NE72218 HIGH POWER GAIN: PHASE NOISE: -110 dBc/Hz offset GATE LEN
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BAND N-CHANNEL GaAs MESFET
NE72218
HIGH POWER GAIN: PHASE NOISE: -110 dBc/Hz offset GATE LENGTH: (recessed gate) GATE WIDTH: SUPER MINI MOLD: (SOT-343) TAPE REEL PACKAGING
PACKAGE DIMENSIONS (Units
PACKAGE OUTLINE
1.25
+0.10 -0.05
1.25
0.65 0.60
0.65
0.65
DESCRIPTION
NE72218 cost GaAs MESFET suitable both amplifier oscillator applications through X-band. device features micron recessed gate, triple epitaxial technology fabricated using implantation improved performance, reliability uniformity. NE72218 housed super mini mold package, making ideal high density design. NEC's stringent quality assurance test procedures ensure highest reliability performance.
+0.10 -0.05
CONNECTIONS Source Gate Source Drain
+0.10 0.15 -0.05
ELECTRICAL CHARACTERISTICS 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB IDSS (OFF) IGSO PARAMETERS CONDITIONS Power Gain Output Power Gain Compression Point Phase Noise GHz, offset Transconductance Saturated Drain Current Gate Source Voltage Gate Source Leakage Current dBc/Hz -0.5 15.0 -110 -2.0 -4.0 Phase Noise GHz, offset dBc/Hz UNITS NE72218
California Eastern Laboratories
NE72218 ABSOLUTE MAXIMUM RATINGS1 25°C)
SYMBOLS TSTG PARAMETERS Drain Source Voltage Gate Source Voltage Gate Drain Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS IDSS RATINGS -5.0 -5.0 +125 NE72218-T1 Kpcs/Reel 8-mm wide embossed tape, (Source), (Gate) face perforated side tape.
ORDERING INFORMATION
PART NUMBER NE72218 QUANTITY Bulk PACKAGE STYLE 8-mm wide embossed tape, (Source), (Drain) face perforated side tape.
Notes: Operation excess these parameters result permanent damage.
IDSS CLASSIFICATION
RANK IDSS (mA) DRAIN CURRENT DRAIN SOURCE VOLTAGE
MARKING
TYPICAL PERFORMANCE CURVES 25°C)
TOTAL POWER DISSIPATION AMBIENT TEMPERATURE
Total Power Dissipation, (mW)
Drain Current, (mA)
-0.5 -1.0
Ambient Temperature, (°C) DRAIN CURRENT GATE SOURCE VOLTAGE
Drain Source Voltage, BASE BAND NOISE OFFSET FREQUENCY
Base Band Noise, dBv/Hz
-100 -110 -120 -130 -140 -150
Drain Current, (mA)
-4.0 -2.0
-160
Gate Source Voltage,
Offset Frequency,
NE72218 NE72218 NONLINEAR MODEL
SCHEMATIC
CGD_PKG 0.003pF LG_PKG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF 0.22nH 0.15pF 0.02pF 0.82nH LD_PKG DRAIN 0.1nH
0.15pF
LS_PKG 0.05nH
SOURCE
NONLINEAR MODEL PARAMETERS
Parameters VTOSC ALPHA BETA GAMMA GAMMADC DELTA CGSO CGDO DELTA1 DELTA2 -1.34 0.04 0.07 0.03 1e-14 4e-12 0.27e-12 5000 1e-10 0.85e-12 0.055e-12 Infinity Parameters RGMET TNOM VTOTC BETATCE 2e-10 1.43
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: Bias: IDSS Power: Date: 4/98
Series Libra Model
NE72218 NE72218 (RANK NONLINEAR MODEL SCHEMATIC
CGD_PKG 0.003pF LG_PKG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF 0.22nH 0.15pF 0.02pF 0.82nH LD_PKG DRAIN 0.1nH
0.15pF
LS_PKG 0.05nH
SOURCE
NONLINEAR MODEL PARAMETERS
Parameters VTOSC ALPHA BETA GAMMA GAMMADC DELTA CGSO CGDO DELTA1 DELTA2 -1.8065 0.0396 0.072 0.03 1e-14 4e-12 0.27e-12 5000 1e-10 0.85e-12 0.055e-12 Infinity Parameters RGMET TNOM VTOTC BETATCE 2e-10 1.43
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: Bias: IDSS Date: 4/98
Series Libra Model
NE72218 NE72218 (RANK NONLINEAR MODEL SCHEMATIC
CGD_PKG 0.003pF LG_PKG GATE 0.55nH 0.48nH CDS_PKG CGS_PKG 0.12pF 0.22nH 0.15pF 0.02pF 0.82nH LD_PKG DRAIN 0.1nH
0.15pF
LS_PKG 0.05nH
SOURCE
NONLINEAR MODEL PARAMETERS
Parameters VTOSC ALPHA BETA GAMMA GAMMADC DELTA CGSO CGDO DELTA1 DELTA2 -1.34 0.04 0.07 0.03 1e-14 4e-12 0.27e-12 5000 1e-10 0.85e-12 0.055e-12 Infinity Parameters RGMET TNOM VTOTC BETATCE 2e-10 1.43
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: Bias: IDSS Power: Date: 4/98
Series Libra Model
EXCLUSIVE NORTH AMERICAN AGENT
MICROWAVE OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, 95054-1817 (408) 988-3500 Telex 34-6393 (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. Canada only) Internet: http://WWW.CEL.COM 1/99 DATA SUBJECT CHANGE WITHOUT NOTICE
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