File Number 4780.2 Radiation Hardened 2.5V Reference Fe

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File Number 4780.2 Radiation Hardened 2.5V Reference Fe

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IS-1009RH
File Number
4780.2
Radiation Hardened 2.5V Reference
Features
Electrically Screened 5962-00523 Qualified MIL-PRF-38535 Requirements Radiation Environment Total Dose. krad(Si) (Max) Latch-up Immune Dielectrically Isolated Lower IMIN than Other 1009 Types 100µA Reverse Breakdown Voltage (VZ). 2.5V Change Current (100µA 10mA). Temp (-55oC 125oC) 15mV Reverse Breakdown Current 20mA Interchangeable with 1009 Industry Types
Star*Power Radiation Hardened IS-1009RH 2.5V shunt regulator diode designed provide stable 2.5V reference over wide current range.
device exceptionally stable over wide current range designed maintain stability over full miitary temperature range over time. operates specified lower minimum current than other 1009 types. 0.2% reference tolerance achieved on-chip trimming. adjustment terminal provided allow calibration system errors. this terminal adjust reference voltage does effect temperature coefficient. Constructed with Intersil dielectrically isolated EBHF process, these devices immune Single Event Latch-up have been specifically designed provide highly reliable performance harsh radiation environments. Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed here must used when ordering. Detailed Electrical Specifications these devices contained 5962-00523. "hot-link" provided homepage downloading.
Applications
Power Supply Monitoring Reference Systems Reference
Ordering Information
ORDERING NUMBER 5962F0052301VXC 5962F0052301QXC 5962F0052301VYC INTERNAL MKT. NUMBER IS2-1009RH-Q IS2-1009RH-8 ISYE-1009RH-Q ISYE-1009RH-8 IS2-1009RH/Proto ISYE-1009RH/Proto TEMP. RANGE (oC)
Pinouts
IS2-1009RH (TO-206AB CAN) BOTTOM VIEW
5962F0052301QYC IS2-1009RH/Proto ISYE-1009RH/Proto
ISYE-1009RH (SMD.5) BOTTOM VIEW
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Intersil Design trademark Intersil Corporation. Copyright Intersil Corporation 2000 Star*Poweris trademark Intersil Corporation.
IS-1009RH Characteristics
DIMENSIONS 1270µm 1778µm mils mils) Thickness: 483µm ±25.4µm mils mil) INTERFACE MATERIALS Glassivation Type: Nitride (Si3N4) over Silox (SiO2) Nitride Thickness: Silox Thickness: Metallization Type: AlSiCu Thickness: Substrate EBHF, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFORMATION Worst Case Current Density <1.0 A/cm2 Transistor Count
Metallization Mask Layout
IS-1009RH
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 883, Mail Stop 53-204 Melbourne, 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil Mercure Center 100, Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil Ltd. 8F-2, Sec. Chien-kuo North, Taipei, Taiwan Republic China TEL: 886-2-2515-8508 FAX: 886-2-2515-8369

File Number 4780.2 Radiation Hardened 2.5V Reference Fe

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