PRODUCT DESCRIPTION (for qualification) Information provided this

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Static MARKETING PART CY7C122 DEVICE DESCRIPTION
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7C122 Static RAM, Separate Cypress Semiconductor 7C122A 1991 What markings Die:
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
DIE/FAB DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: None CMOS, Double Poly, Single Metal 1.2µm SiO2 Cypress Semiconductor Round Rock, Generic Process Technology/Design Rule (µ-drawn): Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Metal Composition: 1%SiAl LTO, Oxynitride
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Epoxy Thermocompression Copper Solder, 63%Sn 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor, Jose, Cypress Semiconductor/ Silver Epoxy Gold 22-pin, Plastic side Sumitomo EME-6300H(R)
Name/Location Assembly (prime) facility:
CYPRESS SEMICONDUCTOR PAGE
HERMETIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Paste Ultrasonic Alloy-42 Solder, 63%Sn 37%Pb Aluminum Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor Cypress Semiconductor, Jose, Silver Glass Aluminum 1.25 22-pin, Ceramic side
Name/Location Assembly (prime) facility:
CYPRESS SEMICONDUCTOR PAGE
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain: CY7C122, CY9122, CY91L22, CY93422, CY93L422 Test paramaters options Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink/Date Fab/Assembly site change/Date Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None None Process Change/Date: Cross Licensee/Licensor >2000V UL-94V0 Fab: Jose, (Fab Assembly: Omedata Corporation, Indonesia None None
Voltage Rating (per STD-008, Method 3018):
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): (130°C/85%RH) Temperature Cycle (-65°C 150°C) Data Retention Bake, Plastic (185°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 130°C, 100%RH) Tests (MIL-STD 883, method 3015) Operating Life (temp): Latchup Testing Other: Other: Other: Other: 150°C
CYPRESS SEMICONDUCTOR PAGE
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Supplier's Part Number Static Jose, Rated Size/ Speed Type Revision Size Design Rule Fabrication Passivatio Mold Assembly Type Compound Line Location Volt Rating Availability (mm/yy)
Process Line
CY7C122 -xxPC -xxDC -xxDMB -xxPC -xxDC -xxDMB -xxPC -xxDC -xxDMB ADMB ADMB NOTE: 15ns 45ns 15ns 45ns 25ns 45ns 35ns 22.4 PDIP 22.4 CDIP 22.4 CDIP 22.4 PDIP 22.4 CDIP 22.4 CDIP 22.4 PDIP 22.4 CDIP 22.4 CDIP 22.4 PDIP 22.4 PDIP 22.4 CDIP 22.4 CDIP 22.4 CDIP 22.4 CDIP 22.4 PDIP 22.4 PDIP 22.4 CDIP 22.4 CDIP 22.4 CDIP 22.4 CDIP 7C122A 1.2µ CMOS CMOS CMOS CMOS Oxynitride Oxynitride Oxynitride Oxynitride Sumitomo Jose, >2000V
CY9122
7C122A
1.2µ
Sumitomo
Jose,
>2000V
CY91L22
7C122A
1.2µ
Sumitomo
Jose,
>2000V
CY93422
7C122A
1.2µ
Sumitomo
Jose,
>2000V
CY93L422PC
"xx" replaces speed grades device. Options 7C122 15ns, 25ns, 35ns, 45ns Military grade starts 25ns (xMB) 7C122 9122 35ns 91L22, 93422, 93L422.
CYPRESS SEMICONDUCTOR PAGE
DEVICE RELIABILITY SUMMARY
Marketing Part: Description:
CY7C122 22-pin PDIP
Wafer Fab: Assembly:
Jose, Jose,
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Device 7C122 Lot# 2026786 Hours 6/19751 High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C), Device 7C122 Lot# 2026786 Hours 0/343 Hours 0/341 Cumulative 0/341 Cumulative 6/1975
Temperature Cycle (Condition -65°C 150°C) Device 7C122 Lot# 2026786 cycles 0/76 Cycles 0/76 Cumulative 0/76
Pressure Cooker (PCT, Unbiased, 130°C, 100%RH, Device 7C122 Lot# 2026786 Hours 0/76 Hours 0/76 Cumulative 0/76
High Accelerated Saturation Test (HAST, Unbiased, 130°C, 85%RH, 15psig) Device 7C122
Lot# 2026786
Hours 0/76
Cumulative 0/76
EOS(5), ESD(1)
CYPRESS SEMICONDUCTOR PAGE
Device Reliability Summary
Static CY7C122 Electrostatic Discharge Human Body Model Circuit 883, Method 3015 +2000 Unit -2000 +2000 Unit -2000 +2000 Unit -2000 (Highest Passing Voltage, +100% Guard-banded)
CYPRESS SEMICONDUCTOR PAGE
CYPRESS PREVIOUS QUALIFICATION
Device Status: 7C122A Production Prod. Family: Results: Static Passed Mask Complete Date: 7C122A 1984
Process
Technology:
CMOS
Process Loc:
Jose,
Package:
PDIP (Plastic) CDIP (Ceramic) Silver Epoxy (Plastic) Silver Glass (Ceramic)
Mold Compound:
Sumitomo (Plastic Only)
Lead Frame
PDIP: Copper CDIP: Alloy Jose,
Attach Mat:
Package Loc:
PDIP: Jose, Omedata Ceramic: Jose
Test Loc:
Cypress Test
Stress/Test
Reference Method Temp/Bias
Actual Conditions Hrs/Cyc SS/Fail 1191/0
Status
Qualification Data Reference
Test Result Pass Fail
HTOL HTOL Steam Test/Autoclave/PCT HAST
150°/5.75V 150°/5.75V
121°/100%RH 121°/85%RH
Reliability Monitor
220/0 75/0 55/0
Reliability Monitor Reliability Monitor Reliability Monitor
Temperature Cycle Accelerated Soft Error Rate Mechanical Sequence X-Ray ESD-HBM 2000V Latch-up
Flammability Oxygen Index
Cond.
Corner Pins 200mA
Internal Pins
-5/0
Thermal Series Mechanical Series Solvent Resistance Internal Visual Physical Dimensions Solderability Lead Integrity Bond Strength Shear Strength Torque
Group Group
Various Various
168/0 182/0
Inspection Inspection
Interim, Complete

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