AGR19K180EF high-voltage, gold-metalized, laterally diffused oxide sem

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AGR19K180EF high-voltage, gold-metalized, laterally diffused oxide sem

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AGR19K180E 1.840 GHz-1.870 GHz, N-Channel E-Mode, Lateral MOSFET
AGR19K180EF high-voltage, gold-metalized, laterally diffused oxide semiconductor (LDMOS) power transistor suitable Korean (IS-95B N-CDMA [narrowband-code division multiple access] pilot) (1.840 GHz-1.870 GHz) single multicarrier class power amplifier applications. This device manufactured using advanced LDMOS technology offering state-of-the-art performance reliability.
Table Thermal Characteristics Parameter Thermal Resistance, Junction Case Value 0.35 Unit °C/W
Table Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current Continuous Total Dissipation Derate Above Operating Junction Temperature Storage Temperature Range VDSS TSTG Value -0.5, -65, Unit W/°C
375D-03, STYLE
Figure AGR19K180EF (flanged) Package
Stresses excess absolute maximum ratings cause permanent damage device. These absolute stress ratings only. Functional operation device implied these other conditions excess those given operational sections data sheet. Exposure absolute maximum ratings extended periods adversely affect device reliability.
Features
Table Rating* AGR19K180EF Minimum 1000 Class
Typical performance ratings nine carrier Korean systems with nine Walsh codes carrier, 1.25 carrier bandwidth (BW), adjacent channel ±750 kHz, alternate channel ±1.98 MHz. Typical ratio Output power: 21.4 Power gain: min. Efficiency: TBD. ACPR dBc. Spurious emissions: ±1.98 MHz: dBc. Return loss: High-reliability, gold-metalization process. carrier injection (HCI) induced bias drift over years. Internally matched. High gain, efficiency, linearity. Integrated protection. Device withstand 10:1 voltage standing wave ratio (VSWR) Vdc, 1.855 GHz, output power pulsed duty. Large signal impedance parameters available.
Although electrostatic discharge (ESD) protection circuitry been designed into this device, proper precautions must taken avoid exposure electrical overstress (EOS) during handling, assembly, test operations. Agere employs human-body model (HBM), machine model (MM), charged-device model (CDM) qualification requirement order determine ESD-susceptibility limits protection design evaluation. voltage thresholds dependent circuit parameters used each models, defined JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), JESD22-C101A (CDM) standards. Caution: devices susceptible damage from electrostatic charge. Reasonable precautions handling packaging devices should observed.
AGR19K180E Preliminary Product Brief 1.840 GHz-1.870 GHz, N-Channel E-Mode, Lateral MOSFET April 2004
Package Dimensions
dimensions inches. Tolerances ±0.005 unless specified.
PINS: DRAIN DRAIN GATE GATE SOURCE
AGERE AGERE AGR19K180U AGR19K180XF XXXXX YYWWLL XXXXX ZZZZZZZ ZZZZZZZ
Label Notes: before part number denotes model program. before part number denotes engineering prototype.
last letters part number denote wafer technology package type. YYWWLL date code including place manufacture: year year work week (YYWW), location Allentown, Thailand). XXXXX five-digit wafer number. ZZZZZZZ seven-digit assembly number production parts. ZZZZZZZZZZZZ 12-digit (five-digit lot, two-digit wafer, five-digit serial number) models engineering prototypes.
Agere Systems Inc.
AGR19K180E Preliminary Product Brief 1.840 GHz-1.870 GHz, N-Channel E-Mode, Lateral MOSFET April 2004
Power Product Information
product application information, please visit website: http://www.agere.com/rfpower.
additional information, contact your Agere Systems Account Manager following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway Allentown, 18109-9138 1-800-372-2447, 610-712-4106 CANADA: 1-800-553-2448, 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 3210-12, 32/F, Tower Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, (852) 3129-2020 CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344
Agere Systems Inc. reserves right make changes product(s) information contained herein without notice. liability assumed result their application. Agere registered trademark Agere Systems Inc. Agere Systems Agere logo trademarks Agere Systems Inc.
Copyright 2004 Agere Systems Inc. Rights Reserved
April 2004 PB04-079RFPP (Replaces PB04-068RFPP)

AGR19K180EF high-voltage, gold-metalized, laterally diffused oxide sem

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