AGR26180E high-voltage, gold-metalized, enhancement mode, laterally di

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AGR26180E high-voltage, gold-metalized, enhancement mode, laterally di

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AGR26180E 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
AGR26180E high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (LDMOS) power transistor suitable ultrahigh-frequency (UHF) applications including multichannel multipoint distribution service (MMDS) broadcasting communications. Table Thermal Characteristics Parameter Thermal Resistance, Junction Case: AGR26180EU AGR26180EF Value Unit
0.35 0.35
°C/W °C/W
Table Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation AGR26180EU AGR26180EF Derate Above AGR26180EU AGR26180EF Operating Junction Temperature Storage Temperature Range Value Unit VDSS -0.5, W/°C W/°C
375D-03, STYLE
AGR26180EU (unflanged)
AGR26180EF (flanged)
Figure Available Packages
Features
Typical performance MMDS systems. 2600 MHz, 1700 adjacent channel 3.84 MHz, offset; alternate channel 3.84 MHz, offset. Typical ratio 11.5 0.01% (probability) CCDF*: Output power: Power gain: Efficiency: 20%. ACPR: dBc. ACLR1: dBc. Return loss: High-reliability, gold-metalization process. carrier injection (HCI) induced bias drift over years. Internally matched. High gain, efficiency, linearity. Integrated protection. Device withstand 10:1 voltage standing wave ratio (VSWR) Vdc, 2600 MHz, output power pulsed duty. Large signal impedance parameters available.
TSTG -65,
Stresses excess absolute maximum ratings cause permanent damage device. These absolute stress ratings only. Functional operation device implied these other conditions excess those given operational sections data sheet. Exposure absolute maximum ratings extended periods adversely affect device reliability.
Table Rating* AGR26180E Minimum 1000 Class
Although electrostatic discharge (ESD) protection circuitry been designed into this device, proper precautions must taken avoid exposure electrical overstress (EOS) during handling, assembly, test operations. Agere employs human-body model (HBM), machine model (MM), charged-device model (CDM) qualification requirement order determine ESD-susceptibility limits protection design evaluation. voltage thresholds dependent circuit parameters used each models, defined JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), JESD22-C101A (CDM) standards. Caution: devices susceptible damage from electrostatic charge. Reasonable precautions handling packaging devices should observed.
*The test signal utilized consists RF-combined, uncorrelated 2-channel W-CDMA waveforms (total four channels). This test signal provides equivalent reference (occupied bandwidth waveform EPF) actual performance with MMDS waveform.
AGR26180E Preliminary Product Brief 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET April 2004
Electrical Characteristics
Table Functional Tests Agere Systems Supplied Test Fixture*) Parameter Two-Tone Common-source Amplifier Power Gain (VDD Vdc, POUT PEP, 2550 2650 MHz, tone spacing kHz) Two-Tone Drain Efficiency (VDD Vdc, POUT PEP, 2550 2650 MHz, tone spacing kHz) Third-order Intermodulation Distortion* (VDD Vdc, POUT PEP, 2550 2650 MHz, tone spacing kHz) Input Return Loss (VDD Vdc, POUT PEP, 2550 2650 MHz, tone spacing kHz) Output Power Gain Compression (VDD POUT 2650 MHz, Ruggedness (VDD POUT 2650 MHz, VSWR 10:1 [all phase angles]) Symbol Unit
P1dB
degradation output power.
Tested center band 2600 Ghz, Agere production test fixture, recommended IDQ.
Agere Systems Inc.
Preliminary Product Brief AGR26180E April 2004 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
Package Dimensions
dimensions inches. Tolerances ±0.005 unless specified.
AGR26180EU
PINS: DRAIN DRAIN GATE GATE SOURCE
AGERE AGERE AGR26180XU AGR19K180U YYWWLL XXXXX XXXXX ZZZZZZZ ZZZZZZZ
AGR26180EF
PINS: DRAIN DRAIN GATE GATE SOURCE
AGERE AGERE AGR19K180U AGR26180XF XXXXX YYWWLL XXXXX ZZZZZZZ
Label Notes: before part number denotes model program. before part number denotes engineering prototype.
last letters part number denote wafer technology package type. YYWWLL date code including place manufacture: year year work week (YYWW), location Allentown, Thailand). XXXXX five-digit wafer number. ZZZZZZZ seven-digit assembly number production parts. ZZZZZZZZZZZZ 12-digit (five-digit lot, two-digit wafer, five-digit serial number) models engineering prototypes.
Agere Systems Inc.
AGR26180E Preliminary Product Brief 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET April 2004
Power Product Information
product application information, please visit website: http://www.agere.com/rfpower.
additional information, contact your Agere Systems Account Manager following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway Allentown, 18109-9138 1-800-372-2447, 610-712-4106 CANADA: 1-800-553-2448, 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 3210-12, 32/F, Tower Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, (852) 3129-2020 CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344
Agere Systems Inc. reserves right make changes product(s) information contained herein without notice. liability assumed result their application. Agere registered trademark Agere Systems Inc. Agere Systems Agere logo trademarks Agere Systems Inc.
Copyright 2004 Agere Systems Inc. Rights Reserved
April 2004 PB04-082RFPP (Replaces PB04-017RFPP)

AGR26180E high-voltage, gold-metalized, enhancement mode, laterally di

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