CY7C276 Reprogrammable PROM 0.8-micron CMOS optimum speed/po

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CY7C276 Reprogrammable PROM 0.8-micron CMOS optimum speed/po

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7C27
CY7C276
Reprogrammable PROM
0.8-micron CMOS optimum speed/power High speed (for commercial military)
Functional Description
CY7C276 high-performance 16K-word 16-bit CMOS PROM. available 44-pin PLCC/CLCC 44-pin packages, 100% reprogrammable windowed packages. memory cells utilize proven EPROM floating gate technology word-wide programming algorithms. CY7C276 allows user independently program polarity each chip select (CS2-CS0). This provides on-chip decoding eight banks PROM. polarity asynchronous output enable (OE) also programmable. order read CY7C276, three chip selects must active must asserted. contents memory location addressed address lines (A13-A0) will become available output lines (D15-D data will remain outputs until address changes outputs disabled.
25-ns access time
16-bit-wide words Three programmable chip selects Programmable output enable 44-pin PLCC 44-pin packages 100% reprogrammable windowed packages TTL-compatible Capable withstanding greater than 2001V static dis-
charge
Logic Block Diagram
PROGRAMMABLE ARRAY DECODE
C276-1
Configuration
LCC/PLCC/CLCC View
C276-2
Cypress Semiconductor Corporation
3901 North First Street
Jose 95134 408-943-2600 March 1991 Revised December 1993
CY7C276
Selection Guide
CY7C276-25 Maximum Access Time (ns) Maximum Operating Current (mA) Commercial Military CY7C276-30 CY7C276-35
Maximum Ratings
(Above which useful life impaired. user guidelines, tested.) Storage Temperature -65°C to+150°C Ambient Temperature with Power Applied. -55°C to+125°C Supply Voltage Ground Potential -0.5V to+7.0V Voltage Applied Outputs High State -0.5V to+7.0V Input Voltage. -3.0V +7.0V Program Voltage .13.0V Erasure .7258 Wsec/cm2
Static Discharge Voltage >2001V (per MIL-STD-883, Method 3015) Latch-Up Current >200
Operating Range
Range Commercial Industrial[1] Military[2] Ambient Temperature +70°C -40°C +85°C -55°C +125°C ±10% ±10% ±10%
Electrical Characteristics[3,
CY7C276-25 CY7C276-30 CY7C276-35 Parameter Description Output HIGH Voltage Output Voltage Input HIGH Level Input Level Input Leakage Current Input Clamp Diode Voltage Output Leakage Current Output Short Circuit Current Power Supply Current Max., VOUT VOH, Output Disabled Max., VOUT 0.0V[5] Max., IOUT Com'l Military Test Conditions Min., -2.0 Min., (6.0 Mil) Guaranteed Input Logical HIGH Voltage Inputs Guaranteed Input Logical Voltage Inputs -3.0 Min. Max. Unit
Note
Capacitance[3]
Parameter COUT Description Input Capacitance Output Capacitance Test Conditions 25°C, MHz, 5.0V Max. Unit
Notes: Contact Cypress representative industrial temperature range specifications. "instant case temperature Introduction CMOS PROMs this Data Book general information testing. last page this specification Group subgroup testing information. test purposes, more than output time should shorted. Short circuit test duration should exceed seconds.
CY7C276
Test Loads Waveforms
(658 MIL) (658 MIL) (403 MIL)
C276-3 C276-4
3.0V
INPUT PULSES
OUTPUT INCLUDING SCOPE
OUTPUT (403 MIL) INCLUDING SCOPE
Normal Load
High Load
Equivalent EQUIVALENT OUTPUT (250MIL) 2.0V (1.9V Mil)
C276-5
Switching Characteristics Over Operating Range[3,4]
CY7C276-25 Parameter tCSOV tCSOZ tOEV tOEZ Description Address Output Data Valid Active Output Valid Inactive High Output Active Output Valid Inactive High Output Min. Max. CY7C276-30 Min. Max. CY7C276-35 Min. Max. Unit
Erasure Characteristics
recommended dose ultraviolet light erasure wavelength 2537 Angstroms minimum dose intensity multiplied exposure time) Wsec/cm2. ultraviolet lamp with mW/cm2 power rating exposure time would approximately minutes. 7C276 needs within inch lamp during erasure. Permanent dam-
result EPROM exposed high-intensity light extended period time. 7258 Wsec/cm2 recommended maximum dosage. Wavelengths light less than 4000 Angstroms begin erase 7C276 windowed package. this reason, opaque label should placed over window EPROM exposed sunlight fluorescent lighting extended periods time.
CY7C276
Switching Waveforms
Read Operation Timing Diagram
ADDR
ADDR
DATA
DATA
C276-6
Chip Select Output Enable Timing Diagrams
ACTIVE HIGH
INACTIVE
ACTIVE
INACTIVE
tCSOV VALID
tOEZ
tOEV
tCSOZ VALID
HIGH
C276-7
Notes: CS0, assumed active.
Architecture Configuration Bits
CY7C276 four user-programmable options addition reprogrammable data array. detailed programming information contact your local Cypress representative. programmable options determine active polarity three chip selects (CS2 CS0) When these control bits programmed with inputs active LOW. When these control bits programmed with inputs active HIGH.
Programming Information
Programming support available from Cypress well from number third-party software vendors. detailed programming information, including listing software packages, please PROM Programming Information located this section. Programming algorithms obtained from Cypress representative.
CY7C276
Table Control Word Architecture Configuration Control Word Control Option Programmed Level 0=Default 1=Programmed 0=Default 1=Programmed 0=Default 1=Programmed 0=Default 1=Programmed Function Active Active HIGH Active Active HIGH Active Active HIGH Active Active HIGH
Programmer Address (Hex) 0000 3FFF 4000 Data Data Control Word Data
Control Word (4000H) Table Program Mode Table Mode Program Inhibit Program Enable Program Verify VIHP VILP VIHP VIHP VIHP VILP High Data Data
Table Configuration Mode Table Mode Program Inhibit Program Control Word Verify Control Word VIHP VILP VIHP VIHP VIHP VILP High Control Word Control Word
CY7C276
C276-8
Figure Programming Pinout
CY7C276
Typical Characteristics
NORMALIZED tCKA CYCLE ACCESS TIME (ns) NORMALIZED SUPPLY VOLTAGE =90°C 0.95 0.90 1000 0.85 =25°C VCC=4.5V OUTPUT VOLTAGE =25°C VCC=5.5V =25°C NORMALIZED OUTPUT VOLTAGE VCC=4.5V NORMALIZED TEMPERATURE
AMBIENT TEMPERATURE (°C) NORMALIZED AMBIENT TEMPERATURE 1.05 VCC=5.6V
tCKA CHANGE OUTPUT LOADING
SUPPLYVOLTAGE(V) NORMALIZED TEMPERATURE
OUTPUT LOAD (pF)
AMBIENT TEMPERATURE (°C) tOEV CHANGE OUTPUT LOADING
=4.5V
TEMPERATURE(°C) 1000
C276-9
=4.5V =25°C
OUTPUT LOAD (pF)
CY7C276
Ordering Information[7]
Speed (ns) Package Name Operating Range Commercial
Ordering Code CY7C276-25HC CY7C276-25JC CY7C276-25HMB CY7C276-25QMB
Package Type 44-Pin Windowed Leaded Chip Carrier 44-Lead Plastic Leaded Chip Carrier 44-Pin Windowed Leaded Chip Carrier 44-Pin Windowed Leadless Chip Carrier 44-Pin Windowed Leaded Chip Carrier 44-Lead Plastic Leaded Chip Carrier 44-Pin Windowed Leaded Chip Carrier 44-Pin Windowed Leadless Chip Carrier 44-Pin Windowed Leaded Chip Carrier 44-Lead Plastic Leaded Chip Carrier 44-Pin Windowed Leaded Chip Carrier 44-Pin Windowed Leadless Chip Carrier
Military
CY7C276-30HC CY7C276-30JC CY7C276-30HMB CY7C276-30QMB
Commercial
Military
CY7C276-35HC CY7C276-35JC CY7C276-35HMB CY7C276-35QMB
Commercial
Military
Notes: Most above products available industrial temperature range. Contact Cypress representative specifications product availability.
MILITARY SPECIFICATIONS Group Subgroup Testing Characteristics
Parameter Subgroups
Switching Characteristics
Parameter tCSOV tOEV Subgroups
Document 38-00183-D
CY7C276
Package Diagrams
44-Pin Windowed Leaded Chip Carrier
CY7C276
Package Diagrams (continued)
44-Lead Plastic Leaded Chip Carrier 44-Square Leadless Chip Carrier
MIL-STD-1835
44-Pin Windowed Leadless Chip Carrier
MIL-STD-1835
Cypress Semiconductor Corporation, 1993. information contained herein subject change without notice. Cypress Semiconductor Corporation assumes responsibility circuitry other than circuitry embodied Cypress Semiconductor product. does convey imply license under patent other rights. Cypress Semiconductor does authorize products critical components life-support systems where malfunction failure reasonably expected result significant injury user. inclusion Cypress Semiconductor products life-support systems application implies that manufacturer assumes risk such doing indemnifies Cypress Semiconductor against charges.

CY7C276 Reprogrammable PROM 0.8-micron CMOS optimum speed/po

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