(DDP) TSOP2-400 90-FBGA Mobile SDRAM Smaller 90-FBGA Smaller 90-FBGA(LF) 90-FBGA 90-FBGA(LF) Temp, Power COMMON (Temp, Power) NONE, NONE Automotive, Normal Commercial, Normal Commercial, Medium Commercial, Commercial, Low, PASR TCSR Commercial, Super Commercial, Super Low, PASR TCSR Commercial, Reduced 54-CSP(LF, DDP) 90-FBGA(LF) WBGA(LF)3) MWBGA(LF) 136-FBGA, BOC(LF) FBGA, BOC(LF) (LF) Mobile SDRAM 96-FBGA 90-FBGA WBGA(LF, 0.8MM) WBGA(0.8MM) WBGA(LF) Mobile SDRAM MONO(LF) 90-FBGA(LF) 60-FBGA POP(DDP) Network-DRAM 60-BOC TSOP2 DRAM BOC(LF) SDRAM 90-FBGA(DDP, 96-FBGA(LF) CSP(except Pin) 54-CSP(LF) 90-FBGA (LF, MCP) 90-FBGA(MCP) Smaller 90FBGA(LF) STSOP2 TSOP2-400 54-CSP(DDP) DRAM COMMON CHIP (M): Mirror (LF): Lead Free WAFER 90-FBGA(DDP) 96-FBGA 52-CSP(LF) 54-CSP 90-FBGA(LF) 90-FBGA Smaller 90FBGA TSOP2-400(DDP) STSOP2(LF) TSOP2-400(LF) 54-CSP(LF, DDP) BOC(LF) 60-BOC(LF) BOC(LF) TSOP2(LF) 14~15. Speed (Wafer/Chip Biz/BGD: SDRAM 10ns@CL2 7.5ns@CL2 :7.5ns@CL2,TRCD2,TRP2 7.5ns@CL2.5 5ns@CL2.5 5ns@CL3 5.5ns@CL3 5ns@CL3,TRCD3,TRP3 5ns@CL4 10ns@CL1.5 <Only SDRAM code> BIN(TPB) Uniq. SDRAM 5ns@CL3 5ns@CL3,TRCD3,TRP3 3.75ns@CL3(1.9V) 5ns@CL4 3.0ns@CL4 3ns@CL4(1.9V) Daisychain Sample 3.75ns@CL5 2.5ns@CL5 2.5ns@CL6 DDR3 SDRAM 2.5ns@CL5 2.5ns@CL6 3.0ns@CL6 5ns@CL5 3.0ns@CL5 3.0ns@CL6 3.75ns@CL4 2.5ns@CL4 3.75ns@CL3 4ns@CL3 Daisychain 5ns@CL3, TRCD3, TRPS3(2.5V) 6ns@CL2.5 6ns@CL3 3.75ns@CL3 90-FBGA 60-FBGA(LF) POP(LF, DDP) MCP(LF) 96-FBGA(LF) 90-FBGA(LF) WBGA TSOP2 POP(LF, DDP) Extended, Normal Extended, Extended, Low, PASR TCSR Extended, Super Extended, Super Low, PASR TCSR Extra Extend, Normal Industrial, Normal Industrial, Industrial, Low, PASR TCSR Industrial, Super Industrial, Super Low, PASR TCSR WAFER,CHIP Level Classification NONE, NONE test only test, several test,
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
DRAM Ordering Information
MEMORY STORAGE
Section
DRAM ORDERING INFORMATION
(tRAC) 40ns 50ns Direct RDRAM (tCC, tRAC) 300MHz, 53.3ns consumer 400MHz, 45ns consumer 533MHz, 32ns consumer 300MHz(3.3ns), 53.3ns 356MHz(2.8ns), 45ns 400MHz(2.5ns), 45ns 400MHz(2.5ns), 40ns 533MHz(1.9ns), 35ns 600MHz(1.667ns), 32ns 533MHz(1.9ns), 32ns 667Mhz(1.5ns), 31ns 800Mhz(1.25ns), 27ns 400MHz, 45ns 533MHz(1.9ns), 35ns 533MHz(1.9ns), 32ns, tDAC Daisychain Sample (Short channel) Mobile SDRAM 15ns@CL2 10ns@CL3 8ns@CL3 9.0ns@CL3(12ns@CL2) 9.5ns@CL3(12ns@CL2) Daisychain (PCB) Daisychain Sample Daisychain (Sanyo PCB) Mobile SDRAM 10ns@CL3 7.5ns@CL3 9.0ns@CL3(12ns@CL2) Mobile SDRAM 15ns@CL3 7.5ns@CL3 9ns@CL3 Daisychain (PCB) Daisychain Daisychain (Sanyo PCB) 10ns@CL3 6ns@CL3 6ns@CL3 10ns@CL2 7.5ns@CL3 45ns 60ns Mobile SDRAM 7.5ns@CL3 9ns@CL3 Mobile L2RAM 100Mhz, 166Mhz, SDRAM (tCC: Default CL3) 10ns, PC66 15ns 10ns@CL2, PC100 3.3ns 4.5ns 5.5ns 7.5ns, PC133 7.5ns PC133, CL3, TRCD2, TRP2 7.5ns PC133, CL2, TRCD2, TRP2 9.6ns Daisychain (PCB) Daisychain (Sanyo PCB) Only SDRAM Code 7.0ns 6.0ns 8.0ns 2.0ns 2.2ns(450MHz) 3.5ns 3.32ns(301MHz) 4.5ns 5.5ns 2.94ns(340MHz) 5ns@CL3(TRCD3, TRP3) Only SDRAM Code> 4.0ns SGRAM 1.25ns 1.5ns (667MHz) 1.818ns 2.86ns(350MHz) 2.2ns 3.0ns 3.75ns 1.429ns 1.667ns 1.996ns 2.5ns 3.3ns
NOTES: µgBGA® packages registered trademarks Tessera. (M): Mirror (LF): Lead Free
GDDR3 SDRAM 6ns@CL3 1.1ns 1.429ns 1.667ns 133Mhz, 2.0ns 2.5ns 3.3ns 12ns 10ns, PC100 5.6ns 6.7ns 7.4ns 4.0ns 2.86ns GDDR4 SDRAM 1.5ns(667MHz) Network-DRAM 6ns@CL4 5.5ns@CL4 3ns@CL6 2.5ns@CL7 DRAM 2.4Gbps, 36ns, 16Cycles 3.2Gbps, 27ns, 16Cycles Daisychain 3.2Gbps, 35ns, 20Cycles 4.0Gbps, 28ns, 20Cycles 3.2Gbps, 35ns, 24Cycles 5.5ns 7.5ns 5.6ns 2.1ns(475MHz) 2.5ns 3.3ns 3.6ns 2.86ns(350MHz) 2.66ns(375MHz) Type Packing Type Marking (Number) 4.0Gbps, 28ns, 24Cycles Daisychain Sample DRAM COMMON NONE Packing Type digit) Common products, except Mask Divided into TAPE REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) 5ns@CL4 4ns@CL6 3.33ns@CL6 1.25ns 1.5ns(667MHz) 1.818ns 2.2ns 3.0ns 3.6ns 1.0ns
3.0ns@CL6(6tCK tRC@CL4)
SGRAM (tCC: Default CL3)
Component TAPE REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE REEL MODULE Other Packing
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
Flash
NAND FLASH DISCRETE COMPONENTS
Density 128Mb 256Mb 512Mb
NOTE:
Part Number K9F2808U0C-PCB K9F5608U0C-PCB K9F1208U0B-PCB K9F1G08U0A-PCB K9F2G08U0M-PCB K9K4G08U0M-PCB K9W8G08U1M-PCB
parts lead free
Organization 16Mx8 32Mx8 64Mx8 128Mx8 256Mx8 512Mx8 1024Mx8
Speed (ns)
Voltage 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V
Package TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48 TSOP48
OneNANDFLASH
Density 128Mb Part Number KFG2816Q1M-PEB0000 KFG2816D1M-PEB0000 KFG2816U1M-PIB0000 KFG5616Q1M-PEB0000 KFG5616D1M-PEB0000 KFG5616U1M-PIB0000 KFG5616Q1M-DEB0000 KFG5616D1M-DEB0000 KFG5616U1M-DIB0000 KFG1216Q2M-DEB0000 KFG1216D2M-DEB0000 KFG1216U2M-DIB0000 KFG1G16Q2M-DEB0000 KFG1G16D2M-DEB0000 KFG1G16U2M-DIB0000 Package TSOP free> TSOP free> FBGA free> FBGA free> FBGA free> Organization Voltage(V) 1.8v 2.7v 3.3v 1.8v 2.7v 3.3v 1.8v 2.7v 3.3v 1.8v 2.7v 3.3v 1.8v 2.7v 3.3v Temperature Extended Extended Industrial Extended Extended Industrial Extended Extended Industrial Extended Extended Industrial Extended Extended Industrial
256Mb
512Mb
FLASH
Density 16Mb 32Mb 64Mb
NOTE:
TSOP Part Number K8D1716UTC-PI07 K801716UBC-PI07 K8D3216UTC-PI07 K8D3216UBC-PI07 K8D6316UTM-PI07 K8D6316UBM-PI07
parts lead free
FBGA Part Number K8D1716UTC-FI07 K8D1716UBC-FI07
Block Architecture Bottom Bottom Bottom
Voltage 3.3V 3.3V 3.3V 3.3V 3.3V 3.3V
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
NAND Flash Ordering Information
MEMORY STORAGE
Section
NAND FLASH ORDERING INFORMATION
Memory NAND Flash: Small Classification (SLC: Single Level Cell, MLC: Multi Level Cell, SmartMedia, S/B: Small Block) Muxed Chip Muxed Chip Single Dual 4CHIP SINGLE (S/B) DUAL (S/B) 4DIE STACK (S/B) Normal Normal 2-Die Stack 4-Die Stack Non-Muxed OneNAND STACK STACK 4~5. Density 512M 128M NONE 6~7. Organization NONE 256M 5.0V(4.5V~5.5V) 2.65V(2.4V~2.9V) 2.3V~3.6V 1.8V(1.7V~1.95V) 2.4V~3.0V 2.7V~3.6V 3.3V(3.0V~3.6V) 2.7V~5.5V,3.0V~5.5V NONE Mode Normal Dual Dual Rn/B Quad Single Mask Option Generation Generation Generation Generation Generation Generation Partial NAND(2nd) Partial NAND(1st) Generation Generation Generation Generation Generation Partial NAND(2nd) Partial NAND(1st) Package CHIP TSOP1(LF,1217) FBGA FBGA(LF) TSOP1(LF) TSOP2-R TSOP2 WAFER TBGA 63-TBGA WSOP1(LF) TBGA(LF) TSOP1(1217) tLGA TSOP2(LF) SMARTMEDIA WSOP TSOP1 Temp Commercial NONE Block Include Block Daisychain Sample Block Ini. Good, Add. Blocks Good Block NONE NAND-Reserved Reserved Packing Type digit) Common products, except Mask Divided into TAPE REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type Marking (Number) Industrial
Component TAPE REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE REEL MODULE Other Packing
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
SRAM
LOW-POWER (5V) SRAM
Density 8Mbit 4Mbit 1Mbit 256K Part Number K6X8008C2B K6X8016C3B K6X4016C3F K6X4008C1F K6T1008C2E K6X1008C2D K6T0808C1D K6X0808C1D Organization 1Mx8 512x16 256x16 512x8 128x8 128x8 32x8 32x8 Speed(ns) 55,70 55,70 55,70 55,70 55,70 55,70 55,70 55,70 Operating Temp Operating Current (mA) Standby Current (uA) 20,30 20,30 15,25 Package TSOP2(44) TSOP2(44) TSOP2(44) 32SOP,TSOP 32DIP,32SOP,TSOP1(32) 32SOP,TSOP1(32) 28SOP,TSOP1(28) 28SOP Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
NOTE: Lead-free available upon request
LOW-VOLTAGE LOW-POWER SRAM
Density 8Mbit 4Mbit 1Mbit Part Number K6X8008T2B K6X8016T3B K6X4008T1F K6X4016T3F K6F1008U2C K6X1008T2D K6F1008V2C Organization 1024Kx8 512Kx16 512x8 256x16 128x8 128x8 128x8 Speed (ns) 55,70 55,70 70,85 70,85 55,70 70,85 55,70 Operating Temp Operating Current (mA) Standby Current (uA) 20,30 20,30 10,20 Package TSOP2(44) TSOP2(44) 32SOP,TSOP2(32) TSOP2(44) 32TSOP1 32SOP,TSOP2(32) 25SOP1 Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
MICRO-POWER LOW-VOLTAGE SRAM
Density 16Mbit 8Mbit 4Mbit Part Number K6F1616U6C K6F1616R6C K6F8016R6B K6F8016U6B K6F4008R2G K6F4008U2G K6F4016R4E K6F4016R6G K6F4016U4G K6F4016U6G K6F2016U4E K6F2016R4E K6F2008U2E K6F2008V2E K6F1016U4C Organization 1x16 1x16 512x16 512x16 512Kx8 512Kx8 256Kx16 256Kx16 256Kx16 256Kx16 128x16 128x16 256x8 256x8 64x16 1.65 1.65 1.65 2.20 1.65 2.20 1.65 2.20 1.65 Speed (ns) 55,70 70,85 55,70 70,85 45,55,70 70,85 55,70 55,70 55,70 70,85 55,70 55,70 55,70 Operating Temp Operating Current (mA) Standby Current (uA) Package 48-FBGA 48-FBGA 48-TBGA 48-TBGA 36TBGA 36TBGA 48TBGA 48TBGA 48TBGA 48TBGA 48-TBGA 48-FBGA 32TSOP1 32TSOP1 48-FBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
2Mbit
1Mbit
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
SRAM
MEMORY STORAGE
Section
UtRAM (HIGH DENSITY POWER)
Density 32Mbit Part Number K1S321615M K1S321611C K1S321615A K1S161615M K1S1616B1M Organization 2Mx16 2Mx17 2Mx16 1Mx16 1Mx16 Speed (ns) Operating Temp Operating Current (mA) Standby Current (uA) Package 48-TBGA 48-FBGA 48-TBGA 48-TBGA 48-TBGA Production Status Mass Production Mass Production Mass Production Mass Production
16Mbit
HIGH-SPEED (4Mbit) ASYNCHRONOUS FAST SRAM
Density 4Mbit Part Number 4K6R4016C1D K6R4016V1D K6R4004C1D K6R4004V1D K6R4008C1D K6R4008V1D K6R3024V1D K6R1008V1D K6R1008C1D K6R1004V1D K6R1004C1D K6R1016V1D K6R1016C1D Organization 256Kx16 256Kx16 1Mx4 1Mx4 512Kx8 512Kx8 128x24 128x8 128x8 256x4 256x4 64x16 64x16 Speed (ns) Operating Temp C,L,I,P C,I,P Operating Current (mA) 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 170,150,130 Standby Current (uA) 5(1.2) 40,15 20,5 20,5 20,5 20,5 20,5 20,5 Package 44SOJ, 44TSOP2, 48TBGA 44SOJ, 44TSOP2, 48TBGA SOJ, TSOP2 SOJ, TSOP2 119PBGA 32SOJ,32TSOP2 32SOJ,32TSOP2 32SOJ 32SOJ 44SOJ,44TSOP2,48TBGA 44SOJ,44TSOP2,48TBGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
3Mbit 1Mbit
(36Mbit) SRAM
Part Number K7A323600M K7A321800M K7B323625M K7B321825M Organization 1Mx36 2Mx18 1Mx36 2Mx18 Operating Mode Access Time tCD(ns) 2.6, 3.1, 2.6, 3.1, 6.5, 6.5, Speed tCYC (MHz) 250, 200, 250, 200, 133, 118, 133, 118, Voltage 3.3, 3.3, 3.3, 3.3, Package 100TQFP 100TQFP 100TQFP 100TQFP Production Status Mass Production Mass Production Mass Production Mass Production Comments 2E1D 2E1D
NOTES: 2E1D 2-cycle Enable 1-cycle Disable
(18Mbit) SRAM
Part Number K7A163600A K7A163601A K7A161800A K7A161801A K7B163625A K7B161825A K7A163630B K7A163631B K7A161830B K7A161831B K7B163635B K7B161835B Organization 512Kx36 512Kx36 1Mx18 1Mx18 512Kx36 1Mx18 512Kx36 512Kx36 1Mx18 1Mx18 512Kx36 1Mx18 Operating Mode 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, Access Time (ns) 2.6, 3.5, 3.1, 2.6, 3.5, 3.1, 7.5, 7.5, 2.6, 2.6, Speed tCYC (MHz) 250, 167, 200, 250, 167, 200, 118, 118, 250, 250, Voltage 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, Package 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP Production Status 2H`05 2H`05 2H`05 2H`05 2H`05 2H`05 Mass Production 4Q`05 Mass Production 4Q`05 Mass Production 4Q`05 Mass Production 4Q`05 Mass Production 4Q`05 Mass Production 4Q`05 Comments 2E1D 2E2D 2E1D 2E2D 2E1D 2E2D 2E1D 2E2D
NOTES: 2E1D 2-cycle Enable 1-cycle Disable
2E2D 2-cycle Enable 2-cycle Disable
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
SRAM
(8Mbit) SRAM
Part Number K7A803600B K7A803609B K7A801800B K7A801809B K7B803625B K7B801825B Organization 256x36 256x36 512x18 512x18 256x36 512x18 Operating Mode Access Time tCD(ns) 3.5,3.8 3.5,3.8 6.5,7.5 6.5,7.5 Speed tCYC (MHz) 167,138 167,138 133,117 133,117 Voltage 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 Package 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Comments 2E1D 2E1D 2E1D 2E1D
NOTES: 2E1D 2-cycle Enable 1-cycle Disable 2E2D 2-cycle Enable 2-cycle Disable
Recommended speed options 250MHz 167MHz. Recommended access speed option 6.5ns.
(4Mbit) SRAM
Part Number K7A403600B K7A401800B K7A403609B K7A401809B K7A403200B K7B403625B K7B401825B Organization 128Kx36 256Kx18 128Kx36 256Kx18 128Kx32 128Kx36 256Kx18 Operating Mode Access Time tCD(ns) 3.5, 3.5, 2.4, 2.4, 3.5, 6.5, 6.5, Speed tCYC (MHz) 167, 167, 250, 250, 167, 133, 133, Voltage 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, Package TQFP TQFP TQFP TQFP TQFP TQFP TQFP Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Comments 2E1D 2E1D 2E1D 2E1D 2E1D
NOTES: 2E1D 2-cycle Enable 1-cycle Disable 2E2D 2-cycle Enable 2-cycle Disable
Recommended speed options 250MHz 167MHz. Recommended access speed option 6.5ns.
(2Mbit) SRAM
Part Number Organization K7A203600B 64Kx36 K7A203200B 64Kx32 Operating Mode Access Time tCD(ns) Speed tCYC (MHz) Voltage Package 2.5, TQFP 2.5, TQFP
2E2D 2-cycle Enable 2-cycle Disable
Production Status Mass Production Mass Production
Comments 2E1D 2E1D
NOTES: 2E1D 2-cycle Enable 1-cycle Disable
(36Mbit) NTRAM
Part Organization Number K7N323645M 1Mx36 K7N321845M 2Mx18 K7N323601M 1Mx36 K7N321801M 2Mx18 K7M323625M 1Mx36 K7M321825M 2Mx18 Operating Mode Access Time tCD(ns) 2.6, 3.2,3.5,4.2 2.6, 3.2,3.5,4.2 2.6, 3.2,3.5,4.2 2.6, 3.2,3.5,4.2 Speed tCYC (MHz) 250, 200,167, 250, 200,167, 250, 200,167, 250, 200,167, Voltage 3.3, 3.3, 3.3, 3.3, Package 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
NOTES: Recommended speed options 250MHz, 200MHz 167MHz.
Recommended access speed option 7.5ns.
(18Mbit) NTRAM
Part Number K7N161801A K7N163601A K7N163645A K7N161845A K7M161825A K7M163625A K7N161831B K7N163631B K7M161835B K7M163635B Organization 1Mx18 512Kx36 512Kx36 1Mx18 1Mx18 512Kx36 1Mx18 512Kx36 1Mx18 512Kx36 Operating Mode FT(SB) FT(SB) FT(SB) FT(SB) 3.3, 3.3, Access Time tCD(ns) 2.6, 3.2, 3.5, 2.6, 3.2, 3.5, 2.6, 3.2, 3.5, 2.6, 3.2, 3.5, 6.5, 6.5, 2.6, 3.2, 2.6, 3.2, Speed tCYC (MHz) 250, 200, 167, 250, 200, 167, 250, 200, 167, 250, 200, 167, 133, 133, 250, 200, 250, 200, Voltage 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, 3.3, Package 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP 100TQFP, 165FBGA 100TQFP, 165FBGA 100TQFP 100TQFP Production Status 2H`05 2H`05 2H`05 2H`05 2H`05 2H`05 Mass Production Q4`05 Mass Production Q4`05 Mass Production Q4`05 Mass Production Q4`05
NOTE: B-version samples available now.
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
SRAM
MEMORY STORAGE
Section
(8Mbit) NtRAM
Part Number K7N803601B K7N801801B K7N803609B K7N801809B K7N803645B K7N801845B K7N803649B K7N801849B K7M801825B K7M803625B Organization 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 256Kx36 512Kx18 512Kx18 256Kx36 Operating Mode Access Time tCD(ns) 3.5, 3.5, 3.5, 3.5, 6.5,7.5 6.5,7.5 Speed tCYC (MHz) 167,133 167,133 167,133 167,133 133,117 133,117 Voltage 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 3.3, 3.3, Package 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP 100TQFP Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
(4Mbit) NtRAM
Part Number K7N403601B K7N401801B K7N403609B K7N401809B Organization 128Kx36 256Kx18 128Kx36 256Kx18 Operating Mode Access Time tCD(ns) 3.5, 3.5, 2.6, 2.6, Speed tCYC (MHz) 167,133 167,133 250,200 250,200 Voltage 3.3,2.5 3.3,2.5 3.3,2.5 3.3,2.5 Package TQFP TQFP TQFP TQFP Production Status Mass Production Mass Production Mass Production Mass Production
LATE-WRITE (18Mbit) SRAM
Part Number K7P161866A K7P163666A Organization 1Mx18 512Kx36 Operating Mode Access Time tCD(ns) Speed tCYC (MHz) 300,250 Voltage (Max 1.9) (Max.1.9) Package 119BGA 119BGA Production Status Mass Production Mass Production
LATE-WRITE (8Mbit) SRAM
Part Number K7P801811B K7P801866B K7P803611B K7P803666B K7P801822B K7P803622B Organization 512Kx18 512Kx18 256Kx36 256Kx36 512Kx18 256Kx36 Operating Mode Access Time tCD(ns) 1.5,1.6,2.0 1.5,1.6,2.0 1.5,1.6,2.0 1.5, 1.6, 1.5, 1.6, 3.3,2.5,2.0 Speed tCYC (MHz) 333,300,250 333,300.25 333,300,250 333, 300,250 333, 300,250 250,200,166 Voltage (Max.2.0) (Max.2.0) (Max.2.0) (Max 2.0) 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA 119BGA 119BGA 119BGA Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
LATE-WRITE &R-L (4Mbit) SRAM
Part Number K7P401822B K7P401823B K7P403622B Organization 256Kx18 256Kx18 128Kx36 Operating Mode Access Time tCD(ns) 2.5,2.7,3.0 2.5,2.7,3.0 Speed tCYC (MHz) 250,200,167 250,200,167 Voltage 2.5/3.3 2.5/3.3 2.5/3.3 Package 119BGA 119BGA 119BGA Production Status Mass Production Mass Production Mass Production
DDR1 (18Mbit) SRAM
Part Number K7D161874B K7D163674B Organization 1Mx18 512Kx36 1.8~2.5 1.8~2.5 Access Time (ns) Cycle Time (MHz) 330/300 330/300 Voltage Package 153BGA 153BGA Production Status Samples Samples
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
SRAM
DDR1 (8Mbit) SRAM
Part Number K7D803671B K7D801871B Organization 256Kx36 512Kx18 Access Time (ns) 1.7/1.9/2.1 1.7/1.9/2.1 Cycle Time (MHz) 333/330/250 333/330/250 Voltage 1.5(Max 2.0) 1.5(Max 2.0) Package 153BGA 153BGA Production Status Mass Production Mass Production
DDR1 (16Mbit) CIO/SIO SRAM
Part Number K7I161882B K7I161884B K7J161882B K7J163682B K7I163682B K7I163684B
NOTES: Burst
Organization 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36
Access Time (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50
Cycle Time (MHz) 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167
Voltage 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Production Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments CIO-2B CIO-4B SIO-2B SIO-2B CIO-2B CIO-4B
Burst
Separate
Common
QDR1,2 (16Mbit) SRAM
Part Number K7R160982B K7R161882B K7R161884B K7Q161852A K7Q161854A K7Q161882A K7Q161884A K7Q161862B K7Q161864B K7R163682B K7R163684B K7Q163652A K7Q163654A K7Q163682A K7Q163684A K7Q163662B K7Q163664B
NOTES: Burst
Organization 2Mx9 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 1Mx18 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36 512Kx36
1.8v 2.5v 1.8v 2.5v 1.8v 2.5v 1.8v 2.5v
Access Time (ns) 0.45,0.50 0.45,0.50 0.45,0.45,0.50 2.5,3.0 2.5,3.0 2.7,3.0 2.5,3.0 0.45,0.50 0.45,0.45,0.50 2.5,3.0 2.5,3.0 2.7,3.0 2.5,3.0
Cycle Time (MHz) 200,167 200,167 250,200,167 167,133 167,133 167,133 167,133 200,167 250,200,167 167,133 167,133 167,133 167,133
Voltage 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 169FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Production Status Mass Production Mass Production Mass Production 3Q`05 3Q`05 3Q`05 3Q`05 Mass Production Mass Production Mass Production Mass Production 3Q`05 3Q`05 3Q`05 3Q`05 Mass Production Mass Production
Comments
Burst
Accept A-version (Last-time chance July) July
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
SRAM
MEMORY STORAGE
Section
DDR2 CIO/SIO (36Mbit) SRAM
Part Number K7I321882M K7I321884M K7J321882M K7I323682M K7I323684M K7J323682M
NOTES: Burst
Organization 2Mx18 2Mx18 2Mx18 1Mx36 1Mx36 1Mx36
Access Time (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.50
Cycle Time (MHz) 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167 250,200,167
Voltage 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Production Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Status Mass Production Mass Production Mass Production Mass Production Mass Production Mass Production
Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B
Burst
Separate
Common
(36Mbit) SRAM
Part Number K7R320982M K7R321882M K7R321884M K7R323682M K7R323684M
NOTES: Burst
Organization 4Mx9 2Mx18 2Mx18 1Mx36 1Mx36
Access Time (ns) 0.45,0.50 0.45,0.50 0.45,0.45,0.50 0.45,0.50 0.45,0.45,0.50
Cycle Time (MHz) 200,167 200,167 250,200,167 200,167 250,200,167
Voltage 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Production Status Mass Production Mass Production Mass Production Mass Production Mass Production
Comments II-2B II-2B II-4B II-2B II-4B
Burst
DDR2 CIO/SIO (72Mbit) SRAM
Part Number K7I641882M K7I641884M K7J641882M K7I643682M K7I643684M K7J643682M
NOTES: Burst
Organization 4Mx18 4Mx18 4Mx18 2Mx36 2Mx36 2Mx36
Access Time (ns) 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.45,0.50
Cycle Time (MHz) 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167 300,250,200,167
Voltage 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Production Status Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05
Common
Comments CIO-2B CIO-4B SIO-2B CIO-2B CIO-4B SIO-2B
Burst
Separate
(72Mbit) SRAM
Part Number K7R640982M K7R641882M K7R641884M K7R643682M K7R643684M
NOTES:
Organization 8Mx9 4Mx18 4Mx18 2Mx36 2Mx36
Access Time (ns) 0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50 0.45,0.45,0.50 0.45,0.45,0.45,0.50
Burst
Cycle Time (MHz) 250,200,167 250,200,167 300,250,200,167 250,200,167 300,250,200,167
Voltage 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8 1.5,1.8
Package 165FBGA 165FBGA 165FBGA 165FBGA 165FBGA
Production Status Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05 Mass Production Q2`05
Comments II-2B II-2B II-4B II-2B II-4B
Burst
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
SRAM Ordering Information
ASYNCHRONOUS SRAM ORDERING INFORMATION
Memory Async SRAM: Small Classification Corner Vcc/Vss Fast SRAM fCMOS Cell LPSRAM High Speed(LPSRAM) High Voltage(LPSRAM) BICMOS Poly Load Cell LPSRAM Center Vcc/Vss Fast SRAM Cell LPSRAM 4~5. Density 6~7. Organization 1.5V 3.0V/VDDQ 1.8V 1.65V~2.2V 2.5V 2.7V~3.6V 3.3V 2.2V~3.3V Mode Active CS1, Dual Chip Select Signal Single Chip Select with /LB,/UB(tOE) Single Chip Select with /LB,/UB(tCS) Dual Chip Select with /LB,/UB(tOE) Dual Chip Select with /LB,/UB(tCS) I/Os Control with /BYTE CDMA Function Multiplexed Address Mirror Chip Option Chip Speed COMMON (Temp,Power) Automotive,Normal Commercial,Low Commercial,Normal Extended,Low Extended,Normal Industrial,Low Industrial,Normal Commercial,Low Military,Normal Extended,Low Industrial,Low Automotive,Low Industrial,Super Extended,Super Commercial,Ultra Super NONE,NONE WAFER, CHIP Level Division NONE,NONE sort DC,selected sort Cold/Hot DC,selected sort 5.0V Exception 1MFSRAM B-ver 32-SOJ-300 28-SOJ-300 512K/1M/2M/4M LPSRAM 32-TSOP1-0813.4F 32-TSOP1-0813.4 32-TSOP1-0813.4R LPSRAM 32-TSOP2-400F 32-TSOP2-400R 256K 512K Generation Generation Generation Generation Generation Generation Package TBGA(LF) CHIP TBGA TSOP1-0813.4F(LF) TSOP1-0820F(LF) TSOP2-400R(LF) TSOP WAFER SOP(LF) FBGA SOJ(LF) Generation Generation Generation Generation 14~15. Speed (tAA) fCMOS Cell LPSRAM Poly Load Cell LPSRAM Cell LPSRAM 100ns 120ns 150ns 25ns(only fCMOS Cell) 300ns 35ns(except Poly Load Cell) 45ns(except fCMOS Cell) 55ns 60ns(only fCMOS Cell) 70ns 85ns 90ns(only fCMOS Cell) Daisychain Sample High Speed (LPSRAM) 20ns 25ns High Voltage (LPSRAM) 55ns 70ns 85ns Corner Vcc/Vss Fast SRAM 10ns 12ns 13ns 15ns 17ns 20ns 25ns 30ns 35ns :45ns BICMOS Center Vcc/Vss Fast SRAM 10ns 12ns 13ns 15ns 17ns 20ns 25ns 30ns(only Center Vcc/Vss Fast SRAM) 35ns(only Center Vcc/Vss Fast SRAM) 7.2ns(only BICMOS) 8.6ns(only BICMOS) Daisychain Sample Async SRAM COMMON NONE (Containing Wafer, CHIP BIZ, Exception code) Packing Type digit) Common products, except Mask Divided into TAPE REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type Marking (Number)
TSOP-R TSOP2-400(LF) UBGA
3.0V
Component TAPE REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE REEL MODULE Other Packing
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
SRAM Ordering Information
MEMORY STORAGE
Section
SRAM ORDERING INFORMATION
Memory Sync SRAM: Small Classification Sync Pipelined Burst Sync Burst Custom Product Double Data Rate Double Data Rate 3-Clk Align Double Data Rate I-Common Double Data Rate II-Common Double Data Rate-Separate Late Select Sync Burst NtRAM Sync Pipelined Burst NtRAM Sync Pipe Quad Data Rate Quad Data Rate CSRAM 4~5. Density 6~7. Organization 8~9. Vcc, Interface, Mode 3.3V,LVTTL,2E1D WIDE 3.3V,LVTTL,2E2D WIDE 3.3V,LVTTL,2E2D SPEED 3.3V,LVTTL,Hi SPEED 3.3V,HSTL,R-R 3.3V,HSTL,R-L 3.3V,HSTL,R-R Fixed 3.3V,LVTTL,R-R 3.3V,LVTTL,R-L 3.3V,LVTTL,SB-FT WIDE 1.8/2.5/3.3V,LVTTL,2E1D 1.8/2.5/3.3V,LVTTL,2E2D 1.8/2.5/3.3V,LVTTL,SB-FT 2.5V,LVTTL,2E1D x144 144M Generation Generation Generation Generation Generation Generation TEMPORARY CODE Package BGA,FCBGA,PBGA BGA,FCBGA,PBGA(LF) FBGA (L)QFP CHIP WAFER Temp, Power COMMON (Temp,Power) NONE,NONE (Containing Error handling code) Automotive,Normal Commercial,Low Commercial,Normal Extended,Normal Industrial,Normal WAFER, CHIP Level Division NONE,NONE 2.5V,LVTTL,2E2D 2.5V,LVTTL,Hi SPEED 2.5V,1.5/1.8V,HSTL,Burst2 2.5V,1.5/1.8V,HSTL,Burst4 2.5V/1.8V,HSTL,Burst2 2.5V/1.8V,HSTL,Burst4 2.5V,HSTL,R-R 2.5V,HSTL,4-1-1-1 2.5V,HSTL,3-1-1-1 1.5V,1.8V,HSTL,All 1.8V,2.5V,HSTL,All 1.8V,LVCMOS,2E1D 1.8V,HSTL,Burst2 1.8V,HSTL,Burst4 1.8V,LVCMOS,2E2D,Hi SPEED 1.8V,HSTL,R-R 1.5V,HSTL,All 1.0V,HSTL,All 14~15. Speed Sync Burst,Sync Burst NtRAM Mode >(Clock Accesss Time) 10ns(Sync Burst, Sync Burst NtRAM) 3.8ns 4.3ns 4.8ns 5ns(Only Sync Pipe) 5.5ns 6.5ns 6.7ns 7.5ns 8.5ns Other Small Classification (Clock Cycle Time) 100MHz 117MHz 133MHz 138MHz 150MHz 166MHz 175MHz 143MHz 200MHz(2.0ns) 250MHz 250MHz(1.75ns) 300MHz 183MHz 200MHz 225MHz 275MHz 333MHz
350MHz 366MHz(t-CYCLE) 375MHz 400MHz(t-CYCLE) 425MHz 450MHz 500MHz(except Sync Pipe) 600MHz 650Mhz(Only CSRAM) 750MHz Packing Type digit) Common products, except Mask Divided into TAPE REEL(In Mask ROM, divided into TRAY, AMMO Packing Separately) Type Packing Type Marking (Number)
Component TAPE REEL Other (Tray, Tube, Jar) Stack Component TRAY (Mask ROM) AMMO PACKING Module MODULE TAPE REEL MODULE Other Packing
sort
selected sort
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
MCPs
MCP: NAND/DRAM
DENSITY INFORMATION Family Part Size Type
K5D5629CCM-F(D)095000 K5D5729CCM-F095000 K5D5629ACB-D090(T)000 K5D5729CCA-F(D)095000 ND256256 K5D5657ACM-F095T00 K5D5657ACA-D090000 K5D5657DCM-F095000 K5D5757ACM-D090000 K5D5658ACM-D090000 K5D5658ECM-D075000 K5E5658HCM-D060000 NDD256256256 KAL00B00CM-DG22000 KAL00B00CA-DG22000 KAL00Q00CM-DG55000 KAL00B00EM-DG55000 NND565656 KAG00E007M-FGG2000 KAG00J007M-F(D)GG2000 KAG00H008M-FGG2000 KAG00U00GM-FGG5000 KAG00J00HM-FGG5000 ND512256 K5D1257ACM-D090000 K5D1257DCM-D090000 K5D1258ACM-D090T00 NNDD256256256256 KBE00M005M-D411000 KBE00D004M-D411(3)000 KBE00L007M-D415T00 NDD512256256 KAL00R00KM-DG55000 NND512512256 KAG00K007M-FGG2000 KAG00K007A-DGG5000 KAG00L008M-FGG2000(3) ND1G256 K5D1G58KCM-F(D)090000 NNDD512512256256 KBE00F003M-F(D)411000 KBE00F003A-D411000 KBE00J006M-F411000 KBE00F005M-F411000 KBE00G005M-D411000 NDD1G256256 KAL00T00KM-DG55T00 KAL00Z00LM-DA55000 ND1G512 K5D1G13ACM-D090000 NNDD1G1G256256 KBE00S003M-D411000 KBE00S005M-D411000 KBE00H005M-F411000
ND256128
10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.2 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 11.5x13x1.2 10.5x13x1.4 10.5x13x1.4 10.5x13x1.4 11.5x13x1.2 10.5x16x1.4 10.5x13x1.4 10.5x16x1.4 14x14x1.1(POP) 10.5x16x1.4 10.5x13x1.4 10.5x16x1.4 10.5x16x1.4 10.5x13x1.4 11.5x13x1.2 11.5x13x1.4 14x14x1.15(POP) 12x14x1.4 11.5x13x1.4
107FBGA 107FBGA 107FBGA 127FBGA 107FBGA 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 107FBGA 107FBGA 107FBGA 107FBGA 107FBGA 137FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 137FBGA 137FBGA 107FBGA 107FBGA 107FBGA 119FBGA 107FBGA 107FBGA 107FBGA 137FBGA 137FBGA 137FBGA 137FBGA 152FBGA 107FBGA 137FBGA 137FBGA
NOTES: N=NAND D=DRAM sales product details
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
MCPs
MEMORY STORAGE
Section
MCP: NOR/SRAM NOR/UtRAM
DENSITY Family INFORMATION Part Size Type
RS3204
x8/x16
RS3208
x8/x16
RU6416 RRU646416 RRU646432
x8x16 x8x16
RRU128128128 RU256128 RUU25612864
K5A3240YTC-T755000 K5A3240YBC-T755000 K5A3240CTM-F755000 K5A3240CBM-F755000 K5A3280YTC-T755000 K5A3280YBC-T755000 K5A3281CTM-F(D)755000 K5A3281CBM-F(D)755000 K5J6316CTM-F770000 K5J6316CBM-F770000 KAD060J00M-FLLL000 KAD070J00M-FLLL000 KAD060300B-TLLL000 KAD070300B-TLLL000 KAD060300C-FLLL000 KAD070300C-FLLL000 KAD190F00M-DUUUT00 K5L5628JTM-DH18T00 K5L5628JBM-DH18000 KAH170K00M-DUUUT00 KAH220K00M-DUUUT00
8_11_1.2 8_11_1.2 8_11_1.2 8_11_1.2 8_11.6_1.4 8_11.6_1.4 8_11.6_1.4 8_11.6_1.4 8x12x1.4 8x12x1.4 8x12x1.4
69TBGA 69FBGA 69TBGA 69FBGA 69FBGA 69FBGA 69TBGA 69FBGA 115FBGA 115FBGA 115FBGA
NOTES: N=NAND R=NOR S=SRAM U=UtRAM sales product details
MCP: OneNANDTM/DRAM
DENSITY INFORMATION Family Part Size Type
ODD1G256256
KAT00W00EM-DU55000
11.5x13x1.4
167FBGA
NOTES: O=OneNAND D=DRAM sales product details
MCP: NOR/DRAM
DENSITY INFORMATION Family Part Size Type
RD32128 RDD32128128 RD64256 RD256128 RRD256256128
K5H3228CTM-D81H000 KAN15000DA-DL22000 K5H6358ETM-D775000 K5K5629ATA-DF90000 KAS230009A-D445000
10x13x0.8 10.5x13x1.4 10x11x0.8(0.65) 9x11x1.4 9x11x1.4
120FBGA 167FBGA 145FBGA 103FBGA 103FBGA
NOTES: R=NOR D=DRAM sales product details
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
MCPs
MCP: NOR/OneNAND/UtRAM
DENSITY INFORMATION Family Part Size Type
1280
1280
KAB02D100M-TLGP000 KAB01D100M-TLGP000 KAB02D100A-FLGL000 KAB01D100A-FLGL000 RRNU646412832 KBB06A300M-T402000 KBB05A300M-T402000 KBB06A300A-D402000 KBB05A300A-D402000 RRNU646412864 KBB06A500M-T402000 KBB05A500M-T402000 KBB06A500A-D402000 KBB05A500A-D402000 RRNU646425664 KBB06B400M-F(D)402000 KBB05B400M-F(D)402000 KBB06B500A-D402000 KBB05B500A-D402000 ROU256128128 KAP17YG00M-DUUU000 KAP22YG00M-DUUU000 ROU256256128 KAP20VH00A-DL8L000 KAP21VH00A-DL8L000 KAP17VG00M-DUUU000 KAP22VG00M-DUUU000 ROU256512128 KAP17SG00A-D4U4000 ROUU256512128128 KBH10EA00A-D414000 KBH10ED00A-D414000 ROOU256512512128 KBJ16KC00A-D418000 KBJ17KC00A-D418000 KBJ10KB00A-D416000 KBJ11KB00A-D416000 ROUU2561G128128 KBH16PE00M-D421000(1C/S) KBH17PE00M-D4210(T)00(1C/S) KBH10PD00M-D414000(1C/S)
RNU6412832
8_12_1.4 8_12_1.4 8_12_1.4 8_12_1.4 8_13_1.4 8_13_1.4 8_13_1.4 8_13_1.4 8_13_1.4 8_13_1.4
80TBGA 80FBGA 80TBGA 80FBGA 80TBGA 80FBGA 80FBGA 80FBGA 80FBGA 80FBGA
10.5x14x1.4 10.5x14x1.4 10.5x14x1.4
167FBGA 167FBGA FBGA
10.5x14x1.4
FBGA
NOTES: R=NOR O=OneNAND N=NAND U=UtRAM sales product details
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
Optical Storage
MEMORY STORAGE
Section
COMBO DRIVE
TS-H492A CD-RW DVD-ROM
Recording Capacity CD-RW Disc 700/650MB (Type 80/74) Disc 800/700/650MB Drive Type Internal Type Interface EIDE/ATAPI Loading Type Motorized Tray Type Average Access Time Dimensions (WxHxDmm) Buffer Memory Drive Mounting Supported Disc
CD-RW, DVD: 130ms 148.2 110ms
Horizontal/Vertical DVD/RAM. DVD±R/RW DVD-ROM, DVD-Video, CD-R, CD-RW, CD-DA, CD-ROM, ROM/XA, VideoCD, CD-I, PhotoCD, CD-EXTRA,CD TEXT
CR-RW DRIVE
TS-H292A
Recording Capacity CD-RW Disc 700/650MB (Type 80/74) Disc 800/700/650MB (Type 90/80/74) Write ReWrite Read Drive Type Internal Type Interface EIDE/ATAPI Loading Type Motorized Tray Type Average Access Time (SW-252F) 100ms Dimensions (WxHxDmm) Buffer Memory Drive Mounting Supported Disc
148.2
Horizontal/Vertical CD-R/CD-RW, CD-DA, CD-ROM, CD-ROM/XA, VideoCD, CD-I, PhotoCD, CD-EXTRA, CD-TEXT
DVD-MULTI RECORDER
TS-H552U
Drive Type Internal Type DVD±R/RW CD-R/CD-RW Interface EIDE/ATAPI DVD-S Average Seek Time CD-ROM 130ms 130ms DVD-R/DVD-RW 150ms DVD-RAM 170ms Dimensions (WxHxDmm) Buffer Memory Supported Disc DVD-ROM, DVD±R/RW, DVD-Video, CD-R/RW, CD-DA, CD-ROM, CD-ROM-XA, Video-CD, CD-I, Photo CD-EXTRA, CD-TEXT
DVD-ROM DRIVE
TS-H352A
Drive Type Internal Type Multi-Read DVD-ROM Drive Loading Interface Type EIDE/ATAPI Motorized Tray Type Average Access Time 90ms 90ms Dimensions (WxHxDmm) 148.2 Buffer Memory 512KB Drive Mounting Horizontal/Vertical Supported Disc DVD-RAM, DVD-R, DVD-RW, DVD-ROM, DVD-Video, CD-R/RW, CD-DA, CD-ROM, CD-ROM/XA, Video-CD, CD-I, Photo CD-EXTRA, CD-TEXT
CD-ROM DRIVE
SH-152A
Drive Type Internal Type Multi-Read CD-ROM Drive Disc Loading Interface Diameter Type EIDE/ATAPI 80mm 120mm Motorized Tray Type Average Access Time 80ms Dimensions (WxHxDmm) (SC-152) 148.2 Buffer Memory 128KB Drive Mounting Supported Disc Horizontal/Vertical CD-R/RW, CD-DA, CD-ROM, CD-ROM/XA, VideoCD, CD-I, Photo CD-EXTRA, CD-TEXT
APRIL 2005
BR-05-ALL-002
SAMSUNG SEMICONDUCTOR, INC.
Section
MEMORY STORAGE
Hard Disk Drives
HARD DISK DRIVES (HDD)
Capacity SpinPoint Series 80GB 120GB 160GB Series 80GB 120GB 160GB Series 40GB Series SATA 80GB 120GB 160GB Series SATA 40GB P120 Series 200GB 250GB P120 Series SATA 200GB 250GB Series RPMs 5400 5400 5400 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 7200 Model SV0802N SV1203N SV1604N SP0802N SP1203N SP1604N SP0411N SP0812C SP1213C SP1614C SP0411C SP2014N SP2514N SP2004C SP2504C Heads Disks Interface ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 ATA-133 S-ATA S-ATA S-ATA S-ATA ATA-133 ATA-133 S-ATA S-ATA Buffer Size Seek Time MTBF 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 8.9ms 10ms 10ms 10ms 10ms 10ms 8.9ms 8.9ms 8.9ms 8.9ms 500K 500K 500K 500K 500K 500K 500K 500K 500K 500K 500K 500K 500K 600K 600K
SpinPoint Series
2.5" HARD DISK DRIVES (HDD)
Capacity SpinPoint Series Series 30GB 40GB 60GB 80GB Series SATA 40GB 60GB 80GB Rotational Speed 5400 5400 5400 5400 5400 5400 5400 MP0302H MP0402H MP0603H MP0804H HM040HI HM060HI HM080HI Head Disk Interface ATA-6 ATA-6 ATA-6 ATA-6 S-ATA S-ATA S-ATA Buffer Size
SAMSUNG SEMICONDUCTOR, INC.
BR-05-ALL-002
APRIL 2005
Samsung offers industry's broadest memory portfolio maintained leadership memory technology straight years. DRAM, SRAM Flash product lines found computers from notebooks powerful servers wide range handheld devices such smartphones. Samsung also delivers high-value storage products. These include: optical disk drives used business storage devices consumer electronics; hard disk drives mobile computers consumer devices like cellphones.
more information, visit website: www.usa.samsungsemi.com
Disclaimer: information this publication been carefully checked believed accurate time publication. Samsung assumes responsibility, however, possible errors omissions, consequences resulting from information contained herein. Samsung reserves right make changes products product specifications with intent improve function design time without notice required update this documentation reflect such changes. This publication does convey purchaser semiconductor devices described herein license under patent rights Samsung others. Samsung makes warranty, representation, guarantee regarding suitability products particular purpose, does Samsung assume liability arising application product circuit specifically disclaims liability, including without limitation consequential incidental damages.
www.usa.samsungsemi.com
Copyright 2005. Samsung Samsung Semiconductor, Inc. registered trademarks Samsung Electronics, Co., Ltd. other names brands claimed property others. appearance products, dates, figures, diagrams tables subject change time, without notice. BR-05-ALL-002 Printed 4/05

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