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FN4603.1 Radiation Hardened CMOS Dual DPST Analog Switch Int


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HS-302RH-T
FN4603.1
Radiation Hardened CMOS Dual DPST Analog Switch
Intersil's Satellite Applications Flow(SAF) devices fully tested guaranteed 100kRAD Total Dose. These Class devices processed standard flow intended meet cost shorter lead-time needs large volume satellite manufacturers, while maintaining high level reliability. HS-302RH-T analog switch monolithic device fabricated using Radiation Hardened CMOS technology Intersil dielectric isolation process latch-up free operation. Improved total dose hardness obtained layout (thin oxide tabs extending channel stop) processing (hardened gate oxide). These switches offer lowresistance switching performance analog voltages supply rails. "ON" resistance stays reasonably constant over full range operating voltage current. "ON" resistance also stays reasonably constant when exposed radiation, being typically pre-rad post 100kRAD(Si). This device provide break-before-make switching.
Features
Class MIL-PRF-38535 Radiation Performance Gamma Dose RAD(Si) Latch-Up, Dielectrically Isolated Device Islands Compatible with Intersil HI-302 Series Analog Switches Analog Signal Range Leakage 100nA (Max, Post Rad) (Max, Post Rad) Operating Power. 100µA (Max, Post Rad)
Pinouts
HS1-302RH-T (SBDIP), CDIP2-T14 VIEW
Specifications
Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed below must used when ordering. Detailed Electrical Specifications HS-302RH-T contained 5962-95812. "hot-link" provided from website downloading. Intersil's Quality Management Plan Plan), listing Class screening operations, also available website.
HS9-302RH-T (FLATPACK), CDFP3-F14 VIEW
Ordering Information
ORDERING NUMBER 5962R9581201TCC 5962R9581201TXC PART NUMBER HS1-302RH-T HS9-302RH-T TEMP. RANGE (oC)
Functional Diagram
NOTE: Minimum order quantity units through distribution, units direct. TRUTH TABLE LOGIC SWITCHES
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil (and design) trademark Intersil Americas Inc. Copyright IntersilAmericas Inc. 2002. Rights Reserved Satellite Applications Flow(SAF) trademark Intersil Corporation.
HS-302RH-T Characteristics
DIMENSIONS: (2130µm 1930µm 279µm ±25.4µm) 11mils ±1mil METALLIZATION: Type: Thickness: SUBSTRATE POTENTIAL: Unbiased (DI) BACKSIDE FINISH: Gold PASSIVATION: Type: Silox (SiO2) Thickness: WORST CASE CURRENT DENSITY: 2.0e5 A/cm TRANSISTOR COUNT: PROCESS: Metal Gate CMOS, Dielectric Isolation
Metallization Mask Layout
HS-302RH-T
Intersil U.S. products manufactured, assembled tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications viewed www.intersil.com/design/quality
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design, software and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 7585 Irvine Center Drive Suite Irvine, 92618 TEL: (949) 341-7000 FAX: (949) 341-7123 Intersil Corporation 2401 Palm Palm Bay, 32905 TEL: (321) 724-7000 FAX: (321) 724-7946 EUROPE Intersil Europe Sarl Ave. William Graisse, 1006 Lausanne Switzerland TEL: 6140560 FAX: 6140579 ASIA Intersil Corporation Unit 1804 18/F Guangdong Water Building Austin Road TST, Kowloon Hong Kong TEL: +852 2723 6339 FAX: +852 2730 1433

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