AGR18125E N-channel goldmetallized, laterally diffused metal oxide sem

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AGR18125E N-channel goldmetallized, laterally diffused metal oxide sem

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AGR18125E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
AGR18125E N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) power field effect transistor (FET) suitable global system mobile communication (GSM), enhanced data global evolution (EDGE), multicarrier class power amplifier applications. This device manufactured using advanced LDMOS technology offering state-of-theart performance reliability. packaged industry-standard package capable delivering minimum output power which makes ideally suited today's power amplifier applications. Table Thermal Characteristics Parameter Thermal Resistance, Junction Case: AGR18125EU AGR18125EF Value Unit
°C/W °C/W
Table Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation AGR18125EU AGR18125EF Derate Above AGR18125EU AGR18125EF Operating Junction Temperature Storage Temperature Range Value Unit VDSS -0.5, W/°C W/°C
AGR18125EU (unflanged)
AGR18125EF (flanged)
TSTG -65,
Figure Available Packages
Features
Stresses excess absolute maximum ratings cause permanent damage device. These absolute stress ratings only. Functional operation device implied these other conditions excess those given operational sections data sheet. Exposure absolute maximum ratings extended periods adversely affect device reliability.
Typical performance ratings EDGE 1.840 GHz, POUT Modulation spectrum: dBc. dBc. Typical performance over entire digital communication system (DCS) band: P1dB: typical (typ). Power gain: P1dB 13.5 Efficiency: P1dB typ. Return loss: High-reliability, gold-metallization process. carrier injection (HCI) induced bias drift over years. Internally matched. High gain, efficiency, linearity. Integrated protection. minimum output power. Device withstand 10:1 voltage standing wave ratio (VSWR) Vdc, 1.840 GHz, continuous wave (CW) output power. Large signal impedance parameters available.
Table Rating* AGR18125E Minimum 1500 Class
Although electrostatic discharge (ESD) protection circuitry been designed into this device, proper precautions must taken avoid exposure electrical overstress (EOS) during handling, assembly, test operations. Agere employs human-body model (HBM), machine model (MM), charged-device model (CDM) qualification requirement order determine ESD-susceptibility limits protection design evaluation. voltage thresholds dependent circuit parameters used each models, defined JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), JESD22-C101A (CDM) standards. Caution: devices susceptible damage from electrostatic charge. Reasonable precautions handling packaging devices should observed.
AGR18125E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: Table Characteristics Parameter Characteristics Drain-source Breakdown Voltage (VGS Gate-source Leakage Current (VGS Zero Gate Voltage Drain Leakage Current (VDS Characteristics Forward Transconductance (VDS Gate Threshold Voltage (VDS Gate Quiescent Voltage (VDS 1200 Drain-source On-voltage (VGS Table Characteristics Parameter Drain-to-gate Capacitance (VDS MHz) Drain-to-source Capacitance (VDS MHz) Power Gain (VDS POUT 1200 Drain Efficiency (VDS POUT 1200 EDGE Linearity Characterization (POUT 1.840 GHz, 1200 Modulation spectrum Modulation spectrum Output Power (VDS gain compression, 1200 Input VSWR Ruggedness (VDS POUT 1200 VSWR 10:1 [all angles])
Across full band, 1.805 GHz-1.880 GHz.
Symbol V(BR)DSS IGSS IDSS VGS(TH) VGS(Q) VDS(ON)
0.08
Unit µAdc µAdc
Symbol Dynamic Characteristics CRSS COSS
Unit
Functional Tests* Agere Systems Supplied Test Fixture) 13.5
P1dB VSWRI
degradation output power.
Agere Systems Inc.
AGR18125E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Package Dimensions
dimensions inches. Tolerances ±0.005 unless specified.
AGR18125EU
PINS: DRAIN GATE SOURCE
AGERE AGERE M-AGR21125U AGR18125XU YYWWLL XXXXX YYWWUR ZZZZZZZ ZZZZZZZ
AGR18125EF
PINS: DRAIN GATE SOURCE
AGERE AGERE M-AGR21125F AGR18125XF YYWWLL XXXXX YYWWUR ZZZZZZZ ZZZZZZZ
Label Notes: before part number denotes model program. before part number denotes engineering prototype.
last letters part number denote wafer technology package type. YYWWLL date code including place manufacture: year year work week (YYWW), location Allentown, Thailand). XXXXX five-digit wafer number. ZZZZZZZ seven-digit assembly number production parts. ZZZZZZZZZZZZ 12-digit (five-digit lot, two-digit wafer, five-digit serial number) models engineering prototypes.
Agere Systems Inc.
AGR18125E 1.805 GHz-1.880 GHz, LDMOS Power Transistor
Power Product Information
product application information, please visit website: http://www.agere.com/rfpower.
additional information, contact your Agere Systems Account Manager following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway Allentown, 18109-9138 1-800-372-2447, 610-712-4106 CANADA: 1-800-553-2448, 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 3210-12, 32/F, Tower Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, (852) 3129-2020 CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344
Agere Systems Inc. reserves right make changes product(s) information contained herein without notice. liability assumed result their application. Agere registered trademark Agere Systems Inc. Agere Systems Agere logo trademarks Agere Systems Inc.
Copyright 2004 Agere Systems Inc. Rights Reserved
April 2004 PB04-078RFPP (Replaces PB04-012RFPP)

AGR18125E N-channel goldmetallized, laterally diffused metal oxide sem

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