AGR09045XUM high-voltage, gold-metalized, laterally diffused metal oxi

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AGR09045XUM high-voltage, gold-metalized, laterally diffused metal oxi

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AGR09045XUM MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045XUM high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) power transistor suitable cellular band, code-division multiple access (CDMA), global system mobile communication (GSM), enhanced data global evolution (EDGE), time-division multiple access (TDMA) single multicarrier class wireless base station amplifier applications. This device manufactured advanced LDMOS technology, offering state-of-the-art performance reliability. Available plastic overmold package capable delivering minimum output power ideally suited today's power amplifier applications. Table Thermal Characteristics Parameter Thermal Resistance, Junction Case: AGR09045XUM Value Unit
°C/W
Table Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current-Continuous Total Dissipation AGR09045XUM Derate Above AGR09045XUM Operating Junction Temperature Storage Temperature Range Value VDSS -0.5, 4.25 0.67 Unit W/°C
TSTG -65, +150
Stresses excess absolute maximum ratings cause permanent damage device. These absolute stress ratings only. Functional operation device implied these other conditions excess those given operational sections data sheet. Exposure absolute maximum ratings extended periods adversely affect device reliability.
AGR09045XUM
Table Rating* Figure Available Package AGR09045XUM Minimum 1500 Class
Features
Typical performance ratings IS-95 CDMA, pilot, sync, paging, traffic codes 8-13: Output power (POUT): Power gain: Efficiency: 27%. Adjacent channel power ratio (ACPR) bandwidth (BW): (750 offset: dBc) (1.98 offset: dBc). Input return loss: High-reliability, gold-metalization process. Best-in-class thermal resistance. High gain, efficiency, linearity. Integrated protection. LDMOS. Industry-standard packages. minimum output power.
Although electrostatic discharge (ESD) protection circuitry been designed into this device, proper precautions must taken avoid exposure electrical overstress (EOS) during handling, assembly, test operations. Agere employs human-body model (HBM), machine model (MM), charged-device model (CDM) qualification requirement order determine ESD-susceptibility limits protection design evaluation. voltage thresholds dependent circuit parameters used each models, defined JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), JESD22-C101A (CDM) standards. Caution: devices susceptible damage from electrostatic charge. Reasonable precautions handling packaging devices should observed.
AGR09045XUM MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
AGR09045XUM Package Dimensions
Controlling dimensions millimeters.
(0.043) PLACES 0.65 (0.03) 0.315 (0.013) 0.315 (0.013) 1.00 (0.039)
DRAIN
16.00 11.00 11.30 (0.630) (0.433 0.448 MAX) 1.27 (0.0495)
AGERE AGR09045XUM YYWWL XXXXX ZZZZZZZZ
GATE
2.90 (0.114) PLACES
SOURCE
2.95 6.00 0.20 (0.115) (0.234 0.0078)
2.50 (0.098) 11.35 (0.448) 11.00 (0.434 0.078)
0.61 0.61 (0.025 0.025)
2.24 (0.088)
VIEW
BOTTOM VIEW
15.90 16.20 (0.626 0.6378 MAX)
0.254 (0.099)
2.95 (0.115) 3.15 0.15 (0.123 0.006) 0.015 (0.0006)
3.35 (0.131)
0.90 (0.036)
1.60 (0.063)
SIDE VIEW
VIEW
millimeters Note: Dimensions shown inches Label Notes: before part number denotes model program. before part number denotes engineering prototype.
last three letters part number denote wafer technology, flange type, packaging technology. YYWWL date code including place manufacture: year year work week (YYWW), location Phillipines). XXXXX five-digit wafer number. ZZZZZZZZ Assembly number.
Agere Systems Inc.
AGR09045XUM MHz-895 MHz, N-Channel E-Mode, Lateral MOSFET
Power Product Information
product application information, please visit website: http://www.agere.com/rfpower.
additional information, contact your Agere Systems Account Manager following: INTERNET: http://www.agere.com E-MAIL: docmaster@agere.com AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway Allentown, 18109-9138 1-800-372-2447, 610-712-4106 CANADA: 1-800-553-2448, 610-712-4106) ASIA: Agere Systems Hong Kong Ltd., Suites 3201 3210-12, 32/F, Tower Gateway, Harbour City, Kowloon Tel. (852) 3129-2000, (852) 3129-2020 CHINA: (86) 21-54614688 (Shanghai), (86) 755-25881122 (Shenzhen) JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6778-8833, TAIWAN: (886) 2-2725-5858 (Taipei) EUROPE: Tel. (44) 1344
Agere Systems Inc. reserves right make changes product(s) information contained herein without notice. liability assumed result their application. Agere registered trademark Agere Systems Inc. Agere Systems Agere logo trademarks Agere Systems Inc.
Copyright 2004 Agere Systems Inc. Rights Reserved
March 2004 PB04-070RFPP (Replaces PB04-062RFPP)

AGR09045XUM high-voltage, gold-metalized, laterally diffused metal oxi

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