CMOS Quad Exclusive Exclusive Gates Pinouts Features Hi
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CD4070BMS CD4077BMS
CMOS Quad Exclusive Exclusive Gates
Pinouts
Features
High Voltage Types (20V Rating) CD4070BMS Quad Exclusive Gate CD4077BMS Quad Exclusive Gate Medium Speed Operation tPHL, tPLH 65ns (Typ.) 10V, 50pF Parametric Ratings Standardized, Symmetrical Output Characteristics 100% Tested Quiescent Current Maximum Input Current Over Full Package Temperature Range; 100nA +25oC Noise Margin (Over Full Package/Temperature Range) 2.5V Meets Requirements JEDEC Tentative Standard 13B, "Standard Specifications Description Series CMOS Devices"
CD4070BMS VIEW
CD4077BMS VIEW
Applications
Logical Comparators Parity Generators Checkers Adders/Subtractors
Functional Diagram
Description
CD4070BMS contains four independent Exclusive gates. CD4077BMS contains four independent Exclusive gates. CD4070BMS CD4077BMS provide system designer with means direct implementation Exclusive Exclusive functions, respectively. CD4070BMS CD4077BMS supplied these lead outline packages: Braze Seal Frit Seal Ceramic Flatpack *CD4070B Only *H4F
CD4070BMS
CD4077B Only
CD4077BMS
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. 1-888-INTERSIL 321-724-7143 Copyright Intersil Corporation 1999
File Number
3322
7-455
Specifications CD4070BMS, CD4077BMS
Absolute Maximum Ratings
Supply Voltage Range, (VDD) -0.5V +20V (Voltage Referenced Terminals) Input Voltage Range, Inputs .-0.5V +0.5V Input Current, Input .±10mA Operating Temperature Range -55oC +125oC Package Types Storage Temperature Range (TSTG) -65oC +150oC Lead Temperature (During Soldering) +265oC Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case Maximum
Reliability Information
Thermal Resistance Ceramic FRIT Package 80oC/W 20oC/W Flatpack Package 70oC/W 20oC/W Maximum Package Power Dissipation (PD) +125 -55oC +100oC (Package Type 500mW +100oC +125oC (Package Type Derate Linearity 12mW/oC 200mW Device Dissipation Output Transistor 100mW Full Package Temperature Range (All Package Types) Junction Temperature +175oC
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS 18V, Input Leakage Current Input Leakage Current Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Threshold Voltage Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH 15V, Load 15V, Load (Note VOUT 0.4V 10V, VOUT 0.5V 15V, VOUT 1.5V VOUT 4.6V VOUT 2.5V 10V, VOUT 9.5V 15V, VOUT 13.5V 10V, -10µA 10µA 2.8V, 20V, 18V, Input Voltage (Note Input Voltage High (Note Input Voltage (Note Input Voltage High (Note 4.5V, 0.5V 4.5V, 0.5V 15V, 13.5V, 1.5V 15V, 13.5V, 1.5V LIMITS TEMPERATURE
PARAMETER Supply Current
SYMBOL
CONDITIONS (NOTE 20V,
-100 -1000 -100
1000 -0.53 -1.8 -1.4 -3.5 -0.7
UNITS
+125oC -55oC +25o
+125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC
+25oC, +125oC, -55oC 14.95 +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 0.53 -2.8
VDD/2 VDD/2
NOTES: voltages referenced device GND, 100% testing being implemented. Go/No test with limits applied inputs.
accuracy, voltage measured differentially VDD. Limit 0.050V max.
7-456
Specifications CD4070BMS, CD4077BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP SUBGROUPS TEMPERATURE +25oC +125oC, -55oC LIMITS UNITS
PARAMETER Propagation Delay
SYMBOL TPHL TPLH TTHL TTLH
CONDITIONS (NOTES
Transition Time
+25oC +125oC, -55oC
NOTES: 50pF, 200K, Input 20ns. -55oC +125oC limits guaranteed, 100% testing being implemented.
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL CONDITIONS NOTES TEMPERATURE -55oC, +25oC +125oC 10V, -55oC, +25oC 4.95 9.95 0.36 0.64 -0.36 -0.64 -1.15 -2.0 -0.9 -2.6 -2.4 -4.2 UNITS
+125oC 15V, -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) IOL5 Load 10V, Load Load 10V, Load VOUT 0.4V +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 10V, VOUT 0.5V +125oC -55oC Output Current (Sink) IOL15 15V, VOUT 1.5V +125oC -55oC Output Current (Source) IOH5A VOUT 4.6V +125oC -55oC Output Current (Source) IOH5B VOUT 2.5V +125oC -55oC Output Current (Source) IOH10 10V, VOUT 9.5V +125oC -55oC Output Current (Source) IOH15 =15V, VOUT 13.5V +125oC -55oC Input Voltage Input Voltage High 10V, 10V, +25oC, +125oC, -55oC +25oC, +125oC, -55oC
7-457
Specifications CD4070BMS, CD4077BMS
TABLE ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Propagation Delay SYMBOL TPHL TPLH TTHL TTLH CONDITIONS Input NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC UNITS
Transition Time
Input Capacitance NOTES:
voltages referenced device GND. parameters listed Table controlled design process directly tested. These parameters characterized initial design release upon design changes which would affect these characteristics. 50pF, 200K, Input 20ns.
TABLE POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current Threshold Voltage Threshold Voltage Delta Threshold Voltage Threshold Voltage Delta Functional SYMBOL VNTH CONDITIONS 20V, 10V, -10µA 10V, -10µA 10µA 10µA 18V, Propagation Delay Time TPHL TPLH +25oC NOTES TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC -2.8 VDD/2 -0.2 VDD/2 1.35 +25oC Limit UNITS
NOTES: voltages referenced device GND. 50pF, 200K, Input 20ns.
Table +25oC limit. Read Record
TABLE BURN-IN LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IOL5 IOH5A 0.2µA Pre-Test Reading Pre-Test Reading DELTA LIMIT
TABLE APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test (Post Burn-In) Interim Test (Post Burn-In) (Note Interim Test (Post Burn-In) MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 GROUP SUBGROUPS Deltas IDD, IOL5, IOH5A READ RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A
7-458
Specifications CD4070BMS, CD4077BMS
TABLE APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP (Note Final Test Group Group Subgroup Subgroup Group MIL-STD-883 METHOD 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP SUBGROUPS Deltas Deltas Subgroups Subgroups READ RECORD
NOTE: Parameteric, Functional; Cumulative Static
TABLE TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD POST-IRRAD Table READ RECORD PRE-IRRAD POST-IRRAD Table
CONFORMANCE GROUPS Group Subgroup
TABLE BURN-IN IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In Note Static Burn-In Note Dynamic BurnIn Note Irradiation Note NOTE: Each except will have series resistor 0.5V Each except will have series resistor Group Subgroup sample size dice/wafer, failures, 0.5V OPEN GROUND 5-9, 12-14 12-14 -0.5V 50kHz 25kHz
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries. information regarding Intersil Corporation products, site http://www.intersil.com
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CD4070BMS, CD4077BMS Schematics
TRUTH TABLE CD4070BMS GATES
High Level Level
INPUTS PROTECTED CMOS PROTECTION NETWORK
FIGURE SCHEMATIC DIAGRAM CD4070BMS IDENTICAL GATES)
TRUTH TABLE CD4077BMS GATES
High Level Level
INPUTS PROTECTED CMOS PROTECTION NETWORK
FIGURE SCHEMATIC DIAGRAM CD4077BMS IDENTICAL GATES)
7-460
CD4070BMS, CD4077BMS Typical Performance Characteristics
OUTPUT (SINK) CURRENT (IOL) (mA) OUTPUT (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) +25oC AMBIENT TEMPERATURE (TA) +25oC
GATE-TO-SOURCE VOLTAGE (VGS)
15.0 GATE-TO-SOURCE VOLTAGE (VGS) 12.5 10.0
DRAIN-TO-SOURCE VOLTAGE (VDS)
DRAIN-TO-SOURCE VOLTAGE (VDS)
FIGURE TYPICAL OUTPUT (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
FIGURE MINIMUM OUTPUT (SINK) CURRENT CHARACTERISTICS
DRAIN-TO-SOURCE VOLTAGE (VDS) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) AMBIENT TEMPERATURE (TA) +25oC GATE-TO-SOURCE VOLTAGE (VGS)
OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA)
-10V
-10V
-15V
-15V
FIGURE TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
AMBIENT TEMPERATURE (TA) +25oC TRANSITION TIME (tTHL, tTLH) (ns)
FIGURE MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS
PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) +25oC
SUPPLY VOLTAGE (VDD)
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE (CL) (pF)
LOAD CAPACITANCE (CL) (pF)
FIGURE TYPICAL TRANSITION TIME FUNCTION LOAD CAPACITANCE
FIGURE TYPICAL PROPAGATION DELAY TIME FUNCTION LOAD CAPACITANCE
7-461
CD4070BMS, CD4077BMS Typical Performance Characteristics
PROPAGATION DELAY TIME (tPHL, tPLH) (ns) AMBIENT TEMPERATURE (TA) +25oC LOAD CAPACITANCE (CL) 50pF
(Continued)
POWER DISSIPATION GATE (PD) (µW)
AMBIENT TEMPERATURE (TA) +25oC
SUPPLY VOLTAGE (VDD)
LOAD CAPACITANCE 50pF 15pF
10-1
SUPPLY VOLTAGE (VDD)
10-1
INPUT FREQUENCY (fI) (kHz)
FIGURE TYPICAL PROPAGATION DELAY TIME FUNCTION SUPPLY VOLTAGE
FIGURE TYPICAL DYNAMIC POWER DISSIPATION FUNCTION INPUT FREQUENCY
Chip Dimensions Layout
CD4077BMSH
Dimensions layout CD4070BMSH identical Dimensions parenthesis millimeters derived from basic inch dimensions indicated. Grid graduations mils (10-3 inch).
METALLIZATION: PASSIVATION:
Thickness:
Silane
BOND PADS: 0.004 inches 0.004 inches THICKNESS: 0.0198 inches 0.0218 inches
7-462
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