2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802
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Top Searches for this datasheet
2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802
JANTX, JANTXV POWER MOSFET TO-205 PACKAGE, QUALIFIED MIL-PRF-19500/557
N-Channel, Enhancement Mode MOSFET Power Transistor
FEATURES
RDS(on) Ease Paralleling Qualified MIL-PRF-19500/557
DESCRIPTION
This hermetically packaged product features latest advanced MOSFET technology. Military requirements where small size, high performance high reliability required, applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS PART NUMBER 2N6796 2N6798 2N6800 2N6802 DS(on) 1.00 1.50
ATIC
MECHANICAL OUTLINE
Connection Source Gate Drain (Case)
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6796
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C note =7.5 note
.195 -100 28.5 16.6
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time
Typ.
Max.
Units
Test Conditions 8.0A 3,VG A/µs ,d/t
Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Min.
Typ. 0.21
Max.
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/557
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6798
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C note =7.5 note
-100 42.1 28.1
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time
Typ.
Max.
Units
Test Conditions 3,VG A/µs ,d/t
Thermal Resistance Parameter thJC Junction-to-Case thCS Case-to-sink thJA Junction-to-Ambient
Min.
Typ. 0.21
Max.
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/557
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6800
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C 3.0A note =7.5 note
1.10 -100 16.6
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Typ.
Max.
Units
Test Conditions 3,VG ,d/t<100A/µs
Min.
Typ. 0.21
Max.
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/557
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796 2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800 2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6802 0.20
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
TSTG
Gate-Source Voltage Single Pulse Avalanche Energy Operating Junction Storage Temperature Range Lead Temperature
(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C note note
-100 29.5 28.1
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Typ.
Max.
Units
Test Conditions 3,VG ,d/t<100A/µs
Min.
Typ. 0.21
Max.
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/557
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
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