Radiation Hardened Dual, Inverting Power MOSFET Drivers Radiation

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Radiation Hardened Dual, Inverting Power MOSFET Drivers Radiation

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HS-4423RH, HS-4423BRH
Radiation Hardened Dual, Inverting Power MOSFET Drivers
Radiation Hardened HS-4423RH HS-4423BRH inverting, dual, monolithic high-speed MOSFET drivers designed convert level signals into high current outputs voltages 18V. inputs these devices compatible directly driven HS-1825ARH device ACS/ACTS HCS/HCTS type logic devices. fast rise times high current outputs allow very quick control high gate capacitance power MOSFETs, like Hard FS055, high frequency applications. high current outputs minimize power losses MOSFETs rapidly charging discharging gate capacitance. output stage incorporates voltage lock-out circuit that puts outputs into three-state mode when supply voltage drops below HS-4423RH 7.5V HS-4423BRH. Constructed with Intersil dielectrically isolated Hard Silicon Gate (RSG) BiCMOS process, these devices immune Single Event Latch-up have been specifically designed provide highly reliable performance harsh radiation environments Specifications Hard devices controlled Defense Supply Center Columbus (DSCC). numbers listed here must used when ordering. Detailed Electrical Specifications these devices contained 5962-99511. "hot-link" provided homepage downloading.
Features
Electrically Screened DESC 5962-99511 Qualified MIL-PRF-38535 Requirements Radiation Environment Total Dose (Max). RAD(SI) Latch-Up Immune Dose Rate Immune IPEAK (Typ) Matched Rise Fall Times 4300pF) 75ns (Max) Voltage Lock-Out Feature HS-4423RH <10.0V HS-4423BRH <7.5V Wide Supply Voltage Range. Prop Delay 250ns (Max) Consistent Delay Times with Changes Power Consumption 40mW with Inputs High 20mW with Inputs Equivalent Input Capacitance .3.2pF (Typ) Protected .4000V
Applications
Switching Power Supplies DC/DC Converters Motor Controllers
Ordering Information
ORDERING NUMBER 5962F9951101VXC 5962F9951101QXC HS9-4423RH/Proto 5962F9951102VXC 5962F9951102QXC HS9-4423BRH/Proto INTERNAL MKT. NUMBER HS9-4423RH-Q HS9-4423RH-8 HS9-4423RH/Proto HS9-4423BRH-Q HS9-4423BRH-8 HS9-4423BRH/Proto TEMP. RANGE (oC)
Pinout
HS-4423RH, HS-4423BRH (FLATPACK CDFP4-F16) VIEW
NOTE: Pins doublebonded their same electrical points die.
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
HS-4423RH, HS-4423BRH Characteristics
DIMENSIONS: 4890µm 3370µm (193 mils mils) Thickness: 483µm 25.4µm mils mil) INTERFACE MATERIALS: Glassivation: Type: (Phosphorous Silicon Glass) Thickness: Metallization: Type: AlSiCu Thickness: Substrate: Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 A/cm2 Transistor Count:
Metallization Mask Layout
HS-4423RH, HS-4423BRH
(10) (11)
(15) (14)
(12)
(13)
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com

Radiation Hardened Dual, Inverting Power MOSFET Drivers Radiation

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