2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
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Top Searches for this datasheet
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
JANTX, JANTXV POWER MOSFET TO-204 PACKAGE, QUALIFIED MIL-PRF-19500/543
100V Thru 500V, 38A, N-Channel, Enhancement Mode MOSFET Power Transistor
FEATURES
RDS(on) Ease Paralleling Qualified MIL-PRF-19500/543
DESCRIPTION
This hermetically packaged product features latest advanced MOSFET technology. Military requirements where small size, high performance high reliability required, applications such switching power supplies, motor controls, inverters, choppers, audio amplifiers high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS PART NUMBER 2N6764 2N6766 2N6768 2N6770 DS(on) .055 .085
ATIC
1.53 REF. 0.875 MAX. 0.135 MAX.
MECHANICAL OUTLINE
1.197 1.177 0.675 0.655 0.440 0.420
0.188 MAX. 0.450 0.250 0.312 MIN.
SEATING PLANE
0.043 0.038
0.225 0.205
0.161 0.151
0.525 MAX.
Connection Drain Source Gate
PLCS. Note: part number 2N6764 2N6766 mechanical dimensions same above except lead diameter 0.058 0.063 max.
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6764
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C note 38A, =2.35 note
0.055 0.065 -100
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Typ.
Max.
Units
Test Conditions 3,VG 38A,d/t< 100A/µs
Min.
Typ. 0.21
Max. 0.83
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/543
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6766
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C 100V note 30A, =2.35 note
.085 .090 -100
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Typ.
Max.
Units
Test Conditions 3,VG A,d/t<100A/µs
Min.
Typ. 0.21
Max. 0.83
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/543
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6768
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 125°C note 2.35 note
.300 .400 -100
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Typ.
Max. 1200
Units
Test Conditions 3,VG A,d/t<100A/µs
Min.
Typ. 0.21
Max. 0.83
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/543
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766
2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770
ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted
Parameter 10V, 25°C Continuous Drain Current JANTXV, JANTX, 2N6770 7.75
Units W/°C
10V, 100°C Continuous Drain Current 25°C Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
Gate-Source Voltage Single Pulse Avalanche Energy Avalanche Current1 Operating Junction Storage Temperature Range Lead Temperature
300(.06 from case sec)
ELECTRICAL CHARACTERISTICS 25°C (Unless Otherwise Specified)
Parameter BVDSS Drain-Source Breakdown Voltage DS(on) ri-oSuc On-State Resistance VGS(th) Gate Threshold Voltage Zero Gate Voltage Drain Current Gate -to-Source Leakage Forward Gate -to-Source Leakage Reverse G(on) On-state Gate Charge Gate-to-Source Charge Gt-oDan(Mle" aet-ri "ilr) Turn-On Delay Time D(on) Rise Time t(off) Turn-Off Delay Time
Min.
Typ.
Max.
Units
Test Conditions =1.0 400V, 125°C note 2.35 note
.400 .500 -100
Source-Drain Diode Ratings Characteristics Parameter Min. Diode Forward Voltage Reverse Recovery Time Thermal Resistance Parameter Junction-to-Case thJC thCS Case-to-sink thJA Junction-to-Ambient
Typ.
Max. 1600
Units
Test Conditions 3,VG 12A,d/t<100A/µs
Min.
Typ. 0.21
Max. 0.83
Units
Test Conditions
°C/W
Mutn sraefa, onig smooth, greased
Typical socket mount
Rpttv Rtn:Plewdhlmtdb mxmmjnto tmeaue eeiie ucin eprtr. trig 10%, Peak Duty Cycle MIL-S-19500/543
Crawford Street, Leominster, 01453 (508) 534-5776 (508) 537-4246
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